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Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates

Fan Li, Valdas Jokubavicius, Mike Jennings Orcid Logo, Rositza Yakimova, Amador Pérez Tomás, Stephen Russell, Yogesh Sharma, Fabrizio Roccaforte, Philip A. Mawby, Francesco La Via

Materials Science Forum, Volume: 963, Pages: 353 - 356

Swansea University Author: Mike Jennings Orcid Logo

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Published in: Materials Science Forum
ISSN: 1662-9752
Published: Trans Tech Publications, Ltd. 2019
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa57465
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Keywords: 3C-SiC, sublimation epitaxy, gate oxidation, interface trap density
College: College of Engineering
Start Page: 353
End Page: 356