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Enhancement-mode ZnO/Mg<sub>0.5</sub>Zn<sub>0.5</sub>O HFET on Si

Daqian Ye, Zengxia Mei, Huili Liang, Junqiang Li, Yaonan Hou Orcid Logo, Changzhi Gu, Alexander Azarov, Andrej Kuznetsov, Wen-Chiang Hong, Yicheng Lu, Xiaolong Du

Journal of Physics D: Applied Physics, Volume: 47, Issue: 25, Start page: 255101

Swansea University Author: Yaonan Hou Orcid Logo

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DOI (Published version): 10.1088/0022-3727/47/25/255101

Published in: Journal of Physics D: Applied Physics
ISSN: 0022-3727 1361-6463
Published: IOP Publishing 2014
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URI: https://cronfa.swan.ac.uk/Record/cronfa65318
first_indexed 2024-04-10T14:12:25Z
last_indexed 2024-11-25T14:15:49Z
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spelling 2024-04-10T15:12:29.4356010 v2 65318 2023-12-14 Enhancement-mode ZnO/Mg<sub>0.5</sub>Zn<sub>0.5</sub>O HFET on Si 113975f710084997abdb26ad5fa03e8e 0000-0001-9461-3841 Yaonan Hou Yaonan Hou true false 2023-12-14 ACEM Journal Article Journal of Physics D: Applied Physics 47 25 255101 IOP Publishing 0022-3727 1361-6463 25 6 2014 2014-06-25 10.1088/0022-3727/47/25/255101 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University 2024-04-10T15:12:29.4356010 2023-12-14T16:44:01.0645371 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Daqian Ye 1 Zengxia Mei 2 Huili Liang 3 Junqiang Li 4 Yaonan Hou 0000-0001-9461-3841 5 Changzhi Gu 6 Alexander Azarov 7 Andrej Kuznetsov 8 Wen-Chiang Hong 9 Yicheng Lu 10 Xiaolong Du 11
title Enhancement-mode ZnO/Mg<sub>0.5</sub>Zn<sub>0.5</sub>O HFET on Si
spellingShingle Enhancement-mode ZnO/Mg<sub>0.5</sub>Zn<sub>0.5</sub>O HFET on Si
Yaonan Hou
title_short Enhancement-mode ZnO/Mg<sub>0.5</sub>Zn<sub>0.5</sub>O HFET on Si
title_full Enhancement-mode ZnO/Mg<sub>0.5</sub>Zn<sub>0.5</sub>O HFET on Si
title_fullStr Enhancement-mode ZnO/Mg<sub>0.5</sub>Zn<sub>0.5</sub>O HFET on Si
title_full_unstemmed Enhancement-mode ZnO/Mg<sub>0.5</sub>Zn<sub>0.5</sub>O HFET on Si
title_sort Enhancement-mode ZnO/Mg<sub>0.5</sub>Zn<sub>0.5</sub>O HFET on Si
author_id_str_mv 113975f710084997abdb26ad5fa03e8e
author_id_fullname_str_mv 113975f710084997abdb26ad5fa03e8e_***_Yaonan Hou
author Yaonan Hou
author2 Daqian Ye
Zengxia Mei
Huili Liang
Junqiang Li
Yaonan Hou
Changzhi Gu
Alexander Azarov
Andrej Kuznetsov
Wen-Chiang Hong
Yicheng Lu
Xiaolong Du
format Journal article
container_title Journal of Physics D: Applied Physics
container_volume 47
container_issue 25
container_start_page 255101
publishDate 2014
institution Swansea University
issn 0022-3727
1361-6463
doi_str_mv 10.1088/0022-3727/47/25/255101
publisher IOP Publishing
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
published_date 2014-06-25T11:36:39Z
_version_ 1850849257866657792
score 11.088929

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