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Effects of film thickness and thermal treatment on the structural and opto-electronic properties of Ga-doped ZnO films deposited by sol–gel method

Shuqun Chen, Michael Warwick Orcid Logo, Russell Binions

Solar Energy Materials and Solar Cells, Volume: 137, Pages: 202 - 209

Swansea University Author: Michael Warwick Orcid Logo

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DOI (Published version): 10.1016/j.solmat.2015.02.016

Abstract

In this work, Ga-doped ZnO (GZO) films were prepared using the sol–gel dip coating method and the effects of film thickness (230–480 nm), heating temperature (400–600 °C) and atmosphere (air/argon) on the system structural and opto-electronic performances were investigated. The results show that hig...

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Published in: Solar Energy Materials and Solar Cells
ISSN: 0927-0248
Published: 2015
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URI: https://cronfa.swan.ac.uk/Record/cronfa32762
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spelling 2017-04-03T13:21:26.0514160 v2 32762 2017-03-29 Effects of film thickness and thermal treatment on the structural and opto-electronic properties of Ga-doped ZnO films deposited by sol–gel method 9fdabb7283ffccc5898cc543305475cf 0000-0002-9028-1250 Michael Warwick Michael Warwick true false 2017-03-29 FGSEN In this work, Ga-doped ZnO (GZO) films were prepared using the sol–gel dip coating method and the effects of film thickness (230–480 nm), heating temperature (400–600 °C) and atmosphere (air/argon) on the system structural and opto-electronic performances were investigated. The results show that highly c-axis oriented crystals could be easily formed in GZO coatings, which origins from a preferred nucleation and gets fully developed during the structure evolution. The increase of film thickness prolongs the sol–gel preheating process and promotes nucleation, resulting in a more crystalline film. Higher temperature annealing (600 °C) in air could degrade the Ga doping efficiency and decrease the carrier concentration, but the enlarged grain size helps enhance the carrier mobility and improve the film conductivity. Under the modified annealing process in argon, favorable carrier density (3.376×1019 cm−3) and mobility (15.74 cm2(V s)−1) can be obtained at the same time, resulting a minimum film resistivity of 1.18×10−2 Ω cm. The studied GZO coatings keep transparent in the visible and near infrared range, leading to high emissivity values (>0.738). We firstly prove that the carrier concentration could play a more dominant role than its mobility in determining the thermal emittance performance of thin films. Journal Article Solar Energy Materials and Solar Cells 137 202 209 0927-0248 Sol-gel; Ga-doped ZnO film; Thermal treatment; Emissivity 31 12 2015 2015-12-31 10.1016/j.solmat.2015.02.016 http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&amp;SrcAuth=ORCID&amp;SrcApp=OrcidOrg&amp;DestLinkType=FullRecord&amp;DestApp=WOS_CPL&amp;KeyUT=WOS:000352670800027&amp;KeyUID=WOS:000352670800027 COLLEGE NANME Science and Engineering - Faculty COLLEGE CODE FGSEN Swansea University 2017-04-03T13:21:26.0514160 2017-03-29T09:52:54.8322953 Faculty of Science and Engineering School of Engineering and Applied Sciences - Uncategorised Shuqun Chen 1 Michael Warwick 0000-0002-9028-1250 2 Russell Binions 3
title Effects of film thickness and thermal treatment on the structural and opto-electronic properties of Ga-doped ZnO films deposited by sol–gel method
spellingShingle Effects of film thickness and thermal treatment on the structural and opto-electronic properties of Ga-doped ZnO films deposited by sol–gel method
Michael Warwick
title_short Effects of film thickness and thermal treatment on the structural and opto-electronic properties of Ga-doped ZnO films deposited by sol–gel method
title_full Effects of film thickness and thermal treatment on the structural and opto-electronic properties of Ga-doped ZnO films deposited by sol–gel method
title_fullStr Effects of film thickness and thermal treatment on the structural and opto-electronic properties of Ga-doped ZnO films deposited by sol–gel method
title_full_unstemmed Effects of film thickness and thermal treatment on the structural and opto-electronic properties of Ga-doped ZnO films deposited by sol–gel method
title_sort Effects of film thickness and thermal treatment on the structural and opto-electronic properties of Ga-doped ZnO films deposited by sol–gel method
author_id_str_mv 9fdabb7283ffccc5898cc543305475cf
author_id_fullname_str_mv 9fdabb7283ffccc5898cc543305475cf_***_Michael Warwick
author Michael Warwick
author2 Shuqun Chen
Michael Warwick
Russell Binions
format Journal article
container_title Solar Energy Materials and Solar Cells
container_volume 137
container_start_page 202
publishDate 2015
institution Swansea University
issn 0927-0248
doi_str_mv 10.1016/j.solmat.2015.02.016
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Uncategorised{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Uncategorised
url http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&amp;SrcAuth=ORCID&amp;SrcApp=OrcidOrg&amp;DestLinkType=FullRecord&amp;DestApp=WOS_CPL&amp;KeyUT=WOS:000352670800027&amp;KeyUID=WOS:000352670800027
document_store_str 0
active_str 0
description In this work, Ga-doped ZnO (GZO) films were prepared using the sol–gel dip coating method and the effects of film thickness (230–480 nm), heating temperature (400–600 °C) and atmosphere (air/argon) on the system structural and opto-electronic performances were investigated. The results show that highly c-axis oriented crystals could be easily formed in GZO coatings, which origins from a preferred nucleation and gets fully developed during the structure evolution. The increase of film thickness prolongs the sol–gel preheating process and promotes nucleation, resulting in a more crystalline film. Higher temperature annealing (600 °C) in air could degrade the Ga doping efficiency and decrease the carrier concentration, but the enlarged grain size helps enhance the carrier mobility and improve the film conductivity. Under the modified annealing process in argon, favorable carrier density (3.376×1019 cm−3) and mobility (15.74 cm2(V s)−1) can be obtained at the same time, resulting a minimum film resistivity of 1.18×10−2 Ω cm. The studied GZO coatings keep transparent in the visible and near infrared range, leading to high emissivity values (>0.738). We firstly prove that the carrier concentration could play a more dominant role than its mobility in determining the thermal emittance performance of thin films.
published_date 2015-12-31T03:40:15Z
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score 11.012678

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