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Improved Schottky contacts to annealed 4H-SiC using a protective carbon cap: Investigated using current voltage measurements and atomic force microscopy / O.J Guy, D Doneddu, L Chen, M.R Jennings, M.P Ackland, R Baylis, M.D Holton, P Dunstan, S.P Wilks, P.A Mawby, Owen Guy

Pages: 1472 - 1477

Swansea University Author: Owen Guy

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DOI (Published version): 10.1016/j.diamond.2005.11.010

Published: 2006
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College: College of Engineering
Start Page: 1472
End Page: 1477