Polarization-dimension competition in centrosymmetric flexoelectronic transistors

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Gongwei Hu, Yihan Zhang, Xiaoyu Lu, Yanshan Xiao, Junjun Hu, Chao Yong, Lijie Li

, Wei Huang, Fobao Huang

Materials Today Physics, Volume: 64, Start page: 102121

Swansea University Author: Lijie Li

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DOI (Published version): 10.1016/j.mtphys.2026.102121

Published in:	Materials Today Physics
ISSN:	2542-5293
Published:	Elsevier BV 2026
Online Access:	Check full text
URI:	https://cronfa.swan.ac.uk/Record/cronfa71859

Keywords:	Flexoelectronic transistor; Polarization–dimension competition; Interface barrier; Centrosymmetric semiconductors
College:	Faculty of Science and Engineering
Funders:	This work was supported by the National Natural Science Foundation of China (Grant No. 62404125), the Natural Science Foundation of Hubei Province (Grant No. 2024AFB359), the Youth Talent Project of the Science and Technology Research Program of the Education Department of Hubei Province (Grant No. Q20241213), the Guangdong Basic and Applied Basic Research Foundation (Grant No. 2025A1515011971), and the Basic Research Programs of Taicang, 2024 (Grant No. TC2024JC40).
Start Page:	102121