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Hot-electron photocurrent detection of near-infrared light based on ZnO

Yaonan Hou, H. Liang, A. Tang Orcid Logo, X. Du, Z. Mei

Applied Physics Letters, Volume: 118, Issue: 6

Swansea University Author: Yaonan Hou

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DOI (Published version): 10.1063/5.0031719

Abstract

We demonstrate an unconventional near-infrared photodetector fabricated from a ZnO chip with a metallic subwavelength grating structure as a contact and optical window, which harvests hot electrons generated by plasmonic resonances introduced by incident light. The grating structure has a strong sel...

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Published in: Applied Physics Letters
ISSN: 0003-6951 1077-3118
Published: AIP Publishing 2021
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URI: https://cronfa.swan.ac.uk/Record/cronfa65285
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fullrecord <?xml version="1.0" encoding="utf-8"?><rfc1807 xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:xsd="http://www.w3.org/2001/XMLSchema"><bib-version>v2</bib-version><id>65285</id><entry>2023-12-14</entry><title>Hot-electron photocurrent detection of near-infrared light based on ZnO</title><swanseaauthors><author><sid>113975f710084997abdb26ad5fa03e8e</sid><firstname>Yaonan</firstname><surname>Hou</surname><name>Yaonan Hou</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2023-12-14</date><deptcode>EEEG</deptcode><abstract>We demonstrate an unconventional near-infrared photodetector fabricated from a ZnO chip with a metallic subwavelength grating structure as a contact and optical window, which harvests hot electrons generated by plasmonic resonances introduced by incident light. The grating structure has a strong selection of the polarization of incident light, meaning that the detector is naturally polarization-sensitive. In our device, the polarization extinction ratio is as high as 64:1, much higher than that relying on crystal orientations. Since the photoresponse is introduced by plasmonic resonance, a narrow photoresponse spectrum with a linewidth of 32.1 nm at 1.201 μm is obtained. By simply changing the grating period, the spectral position can be tailored freely within the near-infrared region, i.e., wavelength-selective. Such a spectral response is not likely to be realized with conventional semiconductor photodetectors, which depend on the band edge absorption. We propose a modified Fowler's model, which well explains the line shape of photoresponse spectra of such devices.</abstract><type>Journal Article</type><journal>Applied Physics Letters</journal><volume>118</volume><journalNumber>6</journalNumber><paginationStart/><paginationEnd/><publisher>AIP Publishing</publisher><placeOfPublication/><isbnPrint/><isbnElectronic/><issnPrint>0003-6951</issnPrint><issnElectronic>1077-3118</issnElectronic><keywords/><publishedDay>8</publishedDay><publishedMonth>2</publishedMonth><publishedYear>2021</publishedYear><publishedDate>2021-02-08</publishedDate><doi>10.1063/5.0031719</doi><url/><notes/><college>COLLEGE NANME</college><department>Electronic and Electrical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEEG</DepartmentCode><institution>Swansea University</institution><apcterm/><funders/><projectreference/><lastEdited>2024-04-10T14:37:48.2654271</lastEdited><Created>2023-12-14T16:00:52.3397893</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering</level></path><authors><author><firstname>Yaonan</firstname><surname>Hou</surname><order>1</order></author><author><firstname>H.</firstname><surname>Liang</surname><order>2</order></author><author><firstname>A.</firstname><surname>Tang</surname><orcid>0000-0002-2911-2845</orcid><order>3</order></author><author><firstname>X.</firstname><surname>Du</surname><order>4</order></author><author><firstname>Z.</firstname><surname>Mei</surname><order>5</order></author></authors><documents/><OutputDurs/></rfc1807>
spelling v2 65285 2023-12-14 Hot-electron photocurrent detection of near-infrared light based on ZnO 113975f710084997abdb26ad5fa03e8e Yaonan Hou Yaonan Hou true false 2023-12-14 EEEG We demonstrate an unconventional near-infrared photodetector fabricated from a ZnO chip with a metallic subwavelength grating structure as a contact and optical window, which harvests hot electrons generated by plasmonic resonances introduced by incident light. The grating structure has a strong selection of the polarization of incident light, meaning that the detector is naturally polarization-sensitive. In our device, the polarization extinction ratio is as high as 64:1, much higher than that relying on crystal orientations. Since the photoresponse is introduced by plasmonic resonance, a narrow photoresponse spectrum with a linewidth of 32.1 nm at 1.201 μm is obtained. By simply changing the grating period, the spectral position can be tailored freely within the near-infrared region, i.e., wavelength-selective. Such a spectral response is not likely to be realized with conventional semiconductor photodetectors, which depend on the band edge absorption. We propose a modified Fowler's model, which well explains the line shape of photoresponse spectra of such devices. Journal Article Applied Physics Letters 118 6 AIP Publishing 0003-6951 1077-3118 8 2 2021 2021-02-08 10.1063/5.0031719 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2024-04-10T14:37:48.2654271 2023-12-14T16:00:52.3397893 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Yaonan Hou 1 H. Liang 2 A. Tang 0000-0002-2911-2845 3 X. Du 4 Z. Mei 5
title Hot-electron photocurrent detection of near-infrared light based on ZnO
spellingShingle Hot-electron photocurrent detection of near-infrared light based on ZnO
Yaonan Hou
title_short Hot-electron photocurrent detection of near-infrared light based on ZnO
title_full Hot-electron photocurrent detection of near-infrared light based on ZnO
title_fullStr Hot-electron photocurrent detection of near-infrared light based on ZnO
title_full_unstemmed Hot-electron photocurrent detection of near-infrared light based on ZnO
title_sort Hot-electron photocurrent detection of near-infrared light based on ZnO
author_id_str_mv 113975f710084997abdb26ad5fa03e8e
author_id_fullname_str_mv 113975f710084997abdb26ad5fa03e8e_***_Yaonan Hou
author Yaonan Hou
author2 Yaonan Hou
H. Liang
A. Tang
X. Du
Z. Mei
format Journal article
container_title Applied Physics Letters
container_volume 118
container_issue 6
publishDate 2021
institution Swansea University
issn 0003-6951
1077-3118
doi_str_mv 10.1063/5.0031719
publisher AIP Publishing
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
description We demonstrate an unconventional near-infrared photodetector fabricated from a ZnO chip with a metallic subwavelength grating structure as a contact and optical window, which harvests hot electrons generated by plasmonic resonances introduced by incident light. The grating structure has a strong selection of the polarization of incident light, meaning that the detector is naturally polarization-sensitive. In our device, the polarization extinction ratio is as high as 64:1, much higher than that relying on crystal orientations. Since the photoresponse is introduced by plasmonic resonance, a narrow photoresponse spectrum with a linewidth of 32.1 nm at 1.201 μm is obtained. By simply changing the grating period, the spectral position can be tailored freely within the near-infrared region, i.e., wavelength-selective. Such a spectral response is not likely to be realized with conventional semiconductor photodetectors, which depend on the band edge absorption. We propose a modified Fowler's model, which well explains the line shape of photoresponse spectra of such devices.
published_date 2021-02-08T14:37:45Z
_version_ 1795955113369534464
score 11.03559