Journal article 615 views
Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates
Fan Li,
Valdas Jokubavicius,
Mike Jennings 
,
Rositza Yakimova,
Amador Pérez Tomás,
Stephen Russell,
Yogesh Sharma,
Fabrizio Roccaforte,
Philip A. Mawby,
Francesco La Via
,
Rositza Yakimova,
Amador Pérez Tomás,
Stephen Russell,
Yogesh Sharma,
Fabrizio Roccaforte,
Philip A. Mawby,
Francesco La Via
Materials Science Forum, Volume: 963, Pages: 353 - 356
Swansea University Author:
Mike Jennings
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.4028/www.scientific.net/msf.963.353
Abstract
Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates
| Published in: | Materials Science Forum |
|---|---|
| ISSN: | 1662-9752 |
| Published: |
Trans Tech Publications, Ltd.
2019
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| Online Access: |
Check full text
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa57465 |
| Tags: |
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| Keywords: |
3C-SiC, sublimation epitaxy, gate oxidation, interface trap density |
|---|---|
| College: |
Faculty of Science and Engineering |
| Start Page: |
353 |
| End Page: |
356 |