Conference Paper/Proceeding/Abstract 1068 views
High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber
IEEE 16th International Semiconductor Laser Conference, Pages: 145 - 146
Swansea University Authors:
Paul Rees , Huw Summers
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DOI (Published version): 10.1109/ISLC.1998.734178
Abstract
High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber
Published in: | IEEE 16th International Semiconductor Laser Conference |
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ISBN: | 0-7803-4223-2 |
ISSN: | 0899-9406 |
Published: |
Nara, Japan
IEEE 16th International Semiconductor Laser Conference
1998
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Online Access: |
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URI: | https://cronfa.swan.ac.uk/Record/cronfa25603 |
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Item Description: |
@article rees1998,title = High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber,journal = Conference Digest - IEEE International Semiconductor Laser Conference,year = 1998,pages = 145-146,author = Summers, H.D. and Molloy, C.H. and Smowton, P.M. and Rees, P. and Pierce, I. and Jones, D.R. |
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College: |
Faculty of Science and Engineering |
Start Page: |
145 |
End Page: |
146 |