Conference Paper/Proceeding/Abstract 1135 views
High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber
H.D. Summers,
C.H. Molloy,
P.M. Smowton,
P. Rees,
I. Pierce,
D.R. Jones,
Paul Rees 
,
Huw Summers
,
Huw Summers
IEEE 16th International Semiconductor Laser Conference, Pages: 145 - 146
Swansea University Authors:
Paul Rees , Huw Summers
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1109/ISLC.1998.734178
Abstract
High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber
| Published in: | IEEE 16th International Semiconductor Laser Conference |
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| ISBN: | 0-7803-4223-2 |
| ISSN: | 0899-9406 |
| Published: |
Nara, Japan
IEEE 16th International Semiconductor Laser Conference
1998
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| Online Access: |
Check full text
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa25603 |
| Item Description: |
@article rees1998,title = High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber,journal = Conference Digest - IEEE International Semiconductor Laser Conference,year = 1998,pages = 145-146,author = Summers, H.D. and Molloy, C.H. and Smowton, P.M. and Rees, P. and Pierce, I. and Jones, D.R. |
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| College: |
Faculty of Science and Engineering |
| Start Page: |
145 |
| End Page: |
146 |