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Use of gas cluster ion source depth profiling to study the oxidation of fullerene thin films by XPS

James McGettrick Orcid Logo, Emily Speller, Zhe Li Orcid Logo, Wing C. Tsoi, James Durrant Orcid Logo, Trystan Watson Orcid Logo, Wing Chung Tsoi Orcid Logo

Organic Electronics, Volume: 49, Pages: 85 - 93

Swansea University Authors: James McGettrick Orcid Logo, Zhe Li Orcid Logo, James Durrant Orcid Logo, Trystan Watson Orcid Logo, Wing Chung Tsoi Orcid Logo

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DOI (Published version): 10.1016/j.orgel.2017.06.022

Abstract

The analysis of organic materials such as phenyl-C61-butyric acid methyl ester (PC61BM) by depth profiling is typically fraught with difficulty due to the fragile nature of the sample. In this work we utilise a gas cluster ion source for the controlled depth profiling of organic materials that would...

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Published in: Organic Electronics
ISSN: 15661199
Published: 2017
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa34259
first_indexed 2017-07-14T09:05:11Z
last_indexed 2018-02-09T05:24:10Z
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In this work we utilise a gas cluster ion source for the controlled depth profiling of organic materials that would historically have been too fragile to analyse and obtain quantitative compositional data through the whole thickness of the film. In particular we examine the oxygen diffusion and photo-oxidation kinetics of one of the most commonly used electron acceptor materials for many organic optoelectronic applications, namely PC61BM, in both neat films and in blends with polystyrene. Exposure to AM1.5G light and air under ambient conditions, results in a higher level of surface oxidation of blended PC61BM:polystyrene than is observed for either pure control film. Gas cluster ion source depth profiling further confirms that this oxidation is strongest at the extreme surface, but that over time elevated oxygen levels associated with oxidised organic species are observed to penetrate through the whole blended film. 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spelling 2017-08-14T10:51:31.4744365 v2 34259 2017-06-13 Use of gas cluster ion source depth profiling to study the oxidation of fullerene thin films by XPS bdbacc591e2de05180e0fd3cc13fa480 0000-0002-7719-2958 James McGettrick James McGettrick true false 56be57cc8dd661dfdbb921608cf93ded 0000-0002-7404-7448 Zhe Li Zhe Li true false f3dd64bc260e5c07adfa916c27dbd58a 0000-0001-8353-7345 James Durrant James Durrant true false a210327b52472cfe8df9b8108d661457 0000-0002-8015-1436 Trystan Watson Trystan Watson true false 7e5f541df6635a9a8e1a579ff2de5d56 0000-0003-3836-5139 Wing Chung Tsoi Wing Chung Tsoi true false 2017-06-13 EAAS The analysis of organic materials such as phenyl-C61-butyric acid methyl ester (PC61BM) by depth profiling is typically fraught with difficulty due to the fragile nature of the sample. In this work we utilise a gas cluster ion source for the controlled depth profiling of organic materials that would historically have been too fragile to analyse and obtain quantitative compositional data through the whole thickness of the film. In particular we examine the oxygen diffusion and photo-oxidation kinetics of one of the most commonly used electron acceptor materials for many organic optoelectronic applications, namely PC61BM, in both neat films and in blends with polystyrene. Exposure to AM1.5G light and air under ambient conditions, results in a higher level of surface oxidation of blended PC61BM:polystyrene than is observed for either pure control film. Gas cluster ion source depth profiling further confirms that this oxidation is strongest at the extreme surface, but that over time elevated oxygen levels associated with oxidised organic species are observed to penetrate through the whole blended film. The results presented herein provide further insights on the environmental stability of fullerene based organic optoelectronic