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Development of ZnO Buffer Layers for As‐Doped CdSeTe/CdTe Solar Cells with Efficiency Exceeding 20%
,
Xiaolei Liu,
Mustafa Togay,
Ali Abbas,
Adam M. Law,
Luke O. Jones,
Kieran M. Curson,
Kurt L. Barth,
Jake W. Bowers,
John M. Walls,
Ochai Oklobia,
Dan Lamb ,
Stuart Irvine,
Wei Zhang,
Chungho Lee,
Timothy Nagle,
Dingyuan Lu,
Gang Xiong
Advanced Materials Technologies, Volume: 10, Issue: 13, Start page: 2401364
Swansea University Authors:
Ochai Oklobia, Dan Lamb , Stuart Irvine
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DOI (Published version): 10.1002/admt.202401364
Abstract
The front buffer layer plays an important role in CdSeTe/CdTe solar cells and helps achieve high conversion efficiencies. Incorporating ZnO buffer layers in the CdSeTe/CdTe device structure has led to highly efficient and stable solar cells. In this study, the optimization of ZnO buffer layers for C...
| Published in: | Advanced Materials Technologies |
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| ISSN: | 2365-709X 2365-709X |
| Published: |
Wiley
2025
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| Online Access: |
Check full text
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa69990 |
| Abstract: |
The front buffer layer plays an important role in CdSeTe/CdTe solar cells and helps achieve high conversion efficiencies. Incorporating ZnO buffer layers in the CdSeTe/CdTe device structure has led to highly efficient and stable solar cells. In this study, the optimization of ZnO buffer layers for CdSeTe/CdTe solar cells is reported. The ZnO films are radio frequency sputter‐deposited on SnO2:F coated soda‐lime glass substrates. The substrate temperature for the ZnO deposition is varied from 22 to 500 °C. An efficiency of 20.74% is achieved using ZnO deposited at 100 °C. The ZnO thickness is varied between 40 nm and 75 nm. Following the ZnO depositions, devices were fabricated using First Solar's CdSeTe/CdTe absorber, CdCl2 treatment, and back contact. The optimal ZnO deposition temperature and thickness is 100 °C and 65 nm, respectively. The STEM‐EDX analysis shows that within the detection limits, chlorine is not detected at the front interface of the devices using ZnO deposited at 22 °C and 100 °C. However, depositing ZnO at 500 °C results in chlorine segregation appearing at the ZnO/CdSeTe boundary. This suggests that chlorine is not needed to passivate the ZnO/CdSeTe interface during the lower temperature depositions. The nanocrystalline ZnO deposited at lower temperatures results in a high‐quality interface. |
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| Keywords: |
buffer layer, CdSeTe/CdTe, solar cells, ZnO |
| College: |
Faculty of Science and Engineering |
| Funders: |
Engineering and Physical Sciences Research Council. Grant Numbers: EP/W00092X/1, EP/W000555/1 |
| Issue: |
13 |
| Start Page: |
2401364 |