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Study of Local Power Dissipation in Ultrascaled Silicon Nanowire FETs

Antonio Martinez Muniz Orcid Logo, John R. Barker, Manuel Aldegunde, Raul Valin

IEEE Electron Device Letters, Volume: 36, Issue: 1, Pages: 2 - 4

Swansea University Author: Antonio Martinez Muniz Orcid Logo

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DOI (Published version): 10.1109/LED.2014.2368357

Abstract

The local electron power dissipation has been calculated in a field-effect nanowire transistor using a quantum transport formalism. Two different channel cross sections and optical and acoustic phonon mechanisms were considered. The phonon models used reproduce the phonon limited mobility in the cro...

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Published in: IEEE Electron Device Letters
ISSN: 0741-3106 1558-0563
Published: 2015
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URI: https://cronfa.swan.ac.uk/Record/cronfa22743
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first_indexed 2015-08-02T02:04:27Z
last_indexed 2020-09-12T02:37:39Z
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spelling 2020-09-11T11:54:51.9521429 v2 22743 2015-08-01 Study of Local Power Dissipation in Ultrascaled Silicon Nanowire FETs cd433784251add853672979313f838ec 0000-0001-8131-7242 Antonio Martinez Muniz Antonio Martinez Muniz true false 2015-08-01 EEEG The local electron power dissipation has been calculated in a field-effect nanowire transistor using a quantum transport formalism. Two different channel cross sections and optical and acoustic phonon mechanisms were considered. The phonon models used reproduce the phonon limited mobility in the cross sections studied. The power dissipation for different combinations of source, channel, and drain dimensions have been calculated. Due to the lack of complete electron energy relaxation inside the device, the Joule heat dissipation over-estimates the power dissipated in small nanotransistors. This over-estimation is larger for large cross sections due to the weaker phonon scattering. On the other hand, in narrow wires, the power dissipation inside the device can be large, therefore, mitigating against fabrication of very narrow nanowire transistors. We have also investigated the cooling of the device source region due to the mismatch of the Peltier coefficients between the source and the channel. Journal Article IEEE Electron Device Letters 36 1 2 4 0741-3106 1558-0563 31 1 2015 2015-01-31 10.1109/LED.2014.2368357 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2020-09-11T11:54:51.9521429 2015-08-01T13:08:31.6174656 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Antonio Martinez Muniz 0000-0001-8131-7242 1 John R. Barker 2 Manuel Aldegunde 3 Raul Valin 4 0022743-20072016145541.pdf Martinez2015.pdf 2016-07-20T14:55:41.6370000 Output 461531 application/pdf Version of Record true 2016-07-20T00:00:00.0000000 false
title Study of Local Power Dissipation in Ultrascaled Silicon Nanowire FETs
spellingShingle Study of Local Power Dissipation in Ultrascaled Silicon Nanowire FETs
Antonio Martinez Muniz
title_short Study of Local Power Dissipation in Ultrascaled Silicon Nanowire FETs
title_full Study of Local Power Dissipation in Ultrascaled Silicon Nanowire FETs
title_fullStr Study of Local Power Dissipation in Ultrascaled Silicon Nanowire FETs
title_full_unstemmed Study of Local Power Dissipation in Ultrascaled Silicon Nanowire FETs
title_sort Study of Local Power Dissipation in Ultrascaled Silicon Nanowire FETs
author_id_str_mv cd433784251add853672979313f838ec
author_id_fullname_str_mv cd433784251add853672979313f838ec_***_Antonio Martinez Muniz
author Antonio Martinez Muniz
author2 Antonio Martinez Muniz
John R. Barker
Manuel Aldegunde
Raul Valin
format Journal article
container_title IEEE Electron Device Letters
container_volume 36
container_issue 1
container_start_page 2
publishDate 2015
institution Swansea University
issn 0741-3106
1558-0563
doi_str_mv 10.1109/LED.2014.2368357
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description The local electron power dissipation has been calculated in a field-effect nanowire transistor using a quantum transport formalism. Two different channel cross sections and optical and acoustic phonon mechanisms were considered. The phonon models used reproduce the phonon limited mobility in the cross sections studied. The power dissipation for different combinations of source, channel, and drain dimensions have been calculated. Due to the lack of complete electron energy relaxation inside the device, the Joule heat dissipation over-estimates the power dissipated in small nanotransistors. This over-estimation is larger for large cross sections due to the weaker phonon scattering. On the other hand, in narrow wires, the power dissipation inside the device can be large, therefore, mitigating against fabrication of very narrow nanowire transistors. We have also investigated the cooling of the device source region due to the mismatch of the Peltier coefficients between the source and the channel.
published_date 2015-01-31T03:26:57Z
_version_ 1763750987443470336
score 11.012678

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