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Reliability Study of MOS Capacitors Fabricated on 3C-SiC/Si Substrates

Fan Li, Song Qiu, Mike Jennings Orcid Logo, Phil Mawby

Materials Science Forum, Volume: 1004, Pages: 659 - 664

Swansea University Author: Mike Jennings Orcid Logo

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Published in: Materials Science Forum
ISSN: 1662-9752
Published: Trans Tech Publications, Ltd. 2020
Online Access: Check full text

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Keywords: 3C-SiC, MOS capacitors, reliability, dielectric breakdown
College: Faculty of Science and Engineering
Start Page: 659
End Page: 664