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Proton irradiation of CdTe thin film photovoltaics deposited on cerium-doped space glass

Dan A. Lamb, Craig I. Underwood, Vincent Barrioz, Russell Gwilliam, James Hall, Mark A. Baker, Stuart Irvine Orcid Logo, Dan Lamb Orcid Logo

Progress in Photovoltaics: Research and Applications

Swansea University Authors: Stuart Irvine Orcid Logo, Dan Lamb Orcid Logo

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DOI (Published version): 10.1002/pip.2923

Abstract

Space photovoltaics is dominated by multi-junction (III-V) technology. However, emerging applications will require solar arrays with high specific power (kW/kg), flexibility in stowage and deployment, and a significantly lower cost than the current III-V technology offers. This research demonstrates...

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Published in: Progress in Photovoltaics: Research and Applications
ISSN: 1062-7995
Published: 2017
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URI: https://cronfa.swan.ac.uk/Record/cronfa34616
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spelling 2020-08-12T09:12:12.0179301 v2 34616 2017-07-12 Proton irradiation of CdTe thin film photovoltaics deposited on cerium-doped space glass 1ddb966eccef99aa96e87f1ea4917f1f 0000-0002-1652-4496 Stuart Irvine Stuart Irvine true false decd92a653848a357f0c6f8e38e0aea0 0000-0002-4762-4641 Dan Lamb Dan Lamb true false 2017-07-12 MTLS Space photovoltaics is dominated by multi-junction (III-V) technology. However, emerging applications will require solar arrays with high specific power (kW/kg), flexibility in stowage and deployment, and a significantly lower cost than the current III-V technology offers. This research demonstrates direct deposition of thin film CdTe onto the radiation-hard cover glass that is normally laminated to any solar cell deployed in space. Four CdTe samples, with 9 defined contact device areas of 0.25 cm2, were irradiated with protons of 0.5-MeV energy and varying fluences. At the lowest fluence, 1 × 1012 cm−2, the relative efficiency of the solar cells was 95%. Increasing the proton fluence to 1 × 1013 cm−2 and then 1 × 1014 cm−2 decreased the solar cell efficiency to 82% and 4%, respectively. At the fluence of 1 × 1013 cm−2, carrier concentration was reduced by an order of magnitude. Solar Cell Capacitance Simulator (SCAPS) modelling obtained a good fit from a reduction in shallow acceptor concentration with no change in the deep trap defect concentration. The more highly irradiated devices resulted in a buried junction characteristic of the external quantum efficiency, indicating further deterioration of the acceptor doping. This is explained by compensation from interstitial H+ formed by the proton absorption. An anneal of the 1 × 1014 cm−2 fluence devices gave an efficiency increase from 4% to 73% of the pre-irradiated levels, indicating that the compensation was reversible. CdTe with its rapid recovery through annealing demonstrates a radiation hardness to protons that is far superior to conventional multi-junction III-V solar cells. Journal Article Progress in Photovoltaics: Research and Applications 1062-7995 cadmium telluride; photovoltaic cells; proton radiation; space technology; thin film solar cells 31 12 2017 2017-12-31 10.1002/pip.2923 COLLEGE NANME Materials Science and Engineering COLLEGE CODE MTLS Swansea University 2020-08-12T09:12:12.0179301 2017-07-12T15:59:51.3931209 College of Engineering Engineering Dan A. Lamb 1 Craig I. Underwood 2 Vincent Barrioz 3 Russell Gwilliam 4 James Hall 5 Mark A. Baker 6 Stuart Irvine 0000-0002-1652-4496 7 Dan Lamb 0000-0002-4762-4641 8 0034616-04082017094955.pdf lamb2017.pdf 2017-08-04T09:49:55.2200000 Output 412241 application/pdf Version of Record true 2017-08-04T00:00:00.0000000 true eng
title Proton irradiation of CdTe thin film photovoltaics deposited on cerium-doped space glass
spellingShingle Proton irradiation of CdTe thin film photovoltaics deposited on cerium-doped space glass
Stuart, Irvine
Dan, Lamb
title_short Proton irradiation of CdTe thin film photovoltaics deposited on cerium-doped space glass
title_full Proton irradiation of CdTe thin film photovoltaics deposited on cerium-doped space glass
title_fullStr Proton irradiation of CdTe thin film photovoltaics deposited on cerium-doped space glass
title_full_unstemmed Proton irradiation of CdTe thin film photovoltaics deposited on cerium-doped space glass
title_sort Proton irradiation of CdTe thin film photovoltaics deposited on cerium-doped space glass
author_id_str_mv 1ddb966eccef99aa96e87f1ea4917f1f
decd92a653848a357f0c6f8e38e0aea0
author_id_fullname_str_mv 1ddb966eccef99aa96e87f1ea4917f1f_***_Stuart, Irvine_***_0000-0002-1652-4496
decd92a653848a357f0c6f8e38e0aea0_***_Dan, Lamb_***_0000-0002-4762-4641
author Stuart, Irvine
Dan, Lamb
author2 Dan A. Lamb
Craig I. Underwood
Vincent Barrioz
Russell Gwilliam
James Hall
Mark A. Baker
Stuart Irvine
Dan Lamb
format Journal article
container_title Progress in Photovoltaics: Research and Applications
publishDate 2017
institution Swansea University
issn 1062-7995
doi_str_mv 10.1002/pip.2923
college_str College of Engineering
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hierarchy_top_title College of Engineering
hierarchy_parent_id collegeofengineering
hierarchy_parent_title College of Engineering
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description Space photovoltaics is dominated by multi-junction (III-V) technology. However, emerging applications will require solar arrays with high specific power (kW/kg), flexibility in stowage and deployment, and a significantly lower cost than the current III-V technology offers. This research demonstrates direct deposition of thin film CdTe onto the radiation-hard cover glass that is normally laminated to any solar cell deployed in space. Four CdTe samples, with 9 defined contact device areas of 0.25 cm2, were irradiated with protons of 0.5-MeV energy and varying fluences. At the lowest fluence, 1 × 1012 cm−2, the relative efficiency of the solar cells was 95%. Increasing the proton fluence to 1 × 1013 cm−2 and then 1 × 1014 cm−2 decreased the solar cell efficiency to 82% and 4%, respectively. At the fluence of 1 × 1013 cm−2, carrier concentration was reduced by an order of magnitude. Solar Cell Capacitance Simulator (SCAPS) modelling obtained a good fit from a reduction in shallow acceptor concentration with no change in the deep trap defect concentration. The more highly irradiated devices resulted in a buried junction characteristic of the external quantum efficiency, indicating further deterioration of the acceptor doping. This is explained by compensation from interstitial H+ formed by the proton absorption. An anneal of the 1 × 1014 cm−2 fluence devices gave an efficiency increase from 4% to 73% of the pre-irradiated levels, indicating that the compensation was reversible. CdTe with its rapid recovery through annealing demonstrates a radiation hardness to protons that is far superior to conventional multi-junction III-V solar cells.
published_date 2017-12-31T03:54:53Z
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