Journal article 874 views
Gain characteristics of GaN quantum wells including many body effects
Electronics Letters, Volume: 31, Issue: 14, Start page: 1149
Swansea University Author: Paul Rees
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1049/el:19950826
Abstract
Gain characteristics of GaN quantum wells including many body effects
Published in: | Electronics Letters |
---|---|
ISSN: | 00135194 |
Published: |
1995
|
Online Access: |
Check full text
|
URI: | https://cronfa.swan.ac.uk/Record/cronfa25621 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
first_indexed |
2016-01-13T01:55:41Z |
---|---|
last_indexed |
2018-02-09T05:06:43Z |
id |
cronfa25621 |
recordtype |
SURis |
fullrecord |
<?xml version="1.0"?><rfc1807><datestamp>2016-01-12T17:12:32.3284404</datestamp><bib-version>v2</bib-version><id>25621</id><entry>2016-01-12</entry><title>Gain characteristics of GaN quantum wells including many body effects</title><swanseaauthors><author><sid>537a2fe031a796a3bde99679ee8c24f5</sid><ORCID>0000-0002-7715-6914</ORCID><firstname>Paul</firstname><surname>Rees</surname><name>Paul Rees</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2016-01-12</date><deptcode>MEDE</deptcode><abstract/><type>Journal Article</type><journal>Electronics Letters</journal><volume>31</volume><journalNumber>14</journalNumber><paginationStart>1149</paginationStart><publisher/><issnPrint>00135194</issnPrint><keywords/><publishedDay>31</publishedDay><publishedMonth>12</publishedMonth><publishedYear>1995</publishedYear><publishedDate>1995-12-31</publishedDate><doi>10.1049/el:19950826</doi><url>http://www.scopus.com/inward/record.url?eid=2-s2.0-0029637896&amp;partnerID=MN8TOARS</url><notes>@article rees1995,title = Gain characteristics of GaN quantum wells including many body effects,journal = Electronics Letters,year = 1995,volume = 31,number = 14,pages = 1149-1150,author = Rees, P. and Cooper, C. and Blood, P. and Smowton, P.M. and Hegarty, J.</notes><college>COLLEGE NANME</college><department>Biomedical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>MEDE</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2016-01-12T17:12:32.3284404</lastEdited><Created>2016-01-12T17:12:32.1256391</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Engineering and Applied Sciences - Biomedical Engineering</level></path><authors><author><firstname>P.</firstname><surname>Rees</surname><order>1</order></author><author><firstname>C.</firstname><surname>Cooper</surname><order>2</order></author><author><firstname>P.</firstname><surname>Blood</surname><order>3</order></author><author><firstname>P.M.</firstname><surname>Smowton</surname><order>4</order></author><author><firstname>J.</firstname><surname>Hegarty</surname><order>5</order></author><author><firstname>Paul</firstname><surname>Rees</surname><orcid>0000-0002-7715-6914</orcid><order>6</order></author></authors><documents/><OutputDurs/></rfc1807> |
spelling |
2016-01-12T17:12:32.3284404 v2 25621 2016-01-12 Gain characteristics of GaN quantum wells including many body effects 537a2fe031a796a3bde99679ee8c24f5 0000-0002-7715-6914 Paul Rees Paul Rees true false 2016-01-12 MEDE Journal Article Electronics Letters 31 14 1149 00135194 31 12 1995 1995-12-31 10.1049/el:19950826 http://www.scopus.com/inward/record.url?eid=2-s2.0-0029637896&partnerID=MN8TOARS @article rees1995,title = Gain characteristics of GaN quantum wells including many body effects,journal = Electronics Letters,year = 1995,volume = 31,number = 14,pages = 1149-1150,author = Rees, P. and Cooper, C. and Blood, P. and Smowton, P.M. and Hegarty, J. COLLEGE NANME Biomedical Engineering COLLEGE CODE MEDE Swansea University 2016-01-12T17:12:32.3284404 2016-01-12T17:12:32.1256391 Faculty of Science and Engineering School of Engineering and Applied Sciences - Biomedical Engineering P. Rees 1 C. Cooper 2 P. Blood 3 P.M. Smowton 4 J. Hegarty 5 Paul Rees 0000-0002-7715-6914 6 |
title |
Gain characteristics of GaN quantum wells including many body effects |
spellingShingle |
Gain characteristics of GaN quantum wells including many body effects Paul Rees |
title_short |
Gain characteristics of GaN quantum wells including many body effects |
title_full |
Gain characteristics of GaN quantum wells including many body effects |
title_fullStr |
Gain characteristics of GaN quantum wells including many body effects |
title_full_unstemmed |
Gain characteristics of GaN quantum wells including many body effects |
title_sort |
Gain characteristics of GaN quantum wells including many body effects |
author_id_str_mv |
537a2fe031a796a3bde99679ee8c24f5 |
author_id_fullname_str_mv |
537a2fe031a796a3bde99679ee8c24f5_***_Paul Rees |
author |
Paul Rees |
author2 |
P. Rees C. Cooper P. Blood P.M. Smowton J. Hegarty Paul Rees |
format |
Journal article |
container_title |
Electronics Letters |
container_volume |
31 |
container_issue |
14 |
container_start_page |
1149 |
publishDate |
1995 |
institution |
Swansea University |
issn |
00135194 |
doi_str_mv |
10.1049/el:19950826 |
college_str |
Faculty of Science and Engineering |
hierarchytype |
|
hierarchy_top_id |
facultyofscienceandengineering |
hierarchy_top_title |
Faculty of Science and Engineering |
hierarchy_parent_id |
facultyofscienceandengineering |
hierarchy_parent_title |
Faculty of Science and Engineering |
department_str |
School of Engineering and Applied Sciences - Biomedical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Biomedical Engineering |
url |
http://www.scopus.com/inward/record.url?eid=2-s2.0-0029637896&partnerID=MN8TOARS |
document_store_str |
0 |
active_str |
0 |
published_date |
1995-12-31T03:30:38Z |
_version_ |
1763751219591905280 |
score |
11.035634 |