Journal article 774 views 113 downloads
Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating
Stephen A. O. Russell,
Amador Perez-Tomas,
Christopher F. McConville,
Craig A. Fisher,
Dean P. Hamilton,
Philip A. Mawby,
Michael R. Jennings,
Mike Jennings 
IEEE Journal of the Electron Devices Society, Volume: 5, Issue: 4, Pages: 256 - 261
Swansea University Author:
Mike Jennings
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DOI (Published version): 10.1109/JEDS.2017.2706321
Abstract
A method to improve thermal management of β-Ga 2 O 3 FETs is demonstrated here via simulation of epitaxial growth on a 4H-SiC substrate. Using a recently published device as a model, the reduction achieved in self-heating allows the device to be driven at higher gate voltages and increases the overa...
| Published in: | IEEE Journal of the Electron Devices Society |
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| ISSN: | 2168-6734 |
| Published: |
2017
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| Online Access: |
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa49903 |
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| Abstract: |
A method to improve thermal management of β-Ga 2 O 3 FETs is demonstrated here via simulation of epitaxial growth on a 4H-SiC substrate. Using a recently published device as a model, the reduction achieved in self-heating allows the device to be driven at higher gate voltages and increases the overall performance. For the same operating parameters an 18% increase in peak drain current and 15% reduction in lattice temperature are observed. Device dimensions may be substantially reduced without detriment to performance and normally off operation may be achieved. |
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| College: |
Faculty of Science and Engineering |
| Issue: |
4 |
| Start Page: |
256 |
| End Page: |
261 |