Journal article 874 views
Gain characteristics of GaN quantum wells including many body effects
P. Rees,
C. Cooper,
P. Blood,
P.M. Smowton,
J. Hegarty,
Paul Rees 
Electronics Letters, Volume: 31, Issue: 14, Start page: 1149
Swansea University Author:
Paul Rees
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1049/el:19950826
Abstract
Gain characteristics of GaN quantum wells including many body effects
| Published in: | Electronics Letters |
|---|---|
| ISSN: | 00135194 |
| Published: |
1995
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| Online Access: |
Check full text
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa25621 |
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| Item Description: |
@article rees1995,title = Gain characteristics of GaN quantum wells including many body effects,journal = Electronics Letters,year = 1995,volume = 31,number = 14,pages = 1149-1150,author = Rees, P. and Cooper, C. and Blood, P. and Smowton, P.M. and Hegarty, J. |
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| College: |
Faculty of Science and Engineering |
| Issue: |
14 |
| Start Page: |
1149 |