MONAGHAN, F., Muniz, A. M., Fisher, C., & Jennings, M. (2023). Impact of Dimensions and Doping on the Breakdown Voltage of a Trench 4H-SiC Vertical JFET. Key Engineering Materials, 948, pp. 69-75. doi:10.4028/p-e6c13m
Chicago Style CitationMONAGHAN, FINNIAN, Antonio Martinez Muniz, Craig Fisher, and Mike Jennings. "Impact of Dimensions and Doping On the Breakdown Voltage of a Trench 4H-SiC Vertical JFET." Key Engineering Materials 948 (2023): 69-75.
MLA CitationMONAGHAN, FINNIAN, Antonio Martinez Muniz, Craig Fisher, and Mike Jennings. "Impact of Dimensions and Doping On the Breakdown Voltage of a Trench 4H-SiC Vertical JFET." Key Engineering Materials 948 (2023): 69-75.
Warning: These citations may not always be 100% accurate.