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Creating room temperature Ohmic contacts to 4H-SiC: studied by specific contact resistance measurements and X-ray photoelectron spectroscopy / O.J Guy, G Pope, I Blackwood, K.S Teng, L Chen, W.Y Lee, S.P Wilks, P.A Mawby, Owen Guy, Vincent Teng

Pages: 253 - 263

Swansea University Authors: Owen Guy, Vincent Teng

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DOI (Published version): 10.1016/j.susc.2004.09.035

Published: 2004
URI: https://cronfa.swan.ac.uk/Record/cronfa1842
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spelling 2011-10-01T00:00:00.0000000 v2 1842 2011-10-01 Creating room temperature Ohmic contacts to 4H-SiC: studied by specific contact resistance measurements and X-ray photoelectron spectroscopy c7fa5949b8528e048c5b978005f66794 0000-0002-6449-4033 Owen Guy Owen Guy true false 98f529f56798da1ba3e6e93d2817c114 0000-0003-4325-8573 Vincent Teng Vincent Teng true false 2011-10-01 CHEM Journal Article 253 263 31 12 2004 2004-12-31 10.1016/j.susc.2004.09.035 COLLEGE NANME Chemistry COLLEGE CODE CHEM Swansea University 2011-10-01T00:00:00.0000000 2011-10-01T00:00:00.0000000 College of Engineering Engineering O.J Guy 1 G Pope 2 I Blackwood 3 K.S Teng 4 L Chen 5 W.Y Lee 6 S.P Wilks 7 P.A Mawby 8 Owen Guy 0000-0002-6449-4033 9 Vincent Teng 0000-0003-4325-8573 10
title Creating room temperature Ohmic contacts to 4H-SiC: studied by specific contact resistance measurements and X-ray photoelectron spectroscopy
spellingShingle Creating room temperature Ohmic contacts to 4H-SiC: studied by specific contact resistance measurements and X-ray photoelectron spectroscopy
Owen, Guy
Vincent, Teng
title_short Creating room temperature Ohmic contacts to 4H-SiC: studied by specific contact resistance measurements and X-ray photoelectron spectroscopy
title_full Creating room temperature Ohmic contacts to 4H-SiC: studied by specific contact resistance measurements and X-ray photoelectron spectroscopy
title_fullStr Creating room temperature Ohmic contacts to 4H-SiC: studied by specific contact resistance measurements and X-ray photoelectron spectroscopy
title_full_unstemmed Creating room temperature Ohmic contacts to 4H-SiC: studied by specific contact resistance measurements and X-ray photoelectron spectroscopy
title_sort Creating room temperature Ohmic contacts to 4H-SiC: studied by specific contact resistance measurements and X-ray photoelectron spectroscopy
author_id_str_mv c7fa5949b8528e048c5b978005f66794
98f529f56798da1ba3e6e93d2817c114
author_id_fullname_str_mv c7fa5949b8528e048c5b978005f66794_***_Owen, Guy
98f529f56798da1ba3e6e93d2817c114_***_Vincent, Teng
author Owen, Guy
Vincent, Teng
author2 O.J Guy
G Pope
I Blackwood
K.S Teng
L Chen
W.Y Lee
S.P Wilks
P.A Mawby
Owen Guy
Vincent Teng
format Journal article
container_start_page 253
publishDate 2004
institution Swansea University
doi_str_mv 10.1016/j.susc.2004.09.035
college_str College of Engineering
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hierarchy_top_title College of Engineering
hierarchy_parent_id collegeofengineering
hierarchy_parent_title College of Engineering
department_str Engineering{{{_:::_}}}College of Engineering{{{_:::_}}}Engineering
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published_date 2004-12-31T03:14:01Z
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