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Proton irradiation of CdTe thin film photovoltaics deposited on cerium-doped space glass

Dan A. Lamb, Craig I. Underwood, Vincent Barrioz, Russell Gwilliam, James Hall, Mark A. Baker, Stuart Irvine Orcid Logo, Dan Lamb Orcid Logo

Progress in Photovoltaics: Research and Applications

Swansea University Authors: Stuart Irvine Orcid Logo, Dan Lamb Orcid Logo

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DOI (Published version): 10.1002/pip.2923

Abstract

Space photovoltaics is dominated by multi-junction (III-V) technology. However, emerging applications will require solar arrays with high specific power (kW/kg), flexibility in stowage and deployment, and a significantly lower cost than the current III-V technology offers. This research demonstrates...

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Published in: Progress in Photovoltaics: Research and Applications
ISSN: 1062-7995
Published: 2017
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URI: https://cronfa.swan.ac.uk/Record/cronfa34616
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spelling 2020-08-12T09:12:12.0179301 v2 34616 2017-07-12 Proton irradiation of CdTe thin film photovoltaics deposited on cerium-doped space glass 1ddb966eccef99aa96e87f1ea4917f1f 0000-0002-1652-4496 Stuart Irvine Stuart Irvine true false decd92a653848a357f0c6f8e38e0aea0 0000-0002-4762-4641 Dan Lamb Dan Lamb true false 2017-07-12 MTLS Space photovoltaics is dominated by multi-junction (III-V) technology. However, emerging applications will require solar arrays with high specific power (kW/kg), flexibility in stowage and deployment, and a significantly lower cost than the current III-V technology offers. This research demonstrates direct deposition of thin film CdTe onto the radiation-hard cover glass that is normally laminated to any solar cell deployed in space. Four CdTe samples, with 9 defined contact device areas of 0.25 cm2, were irradiated with protons of 0.5-MeV energy and varying fluences. At the lowest fluence, 1 × 1012 cm−2, the relative efficiency of the solar cells was 95%. Increasing the proton fluence to 1 × 1013 cm−2 and then 1 × 1014 cm−2 decreased the solar cell efficiency to 82% and 4%, respectively. At the fluence of 1 × 1013 cm−2, carrier concentration was reduced by an order of magnitude. Solar Cell Capacitance Simulator (SCAPS) modelling obtained a good fit from a reduction in shallow acceptor concentration with no change in the deep trap defect concentration. The more highly irradiated devices resulted in a buried junction characteristic of the external quantum efficiency, indicating further deterioration of the acceptor doping. This is explained by compensation from interstitial H+ formed by the proton absorption. An anneal of the 1 × 1014 cm−2 fluence devices gave an efficiency increase from 4% to 73% of the pre-irradiated levels, indicating that the compensation was reversible. CdTe with its rapid recovery through annealing demonstrates a radiation hardness to protons that is far superior to conventional multi-junction III-V solar cells. Journal Article Progress in Photovoltaics: Research and Applications 1062-7995 cadmium telluride; photovoltaic cells; proton radiation; space technology; thin film solar cells 31 12 2017 2017-12-31 10.1002/pip.2923 COLLEGE NANME Materials Science and Engineering COLLEGE CODE MTLS Swansea University 2020-08-12T09:12:12.0179301 2017-07-12T15:59:51.3931209 Faculty of Science and Engineering School of Engineering and Applied Sciences - Materials Science and Engineering Dan A. Lamb 1 Craig I. Underwood 2 Vincent Barrioz 3 Russell Gwilliam 4 James Hall 5 Mark A. Baker 6 Stuart Irvine 0000-0002-1652-4496 7 Dan Lamb 0000-0002-4762-4641 8 0034616-04082017094955.pdf lamb2017.pdf 2017-08-04T09:49:55.2200000 Output 412241 application/pdf Version of Record true 2017-08-04T00:00:00.0000000 true eng
title Proton irradiation of CdTe thin film photovoltaics deposited on cerium-doped space glass
spellingShingle Proton irradiation of CdTe thin film photovoltaics deposited on cerium-doped space glass
Stuart Irvine
Dan Lamb
title_short Proton irradiation of CdTe thin film photovoltaics deposited on cerium-doped space glass
title_full Proton irradiation of CdTe thin film photovoltaics deposited on cerium-doped space glass
title_fullStr Proton irradiation of CdTe thin film photovoltaics deposited on cerium-doped space glass
title_full_unstemmed Proton irradiation of CdTe thin film photovoltaics deposited on cerium-doped space glass
title_sort Proton irradiation of CdTe thin film photovoltaics deposited on cerium-doped space glass
author_id_str_mv 1ddb966eccef99aa96e87f1ea4917f1f
decd92a653848a357f0c6f8e38e0aea0
author_id_fullname_str_mv 1ddb966eccef99aa96e87f1ea4917f1f_***_Stuart Irvine
decd92a653848a357f0c6f8e38e0aea0_***_Dan Lamb
author Stuart Irvine
Dan Lamb
author2 Dan A. Lamb
Craig I. Underwood
Vincent Barrioz
Russell Gwilliam
James Hall
Mark A. Baker
Stuart Irvine
Dan Lamb
format Journal article
container_title Progress in Photovoltaics: Research and Applications
publishDate 2017
institution Swansea University
issn 1062-7995
doi_str_mv 10.1002/pip.2923
college_str Faculty of Science and Engineering
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hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Materials Science and Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Materials Science and Engineering
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description Space photovoltaics is dominated by multi-junction (III-V) technology. However, emerging applications will require solar arrays with high specific power (kW/kg), flexibility in stowage and deployment, and a significantly lower cost than the current III-V technology offers. This research demonstrates direct deposition of thin film CdTe onto the radiation-hard cover glass that is normally laminated to any solar cell deployed in space. Four CdTe samples, with 9 defined contact device areas of 0.25 cm2, were irradiated with protons of 0.5-MeV energy and varying fluences. At the lowest fluence, 1 × 1012 cm−2, the relative efficiency of the solar cells was 95%. Increasing the proton fluence to 1 × 1013 cm−2 and then 1 × 1014 cm−2 decreased the solar cell efficiency to 82% and 4%, respectively. At the fluence of 1 × 1013 cm−2, carrier concentration was reduced by an order of magnitude. Solar Cell Capacitance Simulator (SCAPS) modelling obtained a good fit from a reduction in shallow acceptor concentration with no change in the deep trap defect concentration. The more highly irradiated devices resulted in a buried junction characteristic of the external quantum efficiency, indicating further deterioration of the acceptor doping. This is explained by compensation from interstitial H+ formed by the proton absorption. An anneal of the 1 × 1014 cm−2 fluence devices gave an efficiency increase from 4% to 73% of the pre-irradiated levels, indicating that the compensation was reversible. CdTe with its rapid recovery through annealing demonstrates a radiation hardness to protons that is far superior to conventional multi-junction III-V solar cells.
published_date 2017-12-31T03:42:57Z
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