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The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM

N. Sedghi, H. Li, I. F. Brunell, K. Dawson, R. J. Potter, Y. Guo, J. T. Gibbon, V. R. Dhanak, W. D. Zhang, J. F. Zhang, J. Robertson, S. Hall, P. R. Chalker, Yuzheng Guo Orcid Logo

Applied Physics Letters, Volume: 110, Issue: 10, Start page: 102902

Swansea University Author: Yuzheng Guo Orcid Logo

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DOI (Published version): 10.1063/1.4978033

Abstract

The role of nitrogen doping on the stability and memory window of resistive state switching in N-doped Ta2O5 deposited by atomic layer deposition is elucidated. Nitrogen incorporation increases the stability of resistive memory states which is attributed to neutralization of electronic defect levels...

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Published in: Applied Physics Letters
ISSN: 0003-6951 1077-3118
Published: 2017
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URI: https://cronfa.swan.ac.uk/Record/cronfa32459
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The density functional simulations with the screened exchange hybrid functional approximation show that the incorporation of nitrogen dopant atoms in the oxide network removes the O vacancy midgap defect states, thus nullifying excess defects and eliminating alternative conductive paths. By effectively reducing the density of vacancy-induced defect states through N doping, 3-bit multilevel cell switching is demonstrated, consisting of eight distinctive resistive memory states achieved by either controlling the set current compliance or the maximum voltage during reset. Nitrogen doping has a threefold effect: widening the switching memory window to accommodate the more intermediate states, improving the stability of states, and providing a gradual reset for multi-level cell switching during reset. The N-doped Ta2O5 devices have relatively small set and reset voltages (&lt;&#x2009;1&#x2009;V) with reduced variability due to doping.</abstract><type>Journal Article</type><journal>Applied Physics Letters</journal><volume>110</volume><journalNumber>10</journalNumber><paginationStart>102902</paginationStart><publisher/><issnPrint>0003-6951</issnPrint><issnElectronic>1077-3118</issnElectronic><keywords/><publishedDay>31</publishedDay><publishedMonth>12</publishedMonth><publishedYear>2017</publishedYear><publishedDate>2017-12-31</publishedDate><doi>10.1063/1.4978033</doi><url/><notes/><college>COLLEGE NANME</college><department>General Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>GENG</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2017-05-22T12:04:10.5665166</lastEdited><Created>2017-03-15T12:56:26.5598552</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering</level></path><authors><author><firstname>N.</firstname><surname>Sedghi</surname><order>1</order></author><author><firstname>H.</firstname><surname>Li</surname><order>2</order></author><author><firstname>I. 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R.</firstname><surname>Chalker</surname><order>13</order></author><author><firstname>Yuzheng</firstname><surname>Guo</surname><orcid>0000-0003-2656-0340</orcid><order>14</order></author></authors><documents><document><filename>0032459-07042017101811.pdf</filename><originalFilename>sedghi2017(2).pdf</originalFilename><uploaded>2017-04-07T10:18:11.3070000</uploaded><type>Output</type><contentLength>2486935</contentLength><contentType>application/pdf</contentType><version>Version of Record</version><cronfaStatus>true</cronfaStatus><embargoDate>2018-03-06T00:00:00.0000000</embargoDate><copyrightCorrect>true</copyrightCorrect><language>eng</language></document><document><filename>0032459-15032017162020.pdf</filename><originalFilename>sedghi2017.pdf</originalFilename><uploaded>2017-03-15T16:20:20.7870000</uploaded><type>Output</type><contentLength>1321655</contentLength><contentType>application/pdf</contentType><version>Accepted Manuscript</version><cronfaStatus>true</cronfaStatus><embargoDate>2017-03-15T00:00:00.0000000</embargoDate><copyrightCorrect>false</copyrightCorrect><language>eng</language></document></documents><OutputDurs/></rfc1807>
