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Porosity-enhanced solar powered hydrogen generation in GaN photoelectrodes
Applied Physics Letters, Volume: 111, Issue: 20
Swansea University Author: Yaonan Hou
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DOI (Published version): 10.1063/1.5001938
Abstract
Two types of GaN based photoelectrodes using either horizontally aligned or vertically aligned nanopores have been fabricated by means of using an electrochemical etching approach. The photoelectrodes based on such nanostructures have demonstrated an up to 5-fold enhancement in applied bias photon-t...
Published in: | Applied Physics Letters |
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ISSN: | 0003-6951 1077-3118 |
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AIP Publishing
2017
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URI: | https://cronfa.swan.ac.uk/Record/cronfa65302 |
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v2 65302 2023-12-14 Porosity-enhanced solar powered hydrogen generation in GaN photoelectrodes 113975f710084997abdb26ad5fa03e8e Yaonan Hou Yaonan Hou true false 2023-12-14 EEEG Two types of GaN based photoelectrodes using either horizontally aligned or vertically aligned nanopores have been fabricated by means of using an electrochemical etching approach. The photoelectrodes based on such nanostructures have demonstrated an up to 5-fold enhancement in applied bias photon-to-current efficiency and incident photon-to-current efficiency in comparison with their planar counterpart, leading to a high Faradaic conversion efficiency which approaches 1. The GaN photoelectrodes with these nanopores also show excellent chemical stability in HBr solution as an electrolyte. The results presented reveal that the gas diffusion in the nanopores plays an important role in water splitting processes, which should be taken into account when designing a GaN photoelectrode with a nanopore structure. Journal Article Applied Physics Letters 111 20 AIP Publishing 0003-6951 1077-3118 14 11 2017 2017-11-14 10.1063/1.5001938 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University Another institution paid the OA fee This work was supported by the UK Engineering and Physical Sciences Research Council (EPSRC) via Grant Nos. EP/M015181/1 and EP/L017024/1. 2024-04-09T13:24:01.6941543 2023-12-14T16:26:07.5716871 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Yaonan Hou 1 Z. Ahmed Syed 0000-0002-4233-9753 2 L. Jiu 3 J. Bai 4 T. Wang 5 65302__29959__d5d98bc72cad401aaf42bf76f0a8c737.pdf 65302.VOR.pdf 2024-04-09T13:22:42.3964688 Output 1468007 application/pdf Version of Record true Copyright 2017 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license. true eng http://creativecommons.org/licenses/by/4.0/ |
title |
Porosity-enhanced solar powered hydrogen generation in GaN photoelectrodes |
spellingShingle |
Porosity-enhanced solar powered hydrogen generation in GaN photoelectrodes Yaonan Hou |
title_short |
Porosity-enhanced solar powered hydrogen generation in GaN photoelectrodes |
title_full |
Porosity-enhanced solar powered hydrogen generation in GaN photoelectrodes |
title_fullStr |
Porosity-enhanced solar powered hydrogen generation in GaN photoelectrodes |
title_full_unstemmed |
Porosity-enhanced solar powered hydrogen generation in GaN photoelectrodes |
title_sort |
Porosity-enhanced solar powered hydrogen generation in GaN photoelectrodes |
author_id_str_mv |
113975f710084997abdb26ad5fa03e8e |
author_id_fullname_str_mv |
113975f710084997abdb26ad5fa03e8e_***_Yaonan Hou |
author |
Yaonan Hou |
author2 |
Yaonan Hou Z. Ahmed Syed L. Jiu J. Bai T. Wang |
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Journal article |
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Applied Physics Letters |
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111 |
container_issue |
20 |
publishDate |
2017 |
institution |
Swansea University |
issn |
0003-6951 1077-3118 |
doi_str_mv |
10.1063/1.5001938 |
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AIP Publishing |
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Faculty of Science and Engineering |
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Faculty of Science and Engineering |
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Faculty of Science and Engineering |
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School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering |
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description |
Two types of GaN based photoelectrodes using either horizontally aligned or vertically aligned nanopores have been fabricated by means of using an electrochemical etching approach. The photoelectrodes based on such nanostructures have demonstrated an up to 5-fold enhancement in applied bias photon-to-current efficiency and incident photon-to-current efficiency in comparison with their planar counterpart, leading to a high Faradaic conversion efficiency which approaches 1. The GaN photoelectrodes with these nanopores also show excellent chemical stability in HBr solution as an electrolyte. The results presented reveal that the gas diffusion in the nanopores plays an important role in water splitting processes, which should be taken into account when designing a GaN photoelectrode with a nanopore structure. |
published_date |
2017-11-14T13:23:58Z |
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1795859875057631232 |
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11.021648 |