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High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber

H.D. Summers, C.H. Molloy, P.M. Smowton, P. Rees, I. Pierce, D.R. Jones, Paul Rees Orcid Logo, Huw Summers Orcid Logo

IEEE 16th International Semiconductor Laser Conference, Pages: 145 - 146

Swansea University Authors: Paul Rees Orcid Logo, Huw Summers Orcid Logo

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Published in: IEEE 16th International Semiconductor Laser Conference
ISBN: 0-7803-4223-2
ISSN: 0899-9406
Published: Nara, Japan IEEE 16th International Semiconductor Laser Conference 1998
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URI: https://cronfa.swan.ac.uk/Record/cronfa25603
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last_indexed 2019-10-14T13:36:26Z
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fullrecord <?xml version="1.0"?><rfc1807><datestamp>2019-10-14T11:37:42.2081291</datestamp><bib-version>v2</bib-version><id>25603</id><entry>2016-01-12</entry><title>High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber</title><swanseaauthors><author><sid>537a2fe031a796a3bde99679ee8c24f5</sid><ORCID>0000-0002-7715-6914</ORCID><firstname>Paul</firstname><surname>Rees</surname><name>Paul Rees</name><active>true</active><ethesisStudent>false</ethesisStudent></author><author><sid>a61c15e220837ebfa52648c143769427</sid><ORCID>0000-0002-0898-5612</ORCID><firstname>Huw</firstname><surname>Summers</surname><name>Huw Summers</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2016-01-12</date><deptcode>MEDE</deptcode><abstract/><type>Conference Paper/Proceeding/Abstract</type><journal>IEEE 16th International Semiconductor Laser Conference</journal><paginationStart>145</paginationStart><paginationEnd>146</paginationEnd><publisher>IEEE 16th International Semiconductor Laser Conference</publisher><placeOfPublication>Nara, Japan</placeOfPublication><isbnElectronic>0-7803-4223-2</isbnElectronic><issnPrint>0899-9406</issnPrint><keywords/><publishedDay>31</publishedDay><publishedMonth>10</publishedMonth><publishedYear>1998</publishedYear><publishedDate>1998-10-31</publishedDate><doi>10.1109/ISLC.1998.734178</doi><url>http://www.scopus.com/inward/record.url?eid=2-s2.0-0032320570&amp;amp;partnerID=MN8TOARS</url><notes>@article rees1998,title = High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber,journal = Conference Digest - IEEE International Semiconductor Laser Conference,year = 1998,pages = 145-146,author = Summers, H.D. and Molloy, C.H. and Smowton, P.M. and Rees, P. and Pierce, I. and Jones, D.R.</notes><college>COLLEGE NANME</college><department>Biomedical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>MEDE</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2019-10-14T11:37:42.2081291</lastEdited><Created>2016-01-12T17:12:22.8903799</Created><path><level id="1">College of Engineering</level><level id="2">Engineering</level></path><authors><author><firstname>H.D.</firstname><surname>Summers</surname><order>1</order></author><author><firstname>C.H.</firstname><surname>Molloy</surname><order>2</order></author><author><firstname>P.M.</firstname><surname>Smowton</surname><order>3</order></author><author><firstname>P.</firstname><surname>Rees</surname><order>4</order></author><author><firstname>I.</firstname><surname>Pierce</surname><order>5</order></author><author><firstname>D.R.</firstname><surname>Jones</surname><order>6</order></author><author><firstname>Paul</firstname><surname>Rees</surname><orcid>0000-0002-7715-6914</orcid><order>7</order></author><author><firstname>Huw</firstname><surname>Summers</surname><orcid>0000-0002-0898-5612</orcid><order>8</order></author></authors><documents/><OutputDurs/></rfc1807>
spelling 2019-10-14T11:37:42.2081291 v2 25603 2016-01-12 High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber 537a2fe031a796a3bde99679ee8c24f5 0000-0002-7715-6914 Paul Rees Paul Rees true false a61c15e220837ebfa52648c143769427 0000-0002-0898-5612 Huw Summers Huw Summers true false 2016-01-12 MEDE Conference Paper/Proceeding/Abstract IEEE 16th International Semiconductor Laser Conference 145 146 IEEE 16th International Semiconductor Laser Conference Nara, Japan 0-7803-4223-2 0899-9406 31 10 1998 1998-10-31 10.1109/ISLC.1998.734178 http://www.scopus.com/inward/record.url?eid=2-s2.0-0032320570&amp;partnerID=MN8TOARS @article rees1998,title = High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber,journal = Conference Digest - IEEE International Semiconductor Laser Conference,year = 1998,pages = 145-146,author = Summers, H.D. and Molloy, C.H. and Smowton, P.M. and Rees, P. and Pierce, I. and Jones, D.R. COLLEGE NANME Biomedical Engineering COLLEGE CODE MEDE Swansea University 2019-10-14T11:37:42.2081291 2016-01-12T17:12:22.8903799 College of Engineering Engineering H.D. Summers 1 C.H. Molloy 2 P.M. Smowton 3 P. Rees 4 I. Pierce 5 D.R. Jones 6 Paul Rees 0000-0002-7715-6914 7 Huw Summers 0000-0002-0898-5612 8
title High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber
spellingShingle High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber
Paul Rees
Huw Summers
title_short High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber
title_full High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber
title_fullStr High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber
title_full_unstemmed High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber
title_sort High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber
author_id_str_mv 537a2fe031a796a3bde99679ee8c24f5
a61c15e220837ebfa52648c143769427
author_id_fullname_str_mv 537a2fe031a796a3bde99679ee8c24f5_***_Paul Rees
a61c15e220837ebfa52648c143769427_***_Huw Summers
author Paul Rees
Huw Summers
author2 H.D. Summers
C.H. Molloy
P.M. Smowton
P. Rees
I. Pierce
D.R. Jones
Paul Rees
Huw Summers
format Conference Paper/Proceeding/Abstract
container_title IEEE 16th International Semiconductor Laser Conference
container_start_page 145
publishDate 1998
institution Swansea University
isbn 0-7803-4223-2
issn 0899-9406
doi_str_mv 10.1109/ISLC.1998.734178
publisher IEEE 16th International Semiconductor Laser Conference
college_str College of Engineering
hierarchytype
hierarchy_top_id collegeofengineering
hierarchy_top_title College of Engineering
hierarchy_parent_id collegeofengineering
hierarchy_parent_title College of Engineering
department_str Engineering{{{_:::_}}}College of Engineering{{{_:::_}}}Engineering
url http://www.scopus.com/inward/record.url?eid=2-s2.0-0032320570&amp;partnerID=MN8TOARS
document_store_str 0
active_str 0
published_date 1998-10-31T03:36:25Z
_version_ 1737025478508675072
score 10.8781185