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Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating / Stephen A. O. Russell, Amador Perez-Tomas, Christopher F. McConville, Craig A. Fisher, Dean P. Hamilton, Philip A. Mawby, Michael R. Jennings, Mike Jennings

IEEE Journal of the Electron Devices Society, Volume: 5, Issue: 4, Pages: 256 - 261

Swansea University Author: Mike Jennings

Abstract

A method to improve thermal management of β-Ga 2 O 3 FETs is demonstrated here via simulation of epitaxial growth on a 4H-SiC substrate. Using a recently published device as a model, the reduction achieved in self-heating allows the device to be driven at higher gate voltages and increases the overa...

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Published in: IEEE Journal of the Electron Devices Society
ISSN: 2168-6734
Published: 2017
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa49903
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Abstract: A method to improve thermal management of β-Ga 2 O 3 FETs is demonstrated here via simulation of epitaxial growth on a 4H-SiC substrate. Using a recently published device as a model, the reduction achieved in self-heating allows the device to be driven at higher gate voltages and increases the overall performance. For the same operating parameters an 18% increase in peak drain current and 15% reduction in lattice temperature are observed. Device dimensions may be substantially reduced without detriment to performance and normally off operation may be achieved.
College: College of Engineering
Issue: 4
Start Page: 256
End Page: 261