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Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates / Fan Li, Valdas Jokubavicius, Mike Jennings, Rositza Yakimova, Amador Pérez Tomás, Stephen Russell, Yogesh Sharma, Fabrizio Roccaforte, Philip A. Mawby, Francesco La Via

Materials Science Forum, Volume: 963, Pages: 353 - 356

Swansea University Author: Mike Jennings

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Published in: Materials Science Forum
ISSN: 1662-9752
Published: Trans Tech Publications, Ltd. 2019
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa57465
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Keywords: 3C-SiC, sublimation epitaxy, gate oxidation, interface trap density
College: College of Engineering
Start Page: 353
End Page: 356