Impact of Dimensions and Doping on the Breakdown Voltage of a Trench 4H-SiC Vertical JFET

MONAGHAN, FINNIAN; Muniz, Antonio Martinez; Fisher, Craig; Jennings, Mike

doi:10.4028/p-e6c13m

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Impact of Dimensions and Doping on the Breakdown Voltage of a Trench 4H-SiC Vertical JFET

FINNIAN MONAGHAN, Antonio Martinez Muniz

, Craig Fisher, Mike Jennings

Key Engineering Materials, Volume: 948, Pages: 69 - 75

Swansea University Authors: FINNIAN MONAGHAN, Antonio Martinez Muniz , Craig Fisher, Mike Jennings

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DOI (Published version): 10.4028/p-e6c13m

Abstract

In this paper we study the feasibility of the design/fabrication of a vertical trench 4H-SiCJunction Field Effect Transistor (JFET), assuming realistic constraints of the depth of the P+implantation. The P+ doping profile is obtained using a Monte Carlo implantation simulation. Thecalculation used a...

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Published in:	Key Engineering Materials
ISSN:	1662-9795
Published:	Trans Tech Publications, Ltd. 2023
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URI:	https://cronfa.swan.ac.uk/Record/cronfa66248
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spelling	v2 66248 2024-05-02 Impact of Dimensions and Doping on the Breakdown Voltage of a Trench 4H-SiC Vertical JFET f01c51c032f1926783dc4903a9f674d2 FINNIAN MONAGHAN FINNIAN MONAGHAN true false cd433784251add853672979313f838ec 0000-0001-8131-7242 Antonio Martinez Muniz Antonio Martinez Muniz true false f3bbdff7aa4d5da9e8e309a6294bc505 Craig Fisher Craig Fisher true false e0ba5d7ece08cd70c9f8f8683996454a 0000-0003-3270-0805 Mike Jennings Mike Jennings true false 2024-05-02 In this paper we study the feasibility of the design/fabrication of a vertical trench 4H-SiCJunction Field Effect Transistor (JFET), assuming realistic constraints of the depth of the P+implantation. The P+ doping profile is obtained using a Monte Carlo implantation simulation. Thecalculation used a drift-diffusion approach. The JFET aims to achieve a threshold voltage of -3V. Wefound that this constraint in concomitance with the proposed structure limits the breakdown voltageto approximately 200V. This is the result of a premature breakdown induced by short channel effects,namely Drain Induced Barrier Lowering (DIBL). However, a negative increase in the gate biasrepresses this short channel effect and improves the breakdown voltage to roughly 1800V. At thisgate bias, the breakdown is induced by reaching the critical field strength of 4H-SiC at the gate P+/Njunction, which causes avalanche generation of carriers. In addition, we have calculated thedependence of the threshold voltage on the drift doping and pillar width. This work also shows thevulnerability of the design to random fluctuation in the doping profile Journal Article Key Engineering Materials 948 69 75 Trans Tech Publications, Ltd. 1662-9795 Vertical JFET, Threshold voltage, Breakdown Voltage, Drift diffusion simulations, Short Channel Effects 6 6 2023 2023-06-06 10.4028/p-e6c13m COLLEGE NANME COLLEGE CODE Swansea University 2024-06-13T15:57:49.2094505 2024-05-02T16:25:52.0191557 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering FINNIAN MONAGHAN 1 Antonio Martinez Muniz 0000-0001-8131-7242 2 Craig Fisher 3 Mike Jennings 0000-0003-3270-0805 4 66248__30635__34984d9cef1f4105b817ac4cca47b07d.pdf 66248.VoR.pdf 2024-06-13T15:53:55.3125849 Output 630236 application/pdf Version of Record true This article is an open access article under the terms and conditions of the Creative Commons Attribution (CC BY) license. true eng https://creativecommons.org/licenses/by/4.0)
title	Impact of Dimensions and Doping on the Breakdown Voltage of a Trench 4H-SiC Vertical JFET
spellingShingle	Impact of Dimensions and Doping on the Breakdown Voltage of a Trench 4H-SiC Vertical JFET FINNIAN MONAGHAN Antonio Martinez Muniz Craig Fisher Mike Jennings
title_short	Impact of Dimensions and Doping on the Breakdown Voltage of a Trench 4H-SiC Vertical JFET
title_full	Impact of Dimensions and Doping on the Breakdown Voltage of a Trench 4H-SiC Vertical JFET
title_fullStr	Impact of Dimensions and Doping on the Breakdown Voltage of a Trench 4H-SiC Vertical JFET
title_full_unstemmed	Impact of Dimensions and Doping on the Breakdown Voltage of a Trench 4H-SiC Vertical JFET
title_sort	Impact of Dimensions and Doping on the Breakdown Voltage of a Trench 4H-SiC Vertical JFET
author_id_str_mv	f01c51c032f1926783dc4903a9f674d2 cd433784251add853672979313f838ec f3bbdff7aa4d5da9e8e309a6294bc505 e0ba5d7ece08cd70c9f8f8683996454a
author_id_fullname_str_mv	f01c51c032f1926783dc4903a9f674d2_*_FINNIAN MONAGHAN cd433784251add853672979313f838ec__Antonio Martinez Muniz f3bbdff7aa4d5da9e8e309a6294bc505__Craig Fisher e0ba5d7ece08cd70c9f8f8683996454a_*_Mike Jennings
author	FINNIAN MONAGHAN Antonio Martinez Muniz Craig Fisher Mike Jennings
author2	FINNIAN MONAGHAN Antonio Martinez Muniz Craig Fisher Mike Jennings
format	Journal article
container_title	Key Engineering Materials
container_volume	948
container_start_page	69
publishDate	2023
institution	Swansea University
issn	1662-9795
doi_str_mv	10.4028/p-e6c13m
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description	In this paper we study the feasibility of the design/fabrication of a vertical trench 4H-SiCJunction Field Effect Transistor (JFET), assuming realistic constraints of the depth of the P+implantation. The P+ doping profile is obtained using a Monte Carlo implantation simulation. Thecalculation used a drift-diffusion approach. The JFET aims to achieve a threshold voltage of -3V. Wefound that this constraint in concomitance with the proposed structure limits the breakdown voltageto approximately 200V. This is the result of a premature breakdown induced by short channel effects,namely Drain Induced Barrier Lowering (DIBL). However, a negative increase in the gate biasrepresses this short channel effect and improves the breakdown voltage to roughly 1800V. At thisgate bias, the breakdown is induced by reaching the critical field strength of 4H-SiC at the gate P+/Njunction, which causes avalanche generation of carriers. In addition, we have calculated thedependence of the threshold voltage on the drift doping and pillar width. This work also shows thevulnerability of the design to random fluctuation in the doping profile
published_date	2023-06-06T15:57:48Z
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score	11.012678

Impact of Dimensions and Doping on the Breakdown Voltage of a Trench 4H-SiC Vertical JFET

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