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Reliability Study of MOS Capacitors Fabricated on 3C-SiC/Si Substrates

Fan Li, Song Qiu, Mike Jennings Orcid Logo, Phil Mawby

Materials Science Forum, Volume: 1004, Pages: 659 - 664

Swansea University Author: Mike Jennings Orcid Logo

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Published in: Materials Science Forum
ISSN: 1662-9752
Published: Trans Tech Publications, Ltd. 2020
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa57466
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first_indexed 2021-07-28T12:37:28Z
last_indexed 2021-07-29T03:17:08Z
id cronfa57466
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fullrecord <?xml version="1.0"?><rfc1807><datestamp>2021-07-28T15:28:02.4923189</datestamp><bib-version>v2</bib-version><id>57466</id><entry>2021-07-28</entry><title>Reliability Study of MOS Capacitors Fabricated on 3C-SiC/Si Substrates</title><swanseaauthors><author><sid>e0ba5d7ece08cd70c9f8f8683996454a</sid><ORCID>0000-0003-3270-0805</ORCID><firstname>Mike</firstname><surname>Jennings</surname><name>Mike Jennings</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2021-07-28</date><deptcode>EEEG</deptcode><abstract/><type>Journal Article</type><journal>Materials Science Forum</journal><volume>1004</volume><journalNumber/><paginationStart>659</paginationStart><paginationEnd>664</paginationEnd><publisher>Trans Tech Publications, Ltd.</publisher><placeOfPublication/><isbnPrint/><isbnElectronic/><issnPrint/><issnElectronic>1662-9752</issnElectronic><keywords>3C-SiC, MOS capacitors, reliability, dielectric breakdown</keywords><publishedDay>28</publishedDay><publishedMonth>7</publishedMonth><publishedYear>2020</publishedYear><publishedDate>2020-07-28</publishedDate><doi>10.4028/www.scientific.net/msf.1004.659</doi><url/><notes/><college>COLLEGE NANME</college><department>Electronic and Electrical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEEG</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2021-07-28T15:28:02.4923189</lastEdited><Created>2021-07-28T13:07:42.3464180</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering</level></path><authors><author><firstname>Fan</firstname><surname>Li</surname><order>1</order></author><author><firstname>Song</firstname><surname>Qiu</surname><order>2</order></author><author><firstname>Mike</firstname><surname>Jennings</surname><orcid>0000-0003-3270-0805</orcid><order>3</order></author><author><firstname>Phil</firstname><surname>Mawby</surname><order>4</order></author></authors><documents/><OutputDurs/></rfc1807>
spelling 2021-07-28T15:28:02.4923189 v2 57466 2021-07-28 Reliability Study of MOS Capacitors Fabricated on 3C-SiC/Si Substrates e0ba5d7ece08cd70c9f8f8683996454a 0000-0003-3270-0805 Mike Jennings Mike Jennings true false 2021-07-28 EEEG Journal Article Materials Science Forum 1004 659 664 Trans Tech Publications, Ltd. 1662-9752 3C-SiC, MOS capacitors, reliability, dielectric breakdown 28 7 2020 2020-07-28 10.4028/www.scientific.net/msf.1004.659 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2021-07-28T15:28:02.4923189 2021-07-28T13:07:42.3464180 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Fan Li 1 Song Qiu 2 Mike Jennings 0000-0003-3270-0805 3 Phil Mawby 4
title Reliability Study of MOS Capacitors Fabricated on 3C-SiC/Si Substrates
spellingShingle Reliability Study of MOS Capacitors Fabricated on 3C-SiC/Si Substrates
Mike Jennings
title_short Reliability Study of MOS Capacitors Fabricated on 3C-SiC/Si Substrates
title_full Reliability Study of MOS Capacitors Fabricated on 3C-SiC/Si Substrates
title_fullStr Reliability Study of MOS Capacitors Fabricated on 3C-SiC/Si Substrates
title_full_unstemmed Reliability Study of MOS Capacitors Fabricated on 3C-SiC/Si Substrates
title_sort Reliability Study of MOS Capacitors Fabricated on 3C-SiC/Si Substrates
author_id_str_mv e0ba5d7ece08cd70c9f8f8683996454a
author_id_fullname_str_mv e0ba5d7ece08cd70c9f8f8683996454a_***_Mike Jennings
author Mike Jennings
author2 Fan Li
Song Qiu
Mike Jennings
Phil Mawby
format Journal article
container_title Materials Science Forum
container_volume 1004
container_start_page 659
publishDate 2020
institution Swansea University
issn 1662-9752
doi_str_mv 10.4028/www.scientific.net/msf.1004.659
publisher Trans Tech Publications, Ltd.
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
published_date 2020-07-28T04:13:13Z
_version_ 1763753899053809664
score 11.017797