Impact of Dimensions and Doping on the Breakdown Voltage of a Trench 4H-SiC Vertical JFET

Date first appeared online	06/06/2023
DOI	10.4028/p-e6c13m
Authors	MONAGHAN F., Martinez Muniz A., Fisher C., Jennings M.
Journal Name	Key Engineering Materials
Volume	948

Documents

• 66248.VoR.pdf , Book, This article is an open access article under the terms and conditions of the Creative Commons Attribution (CC BY) license.