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Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping

N. Sedghi, H. Li, I. F. Brunell, K. Dawson, Y. Guo, R. J. Potter, J. T. Gibbon, V. R. Dhanak, W. D. Zhang, J. F. Zhang, S. Hall, J. Robertson, P. R. Chalker, Yuzheng Guo Orcid Logo

Applied Physics Letters, Volume: 111, Issue: 9, Start page: 092904

Swansea University Author: Yuzheng Guo Orcid Logo

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DOI (Published version): 10.1063/1.4991879

Abstract

The effect of fluorine doping on the switching stability of Ta2O5 resistive random access memory devices is investigated. It shows that the dopant serves to increase the memory window and improve the stability of the resistive states due to the neutralization of oxygen vacancies. The ability to alte...

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Published in: Applied Physics Letters
ISSN: 0003-6951 1077-3118
Published: 2017
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URI: https://cronfa.swan.ac.uk/Record/cronfa35310
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spelling 2017-09-18T12:03:01.4414091 v2 35310 2017-09-18 Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping 2c285ab01f88f7ecb25a3aacabee52ea 0000-0003-2656-0340 Yuzheng Guo Yuzheng Guo true false 2017-09-18 GENG The effect of fluorine doping on the switching stability of Ta2O5 resistive random access memory devices is investigated. It shows that the dopant serves to increase the memory window and improve the stability of the resistive states due to the neutralization of oxygen vacancies. The ability to alter the current in the low resistance state with set current compliance coupled with large memory window makes multilevel cell switching more favorable. The devices have set and reset voltages of <1 V with improved stability due to the fluorine doping. Density functional modeling shows that the incorporation of fluorine dopant atoms at the two-fold O vacancy site in the oxide network removes the defect state in the mid bandgap, lowering the overall density of defects capable of forming conductive filaments. This reduces the probability of forming alternative conducting paths and hence improves the current stability in the low resistance states. The doped devices exhibit more stable resistive states in both dc and pulsed set and reset cycles. The retention failure time is estimated to be a minimum of 2 years for F-doped devices measured by temperature accelerated and stress voltage accelerated retention failure methods. Journal Article Applied Physics Letters 111 9 092904 0003-6951 1077-3118 Crystal defects, Dielectrics, Band gap, Density functional theory, Probability theory 31 12 2017 2017-12-31 10.1063/1.4991879 COLLEGE NANME General Engineering COLLEGE CODE GENG Swansea University 2017-09-18T12:03:01.4414091 2017-09-18T11:59:33.3493811 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering N. Sedghi 1 H. Li 2 I. F. Brunell 3 K. Dawson 4 Y. Guo 5 R. J. Potter 6 J. T. Gibbon 7 V. R. Dhanak 8 W. D. Zhang 9 J. F. Zhang 10 S. Hall 11 J. Robertson 12 P. R. Chalker 13 Yuzheng Guo 0000-0003-2656-0340 14 0035310-18092017120246.pdf sedghi2017(3).pdf 2017-09-18T12:02:46.8400000 Output 2362421 application/pdf Version of Record true 2017-09-18T00:00:00.0000000 false eng
title Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping
spellingShingle Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping
Yuzheng Guo
title_short Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping
title_full Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping
title_fullStr Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping
title_full_unstemmed Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping
title_sort Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping
author_id_str_mv 2c285ab01f88f7ecb25a3aacabee52ea
author_id_fullname_str_mv 2c285ab01f88f7ecb25a3aacabee52ea_***_Yuzheng Guo
author Yuzheng Guo
author2 N. Sedghi
H. Li
I. F. Brunell
K. Dawson
Y. Guo
R. J. Potter
J. T. Gibbon
V. R. Dhanak
W. D. Zhang
J. F. Zhang
S. Hall
J. Robertson
P. R. Chalker
Yuzheng Guo
format Journal article
container_title Applied Physics Letters
container_volume 111
container_issue 9
container_start_page 092904
publishDate 2017
institution Swansea University
issn 0003-6951
1077-3118
doi_str_mv 10.1063/1.4991879
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering
document_store_str 1
active_str 0
description The effect of fluorine doping on the switching stability of Ta2O5 resistive random access memory devices is investigated. It shows that the dopant serves to increase the memory window and improve the stability of the resistive states due to the neutralization of oxygen vacancies. The ability to alter the current in the low resistance state with set current compliance coupled with large memory window makes multilevel cell switching more favorable. The devices have set and reset voltages of <1 V with improved stability due to the fluorine doping. Density functional modeling shows that the incorporation of fluorine dopant atoms at the two-fold O vacancy site in the oxide network removes the defect state in the mid bandgap, lowering the overall density of defects capable of forming conductive filaments. This reduces the probability of forming alternative conducting paths and hence improves the current stability in the low resistance states. The doped devices exhibit more stable resistive states in both dc and pulsed set and reset cycles. The retention failure time is estimated to be a minimum of 2 years for F-doped devices measured by temperature accelerated and stress voltage accelerated retention failure methods.
published_date 2017-12-31T03:43:53Z
_version_ 1763752053566341120
score 11.012678

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