spelling 2017-05-22T12:04:10.5665166 v2 32459 2017-03-15 The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM 2c285ab01f88f7ecb25a3aacabee52ea 0000-0003-2656-0340 Yuzheng Guo Yuzheng Guo true false 2017-03-15 GENG The role of nitrogen doping on the stability and memory window of resistive state switching in N-doped Ta2O5 deposited by atomic layer deposition is elucidated. Nitrogen incorporation increases the stability of resistive memory states which is attributed to neutralization of electronic defect levels associated with oxygen vacancies. The density functional simulations with the screened exchange hybrid functional approximation show that the incorporation of nitrogen dopant atoms in the oxide network removes the O vacancy midgap defect states, thus nullifying excess defects and eliminating alternative conductive paths. By effectively reducing the density of vacancy-induced defect states through N doping, 3-bit multilevel cell switching is demonstrated, consisting of eight distinctive resistive memory states achieved by either controlling the set current compliance or the maximum voltage during reset. Nitrogen doping has a threefold effect: widening the switching memory window to accommodate the more intermediate states, improving the stability of states, and providing a gradual reset for multi-level cell switching during reset. The N-doped Ta2O5 devices have relatively small set and reset voltages (< 1 V) with reduced variability due to doping. Journal Article Applied Physics Letters 110 10 102902 0003-6951 1077-3118 31 12 2017 2017-12-31 10.1063/1.4978033 COLLEGE NANME General Engineering COLLEGE CODE GENG Swansea University 2017-05-22T12:04:10.5665166 2017-03-15T12:56:26.5598552 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering N. Sedghi 1 H. Li 2 I. F. Brunell 3 K. Dawson 4 R. J. Potter 5 Y. Guo 6 J. T. Gibbon 7 V. R. Dhanak 8 W. D. Zhang 9 J. F. Zhang 10 J. Robertson 11 S. Hall 12 P. R. Chalker 13 Yuzheng Guo 0000-0003-2656-0340 14 0032459-07042017101811.pdf sedghi2017(2).pdf 2017-04-07T10:18:11.3070000 Output 2486935 application/pdf Version of Record true 2018-03-06T00:00:00.0000000 true eng 0032459-15032017162020.pdf sedghi2017.pdf 2017-03-15T16:20:20.7870000 Output 1321655 application/pdf Accepted Manuscript true 2017-03-15T00:00:00.0000000 false eng
title The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM
spellingShingle The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM
Yuzheng Guo
title_short The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM
title_full The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM
title_fullStr The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM
title_full_unstemmed The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM
title_sort The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM
author_id_str_mv 2c285ab01f88f7ecb25a3aacabee52ea
author_id_fullname_str_mv 2c285ab01f88f7ecb25a3aacabee52ea_***_Yuzheng Guo
author Yuzheng Guo
author2 N. Sedghi
H. Li
I. F. Brunell
K. Dawson
R. J. Potter
Y. Guo
J. T. Gibbon
V. R. Dhanak
W. D. Zhang
J. F. Zhang
J. Robertson
S. Hall
P. R. Chalker
Yuzheng Guo
format Journal article
container_title Applied Physics Letters
container_volume 110
container_issue 10
container_start_page 102902
publishDate 2017
institution Swansea University
issn 0003-6951
1077-3118
doi_str_mv 10.1063/1.4978033
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering
document_store_str 1
active_str 0
description The role of nitrogen doping on the stability and memory window of resistive state switching in N-doped Ta2O5 deposited by atomic layer deposition is elucidated. Nitrogen incorporation increases the stability of resistive memory states which is attributed to neutralization of electronic defect levels associated with oxygen vacancies. The density functional simulations with the screened exchange hybrid functional approximation show that the incorporation of nitrogen dopant atoms in the oxide network removes the O vacancy midgap defect states, thus nullifying excess defects and eliminating alternative conductive paths. By effectively reducing the density of vacancy-induced defect states through N doping, 3-bit multilevel cell switching is demonstrated, consisting of eight distinctive resistive memory states achieved by either controlling the set current compliance or the maximum voltage during reset. Nitrogen doping has a threefold effect: widening the switching memory window to accommodate the more intermediate states, improving the stability of states, and providing a gradual reset for multi-level cell switching during reset. The N-doped Ta2O5 devices have relatively small set and reset voltages (< 1 V) with reduced variability due to doping.
published_date 2017-12-31T03:39:48Z
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score 11.012678

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