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High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber / H.D. Summers, C.H. Molloy, P.M. Smowton, P. Rees, I. Pierce, D.R. Jones, Paul Rees, Huw Summers

IEEE 16th International Semiconductor Laser Conference, Pages: 145 - 146

Swansea University Authors: Paul Rees, Huw Summers

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Published in: IEEE 16th International Semiconductor Laser Conference
ISBN: 0-7803-4223-2
ISSN: 0899-9406
Published: Nara, Japan IEEE 16th International Semiconductor Laser Conference 1998
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URI: https://cronfa.swan.ac.uk/Record/cronfa25603
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Item Description: @article rees1998,title = High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber,journal = Conference Digest - IEEE International Semiconductor Laser Conference,year = 1998,pages = 145-146,author = Summers, H.D. and Molloy, C.H. and Smowton, P.M. and Rees, P. and Pierce, I. and Jones, D.R.
College: College of Engineering
Start Page: 145
End Page: 146