devices. Journal Article Organic Electronics 49 85 93 15661199 OPV; PCBM; Degradation; XPS; GCIS 31 12 2017 2017-12-31 10.1016/j.orgel.2017.06.022 COLLEGE NANME Engineering and Applied Sciences School COLLEGE CODE EAAS Swansea University 2017-08-14T10:51:31.4744365 2017-06-13T09:00:40.1469991 Faculty of Science and Engineering School of Engineering and Applied Sciences - Materials Science and Engineering James McGettrick 0000-0002-7719-2958 1 Emily Speller 2 Zhe Li 0000-0002-7404-7448 3 Wing C. Tsoi 4 James Durrant 0000-0001-8353-7345 5 Trystan Watson 0000-0002-8015-1436 6 Wing Chung Tsoi 0000-0003-3836-5139 7 0034259-14062017125644.pdf mcgettrick2017(2)v3.pdf 2017-06-14T12:56:44.7100000 Output 3944854 application/pdf Accepted Manuscript true 2018-06-13T00:00:00.0000000 true eng
title Use of gas cluster ion source depth profiling to study the oxidation of fullerene thin films by XPS
spellingShingle Use of gas cluster ion source depth profiling to study the oxidation of fullerene thin films by XPS
James McGettrick
Zhe Li
James Durrant
Trystan Watson
Wing Chung Tsoi
title_short Use of gas cluster ion source depth profiling to study the oxidation of fullerene thin films by XPS
title_full Use of gas cluster ion source depth profiling to study the oxidation of fullerene thin films by XPS
title_fullStr Use of gas cluster ion source depth profiling to study the oxidation of fullerene thin films by XPS
title_full_unstemmed Use of gas cluster ion source depth profiling to study the oxidation of fullerene thin films by XPS
title_sort Use of gas cluster ion source depth profiling to study the oxidation of fullerene thin films by XPS
author_id_str_mv bdbacc591e2de05180e0fd3cc13fa480
56be57cc8dd661dfdbb921608cf93ded
f3dd64bc260e5c07adfa916c27dbd58a
a210327b52472cfe8df9b8108d661457
7e5f541df6635a9a8e1a579ff2de5d56
author_id_fullname_str_mv bdbacc591e2de05180e0fd3cc13fa480_***_James McGettrick
56be57cc8dd661dfdbb921608cf93ded_***_Zhe Li
f3dd64bc260e5c07adfa916c27dbd58a_***_James Durrant
a210327b52472cfe8df9b8108d661457_***_Trystan Watson
7e5f541df6635a9a8e1a579ff2de5d56_***_Wing Chung Tsoi
author James McGettrick
Zhe Li
James Durrant
Trystan Watson
Wing Chung Tsoi
author2 James McGettrick
Emily Speller
Zhe Li
Wing C. Tsoi
James Durrant
Trystan Watson
Wing Chung Tsoi
format Journal article
container_title Organic Electronics
container_volume 49
container_start_page 85
publishDate 2017
institution Swansea University
issn 15661199
doi_str_mv 10.1016/j.orgel.2017.06.022
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Materials Science and Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Materials Science and Engineering
document_store_str 1
active_str 0
description The analysis of organic materials such as phenyl-C61-butyric acid methyl ester (PC61BM) by depth profiling is typically fraught with difficulty due to the fragile nature of the sample. In this work we utilise a gas cluster ion source for the controlled depth profiling of organic materials that would historically have been too fragile to analyse and obtain quantitative compositional data through the whole thickness of the film. In particular we examine the oxygen diffusion and photo-oxidation kinetics of one of the most commonly used electron acceptor materials for many organic optoelectronic applications, namely PC61BM, in both neat films and in blends with polystyrene. Exposure to AM1.5G light and air under ambient conditions, results in a higher level of surface oxidation of blended PC61BM:polystyrene than is observed for either pure control film. Gas cluster ion source depth profiling further confirms that this oxidation is strongest at the extreme surface, but that over time elevated oxygen levels associated with oxidised organic species are observed to penetrate through the whole blended film. The results presented herein provide further insights on the environmental stability of fullerene based organic optoelectronic devices.
published_date 2017-12-31T04:21:05Z
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score 11.293348

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