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Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates

Fan Li, Valdas Jokubavicius, Mike Jennings Orcid Logo, Rositza Yakimova, Amador Pérez Tomás, Stephen Russell, Yogesh Sharma, Fabrizio Roccaforte, Philip A. Mawby, Francesco La Via

Materials Science Forum, Volume: 963, Pages: 353 - 356

Swansea University Author: Mike Jennings Orcid Logo

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Published in: Materials Science Forum
ISSN: 1662-9752
Published: Trans Tech Publications, Ltd. 2019
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URI: https://cronfa.swan.ac.uk/Record/cronfa57465
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first_indexed 2021-07-28T12:00:20Z
last_indexed 2021-07-29T03:17:08Z
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spelling 2021-07-28T13:05:39.3947635 v2 57465 2021-07-28 Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates e0ba5d7ece08cd70c9f8f8683996454a 0000-0003-3270-0805 Mike Jennings Mike Jennings true false 2021-07-28 EEEG Journal Article Materials Science Forum 963 353 356 Trans Tech Publications, Ltd. 1662-9752 3C-SiC, sublimation epitaxy, gate oxidation, interface trap density 19 7 2019 2019-07-19 10.4028/www.scientific.net/msf.963.353 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2021-07-28T13:05:39.3947635 2021-07-28T12:54:19.1622895 College of Engineering Engineering Fan Li 1 Valdas Jokubavicius 2 Mike Jennings 0000-0003-3270-0805 3 Rositza Yakimova 4 Amador Pérez Tomás 5 Stephen Russell 6 Yogesh Sharma 7 Fabrizio Roccaforte 8 Philip A. Mawby 9 Francesco La Via 10
title Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates
spellingShingle Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates
Mike, Jennings
title_short Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates
title_full Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates
title_fullStr Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates
title_full_unstemmed Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates
title_sort Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates
author_id_str_mv e0ba5d7ece08cd70c9f8f8683996454a
author_id_fullname_str_mv e0ba5d7ece08cd70c9f8f8683996454a_***_Mike, Jennings_***_0000-0003-3270-0805
author Mike, Jennings
author2 Fan Li
Valdas Jokubavicius
Mike Jennings
Rositza Yakimova
Amador Pérez Tomás
Stephen Russell
Yogesh Sharma
Fabrizio Roccaforte
Philip A. Mawby
Francesco La Via
format Journal article
container_title Materials Science Forum
container_volume 963
container_start_page 353
publishDate 2019
institution Swansea University
issn 1662-9752
doi_str_mv 10.4028/www.scientific.net/msf.963.353
publisher Trans Tech Publications, Ltd.
college_str College of Engineering
hierarchytype
hierarchy_top_id collegeofengineering
hierarchy_top_title College of Engineering
hierarchy_parent_id collegeofengineering
hierarchy_parent_title College of Engineering
department_str Engineering{{{_:::_}}}College of Engineering{{{_:::_}}}Engineering
document_store_str 0
active_str 0
published_date 2019-07-19T04:26:08Z
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