No Cover Image

Journal article 1525 views 209 downloads

The effects of surface stripping ZnO nanorods with argon bombardment

Chris J Barnett, Olga Kryvchenkova, Nathan A Smith, Liam Kelleher, Thierry Maffeis Orcid Logo, Richard Cobley Orcid Logo

Nanotechnology, Volume: 26, Issue: 41, Start page: 415701

Swansea University Authors: Thierry Maffeis Orcid Logo, Richard Cobley Orcid Logo

Check full text

DOI (Published version): 10.1088/0957-4484/26/41/415701

Abstract

ZnO nanorods are used in devices including field effects transistors, piezoelectric transducers, optoelectronics and gas sensors. However, for efficient and reproducible device operation and contact behaviour, surface contaminants must be removed or controlled. Here we use low doses of argon bombard...

Full description

Published in: Nanotechnology
ISSN: 0957-4484 1361-6528
Published: 2015
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa23525
Tags: Add Tag
No Tags, Be the first to tag this record!
first_indexed 2015-10-02T02:09:19Z
last_indexed 2018-04-30T19:11:15Z
id cronfa23525
recordtype SURis
fullrecord <?xml version="1.0"?><rfc1807><datestamp>2018-04-30T14:26:12.3884466</datestamp><bib-version>v2</bib-version><id>23525</id><entry>2015-10-01</entry><title>The effects of surface stripping ZnO nanorods with argon bombardment</title><swanseaauthors><author><sid>992eb4cb18b61c0cd3da6e0215ac787c</sid><ORCID>0000-0003-2357-0092</ORCID><firstname>Thierry</firstname><surname>Maffeis</surname><name>Thierry Maffeis</name><active>true</active><ethesisStudent>false</ethesisStudent></author><author><sid>2ce7e1dd9006164425415a35fa452494</sid><ORCID>0000-0003-4833-8492</ORCID><firstname>Richard</firstname><surname>Cobley</surname><name>Richard Cobley</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2015-10-01</date><deptcode>EEEG</deptcode><abstract>ZnO nanorods are used in devices including field effects transistors, piezoelectric transducers, optoelectronics and gas sensors. However, for efficient and reproducible device operation and contact behaviour, surface contaminants must be removed or controlled. Here we use low doses of argon bombardment to remove surface contamination and make reproducible lower resistance contacts. Higher doses strip the surface of the nanorods allowing intrinsic surface measurements through a cross section of the material. Photoluminescence finds that the defect distribution is higher at the near-surface, falling away in to the bulk. Contacts to the n-type defect-rich surface are near-Ohmic, whereas stripping away the surface layers allows more rectifying Schottky contacts to be formed. The ability to select the contact type to ZnO nanorods offers a new way to customize device behaviour.</abstract><type>Journal Article</type><journal>Nanotechnology</journal><volume>26</volume><journalNumber>41</journalNumber><paginationStart>415701</paginationStart><publisher/><issnPrint>0957-4484</issnPrint><issnElectronic>1361-6528</issnElectronic><keywords>ZnO, Argon bombardment, Ohmic, Schottky, Contacts</keywords><publishedDay>22</publishedDay><publishedMonth>9</publishedMonth><publishedYear>2015</publishedYear><publishedDate>2015-09-22</publishedDate><doi>10.1088/0957-4484/26/41/415701</doi><url/><notes>Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.</notes><college>COLLEGE NANME</college><department>Electronic and Electrical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEEG</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2018-04-30T14:26:12.3884466</lastEdited><Created>2015-10-01T13:43:34.8173839</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering</level></path><authors><author><firstname>Chris J</firstname><surname>Barnett</surname><order>1</order></author><author><firstname>Olga</firstname><surname>Kryvchenkova</surname><order>2</order></author><author><firstname>Nathan A</firstname><surname>Smith</surname><order>3</order></author><author><firstname>Liam</firstname><surname>Kelleher</surname><order>4</order></author><author><firstname>Thierry</firstname><surname>Maffeis</surname><orcid>0000-0003-2357-0092</orcid><order>5</order></author><author><firstname>Richard</firstname><surname>Cobley</surname><orcid>0000-0003-4833-8492</orcid><order>6</order></author></authors><documents><document><filename>0023525-15072016124454.pdf</filename><originalFilename>Barnett2015.pdf</originalFilename><uploaded>2016-07-15T12:44:54.5470000</uploaded><type>Output</type><contentLength>427536</contentLength><contentType>application/pdf</contentType><version>Version of Record</version><cronfaStatus>true</cronfaStatus><embargoDate>2016-07-15T00:00:00.0000000</embargoDate><copyrightCorrect>false</copyrightCorrect></document></documents><OutputDurs/></rfc1807>
