No Cover Image

Journal article 57 views 22 downloads

A study on free-standing 3C-SiC bipolar power diodes / Fan Li, Arne Benjamin Renz, Amador Pérez-Tomás, Vishal Shah, Peter Gammon, Francesco La Via, Mike Jennings, Phil Mawby

Applied Physics Letters, Volume: 118, Issue: 24, Start page: 242101

Swansea University Author: Mike Jennings

Check full text

DOI (Published version): 10.1063/5.0054433

Abstract

A low p–n built-in potential (1.75 V) makes 3C-SiC an attractive choice for medium voltage bipolar or charge balanced devices. Until recently, most 3C-SiC had been grown on Si, and power device fabrication had, therefore, been hindered by issues, such as high defect density and limited processing te...

Full description

Published in: Applied Physics Letters
ISSN: 0003-6951 1077-3118
Published: AIP Publishing 2021
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa57198
Tags: Add Tag
No Tags, Be the first to tag this record!
Abstract: A low p–n built-in potential (1.75 V) makes 3C-SiC an attractive choice for medium voltage bipolar or charge balanced devices. Until recently, most 3C-SiC had been grown on Si, and power device fabrication had, therefore, been hindered by issues, such as high defect density and limited processing temperature, while devices were necessarily limited to lateral structures. In this work, we present the fabrication and characterization of a vertical PiN diode using bulk 3C-SiC material. A p-type ohmic contact was obtained on Al implanted regions with a specific contact resistance ∼10−3 Ω cm2. The fabricated PiN diode has a low forward voltage drop of 2.7 V at 1000 A/cm2, and the on–off ratio at ±3 V is as high as 109. An ideality factor of 1.83–1.99 was achieved, and a blocking voltage of ∼110 V was observed using a single-zone junction termination design.
College: College of Engineering
Issue: 24
Start Page: 242101