No Cover Image

Journal article 589 views

Effects of film thickness and thermal treatment on the structural and opto-electronic properties of Ga-doped ZnO films deposited by sol–gel method

Shuqun Chen, Michael Warwick Orcid Logo, Russell Binions

Solar Energy Materials and Solar Cells, Volume: 137, Pages: 202 - 209

Swansea University Author: Michael Warwick Orcid Logo

Full text not available from this repository: check for access using links below.

Check full text

DOI (Published version): 10.1016/j.solmat.2015.02.016

Abstract

In this work, Ga-doped ZnO (GZO) films were prepared using the sol–gel dip coating method and the effects of film thickness (230–480 nm), heating temperature (400–600 °C) and atmosphere (air/argon) on the system structural and opto-electronic performances were investigated. The results show that hig...

Full description

Published in: Solar Energy Materials and Solar Cells
ISSN: 0927-0248
Published: 2015
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa32762
Tags: Add Tag
No Tags, Be the first to tag this record!
Abstract: In this work, Ga-doped ZnO (GZO) films were prepared using the sol–gel dip coating method and the effects of film thickness (230–480 nm), heating temperature (400–600 °C) and atmosphere (air/argon) on the system structural and opto-electronic performances were investigated. The results show that highly c-axis oriented crystals could be easily formed in GZO coatings, which origins from a preferred nucleation and gets fully developed during the structure evolution. The increase of film thickness prolongs the sol–gel preheating process and promotes nucleation, resulting in a more crystalline film. Higher temperature annealing (600 °C) in air could degrade the Ga doping efficiency and decrease the carrier concentration, but the enlarged grain size helps enhance the carrier mobility and improve the film conductivity. Under the modified annealing process in argon, favorable carrier density (3.376×1019 cm−3) and mobility (15.74 cm2(V s)−1) can be obtained at the same time, resulting a minimum film resistivity of 1.18×10−2 Ω cm. The studied GZO coatings keep transparent in the visible and near infrared range, leading to high emissivity values (>0.738). We firstly prove that the carrier concentration could play a more dominant role than its mobility in determining the thermal emittance performance of thin films.
Keywords: Sol-gel; Ga-doped ZnO film; Thermal treatment; Emissivity
College: Faculty of Science and Engineering
Start Page: 202
End Page: 209

Similar Items