spelling 2018-04-30T14:26:12.3884466 v2 23525 2015-10-01 The effects of surface stripping ZnO nanorods with argon bombardment 992eb4cb18b61c0cd3da6e0215ac787c 0000-0003-2357-0092 Thierry Maffeis Thierry Maffeis true false 2ce7e1dd9006164425415a35fa452494 0000-0003-4833-8492 Richard Cobley Richard Cobley true false 2015-10-01 EEEG ZnO nanorods are used in devices including field effects transistors, piezoelectric transducers, optoelectronics and gas sensors. However, for efficient and reproducible device operation and contact behaviour, surface contaminants must be removed or controlled. Here we use low doses of argon bombardment to remove surface contamination and make reproducible lower resistance contacts. Higher doses strip the surface of the nanorods allowing intrinsic surface measurements through a cross section of the material. Photoluminescence finds that the defect distribution is higher at the near-surface, falling away in to the bulk. Contacts to the n-type defect-rich surface are near-Ohmic, whereas stripping away the surface layers allows more rectifying Schottky contacts to be formed. The ability to select the contact type to ZnO nanorods offers a new way to customize device behaviour. Journal Article Nanotechnology 26 41 415701 0957-4484 1361-6528 ZnO, Argon bombardment, Ohmic, Schottky, Contacts 22 9 2015 2015-09-22 10.1088/0957-4484/26/41/415701 Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2018-04-30T14:26:12.3884466 2015-10-01T13:43:34.8173839 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Chris J Barnett 1 Olga Kryvchenkova 2 Nathan A Smith 3 Liam Kelleher 4 Thierry Maffeis 0000-0003-2357-0092 5 Richard Cobley 0000-0003-4833-8492 6 0023525-15072016124454.pdf Barnett2015.pdf 2016-07-15T12:44:54.5470000 Output 427536 application/pdf Version of Record true 2016-07-15T00:00:00.0000000 false
title The effects of surface stripping ZnO nanorods with argon bombardment
spellingShingle The effects of surface stripping ZnO nanorods with argon bombardment
Thierry Maffeis
Richard Cobley
title_short The effects of surface stripping ZnO nanorods with argon bombardment
title_full The effects of surface stripping ZnO nanorods with argon bombardment
title_fullStr The effects of surface stripping ZnO nanorods with argon bombardment
title_full_unstemmed The effects of surface stripping ZnO nanorods with argon bombardment
title_sort The effects of surface stripping ZnO nanorods with argon bombardment
author_id_str_mv 992eb4cb18b61c0cd3da6e0215ac787c
2ce7e1dd9006164425415a35fa452494
author_id_fullname_str_mv 992eb4cb18b61c0cd3da6e0215ac787c_***_Thierry Maffeis
2ce7e1dd9006164425415a35fa452494_***_Richard Cobley
author Thierry Maffeis
Richard Cobley
author2 Chris J Barnett
Olga Kryvchenkova
Nathan A Smith
Liam Kelleher
Thierry Maffeis
Richard Cobley
format Journal article
container_title Nanotechnology
container_volume 26
container_issue 41
container_start_page 415701
publishDate 2015
institution Swansea University
issn 0957-4484
1361-6528
doi_str_mv 10.1088/0957-4484/26/41/415701
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description ZnO nanorods are used in devices including field effects transistors, piezoelectric transducers, optoelectronics and gas sensors. However, for efficient and reproducible device operation and contact behaviour, surface contaminants must be removed or controlled. Here we use low doses of argon bombardment to remove surface contamination and make reproducible lower resistance contacts. Higher doses strip the surface of the nanorods allowing intrinsic surface measurements through a cross section of the material. Photoluminescence finds that the defect distribution is higher at the near-surface, falling away in to the bulk. Contacts to the n-type defect-rich surface are near-Ohmic, whereas stripping away the surface layers allows more rectifying Schottky contacts to be formed. The ability to select the contact type to ZnO nanorods offers a new way to customize device behaviour.
published_date 2015-09-22T03:27:45Z
_version_ 1763751037766729728
score 11.017797

Similar Items