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GaN nano-pyramid arrays as an efficient photoelectrode for solar water splitting

Yaonan Hou, X Yu, Z Ahmed Syed, S Shen, J Bai, T Wang

Nanotechnology, Volume: 27, Issue: 45, Start page: 455401

Swansea University Author: Yaonan Hou

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Abstract

A prototype photoelectrode has been fabricated using a GaN nano-pyramid array structure grown on a cost-effective Si (111) substrate, demonstrating a significant improvement in performance of solar-powered water splitting compared with any planar GaN photoelectrode. Such a nano-pyramid structure lea...

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Published in: Nanotechnology
ISSN: 0957-4484 1361-6528
Published: IOP Publishing 2016
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URI: https://cronfa.swan.ac.uk/Record/cronfa65305
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spelling v2 65305 2023-12-14 GaN nano-pyramid arrays as an efficient photoelectrode for solar water splitting 113975f710084997abdb26ad5fa03e8e Yaonan Hou Yaonan Hou true false 2023-12-14 EEEG A prototype photoelectrode has been fabricated using a GaN nano-pyramid array structure grown on a cost-effective Si (111) substrate, demonstrating a significant improvement in performance of solar-powered water splitting compared with any planar GaN photoelectrode. Such a nano-pyramid structure leads to enhanced optical absorption as a result of a multi-scattering process which can effectively produce a reduction in reflectance. A simulation based on a finite-difference time-domain approach indicates that the nano-pyramid architecture enables incident light to be concentrated within the nano-pyramids as a result of micro-cavity effects, further enhancing optical absorption. Furthermore, the shape of the nano-pyramid further facilitates the photo-generated carrier transportation by enhancing a hole-transfer efficiency. All these features as a result of the nano-pyramid configuration lead to a large photocurrent of 1 mA cm−2 under an illumination density of 200 mW cm−2, with a peak incident photon-to-current conversion efficiency of 46.5% at ∼365 nm, around the band edge emission wavelength of GaN. The results presented are expected to pave the way for the fabrication of GaN based photoelectrodes with a high energy conversion efficiency of solar powered water splitting. Journal Article Nanotechnology 27 45 455401 IOP Publishing 0957-4484 1361-6528 photoelectrode, water splitting, hydrogen generation, GaN 11 10 2016 2016-10-11 10.1088/0957-4484/27/45/455401 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University This work was supported by the UK Engineering and Physical Sciences Research Council (EPSRC). 2024-04-09T12:41:10.4506713 2023-12-14T16:31:44.3092934 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Yaonan Hou 1 X Yu 2 Z Ahmed Syed 3 S Shen 4 J Bai 5 T Wang 6 65305__29957__96af7ba38f8d422d9f20f7b6ea7f06f9.pdf 65305.VOR.pdf 2024-04-09T12:39:26.9865670 Output 1764374 application/pdf Version of Record true Released under the terms of the Creative Commons Attribution 3.0 licence. true eng http://creativecommons.org/licenses/by/3.0
title GaN nano-pyramid arrays as an efficient photoelectrode for solar water splitting
spellingShingle GaN nano-pyramid arrays as an efficient photoelectrode for solar water splitting
Yaonan Hou
title_short GaN nano-pyramid arrays as an efficient photoelectrode for solar water splitting
title_full GaN nano-pyramid arrays as an efficient photoelectrode for solar water splitting
title_fullStr GaN nano-pyramid arrays as an efficient photoelectrode for solar water splitting
title_full_unstemmed GaN nano-pyramid arrays as an efficient photoelectrode for solar water splitting
title_sort GaN nano-pyramid arrays as an efficient photoelectrode for solar water splitting
author_id_str_mv 113975f710084997abdb26ad5fa03e8e
author_id_fullname_str_mv 113975f710084997abdb26ad5fa03e8e_***_Yaonan Hou
author Yaonan Hou
author2 Yaonan Hou
X Yu
Z Ahmed Syed
S Shen
J Bai
T Wang
format Journal article
container_title Nanotechnology
container_volume 27
container_issue 45
container_start_page 455401
publishDate 2016
institution Swansea University
issn 0957-4484
1361-6528
doi_str_mv 10.1088/0957-4484/27/45/455401
publisher IOP Publishing
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description A prototype photoelectrode has been fabricated using a GaN nano-pyramid array structure grown on a cost-effective Si (111) substrate, demonstrating a significant improvement in performance of solar-powered water splitting compared with any planar GaN photoelectrode. Such a nano-pyramid structure leads to enhanced optical absorption as a result of a multi-scattering process which can effectively produce a reduction in reflectance. A simulation based on a finite-difference time-domain approach indicates that the nano-pyramid architecture enables incident light to be concentrated within the nano-pyramids as a result of micro-cavity effects, further enhancing optical absorption. Furthermore, the shape of the nano-pyramid further facilitates the photo-generated carrier transportation by enhancing a hole-transfer efficiency. All these features as a result of the nano-pyramid configuration lead to a large photocurrent of 1 mA cm−2 under an illumination density of 200 mW cm−2, with a peak incident photon-to-current conversion efficiency of 46.5% at ∼365 nm, around the band edge emission wavelength of GaN. The results presented are expected to pave the way for the fabrication of GaN based photoelectrodes with a high energy conversion efficiency of solar powered water splitting.
published_date 2016-10-11T12:41:07Z
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