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Dark exciton-exciton annihilation in monolayer WSe2

Daniel Erkensten Orcid Logo, Samuel Brem Orcid Logo, Koloman Wagner Orcid Logo, Roland Gillen Orcid Logo, Raül Perea-Causín Orcid Logo, Jonas D. Ziegler Orcid Logo, Takashi Taniguchi Orcid Logo, Kenji Watanabe Orcid Logo, Janina Maultzsch Orcid Logo, Alexey Chernikov Orcid Logo, Ermin Malic Orcid Logo

Physical Review B, Volume: 104, Issue: 24

Swansea University Author: Roland Gillen Orcid Logo

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DOI (Published version): 10.1103/physrevb.104.l241406

Abstract

The exceptionally strong Coulomb interaction in semiconducting transition-metal dichalcogenides (TMDs) gives rise to a rich exciton landscape consisting of bright and dark exciton states. At elevated densities, excitons can interact through exciton-exciton annihilation (EEA), an Auger-like recombina...

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Published in: Physical Review B
ISSN: 2469-9950 2469-9969
Published: American Physical Society (APS) 2021
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URI: https://cronfa.swan.ac.uk/Record/cronfa66653
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Although EEA is a well-known and particularly important process in atomically thin semiconductors determining exciton lifetimes and affecting transport at elevated densities, its microscopic origin has remained elusive. In this joint theory-experiment study combining microscopic and material-specific theory with time- and temperature-resolved photoluminescence measurements, we demonstrate the key role of dark intervalley states that are found to dominate the EEA rate in monolayer WSe2. We reveal an intriguing, characteristic temperature dependence of Auger scattering in this class of materials with an excellent agreement between theory and experiment. 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spelling v2 66653 2024-06-11 Dark exciton-exciton annihilation in monolayer WSe2 8fd99815709ad1e4ae52e27f63257604 0000-0002-7913-0953 Roland Gillen Roland Gillen true false 2024-06-11 ACEM The exceptionally strong Coulomb interaction in semiconducting transition-metal dichalcogenides (TMDs) gives rise to a rich exciton landscape consisting of bright and dark exciton states. At elevated densities, excitons can interact through exciton-exciton annihilation (EEA), an Auger-like recombination process limiting the efficiency of optoelectronic applications. Although EEA is a well-known and particularly important process in atomically thin semiconductors determining exciton lifetimes and affecting transport at elevated densities, its microscopic origin has remained elusive. In this joint theory-experiment study combining microscopic and material-specific theory with time- and temperature-resolved photoluminescence measurements, we demonstrate the key role of dark intervalley states that are found to dominate the EEA rate in monolayer WSe2. We reveal an intriguing, characteristic temperature dependence of Auger scattering in this class of materials with an excellent agreement between theory and experiment. Our study provides microscopic insights into the efficiency of technologically relevant Auger scattering channels within the remarkable exciton landscape of atomically thin semiconductors. Journal Article Physical Review B 104 24 American Physical Society (APS) 2469-9950 2469-9969 17 12 2021 2021-12-17 10.1103/physrevb.104.l241406 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University Another institution paid the OA fee Wethank Maja Feierabend (Chalmers) and Paulo Eduardo de Faria Junior and Kai-Qiang Lin (University of Regensburg) for fruitful discussions. This project received funding from Deutsche Forschungsgemeinschaft via CRC 1083 (Project No. B09), Emmy Noether Initiative (CH 1672/1, ProjectID 287022282), CRC 1277 (Project-ID 314695032, Project No. B05), CRC 953 (Project No. B13), the European Unions Horizon 2020 research and innovation program under Grant agreement No. 881603 (Graphene Flagship) and the Würzburg-Dresden Cluster of Excellence on Complexity and Topology in Quantum Matter ct.qmat (EXC 2147, Project-ID: 390858490). Furthermore, we are thankful to Vinnova for the support via the 2D-TECH competence center. K.Watanabe and T.T. acknowledge support from the Elemental Strategy Initiative conducted by the MEXT, Japan (Grant No. JPMXP0112101001) and JSPS KAKENHI (Grants No. JP19H05790 and No. JP20H00354). 2024-08-13T16:22:03.0846052 2024-06-11T12:43:01.3270953 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Daniel Erkensten 0000-0002-9632-6376 1 Samuel Brem 0000-0001-8823-1302 2 Koloman Wagner 0000-0001-5561-5318 3 Roland Gillen 0000-0002-7913-0953 4 Raül Perea-Causín 0000-0002-2229-0147 5 Jonas D. Ziegler 0000-0002-2683-5124 6 Takashi Taniguchi 0000-0002-1467-3105 7 Kenji Watanabe 0000-0003-3701-8119 8 Janina Maultzsch 0000-0002-6088-2442 9 Alexey Chernikov 0000-0002-9213-2777 10 Ermin Malic 0000-0003-1434-9003 11 66653__31099__4ad9a5cde11f4533b63dd4b7cccf09e6.pdf 66653.VoR.pdf 2024-08-13T16:20:09.0827838 Output 1231665 application/pdf Version of Record true Released under the terms of the Creative Commons Attribution 4.0 International license. true eng https://creativecommons.org/licenses/by/4.0/
title Dark exciton-exciton annihilation in monolayer WSe2
spellingShingle Dark exciton-exciton annihilation in monolayer WSe2
Roland Gillen
title_short Dark exciton-exciton annihilation in monolayer WSe2
title_full Dark exciton-exciton annihilation in monolayer WSe2
title_fullStr Dark exciton-exciton annihilation in monolayer WSe2
title_full_unstemmed Dark exciton-exciton annihilation in monolayer WSe2
title_sort Dark exciton-exciton annihilation in monolayer WSe2
author_id_str_mv 8fd99815709ad1e4ae52e27f63257604
author_id_fullname_str_mv 8fd99815709ad1e4ae52e27f63257604_***_Roland Gillen
author Roland Gillen
author2 Daniel Erkensten
Samuel Brem
Koloman Wagner
Roland Gillen
Raül Perea-Causín
Jonas D. Ziegler
Takashi Taniguchi
Kenji Watanabe
Janina Maultzsch
Alexey Chernikov
Ermin Malic
format Journal article
container_title Physical Review B
container_volume 104
container_issue 24
publishDate 2021
institution Swansea University
issn 2469-9950
2469-9969
doi_str_mv 10.1103/physrevb.104.l241406
publisher American Physical Society (APS)
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description The exceptionally strong Coulomb interaction in semiconducting transition-metal dichalcogenides (TMDs) gives rise to a rich exciton landscape consisting of bright and dark exciton states. At elevated densities, excitons can interact through exciton-exciton annihilation (EEA), an Auger-like recombination process limiting the efficiency of optoelectronic applications. Although EEA is a well-known and particularly important process in atomically thin semiconductors determining exciton lifetimes and affecting transport at elevated densities, its microscopic origin has remained elusive. In this joint theory-experiment study combining microscopic and material-specific theory with time- and temperature-resolved photoluminescence measurements, we demonstrate the key role of dark intervalley states that are found to dominate the EEA rate in monolayer WSe2. We reveal an intriguing, characteristic temperature dependence of Auger scattering in this class of materials with an excellent agreement between theory and experiment. Our study provides microscopic insights into the efficiency of technologically relevant Auger scattering channels within the remarkable exciton landscape of atomically thin semiconductors.
published_date 2021-12-17T16:22:04Z
_version_ 1807286297553797120
score 11.021648

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