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Role of Self-Heating and Polarization in AlGaN/GaN Based Heterostructures

K. Ahmeda, B. Ubochi, B. Benbakhti, S. J. Duffy, A. Soltani, W. Zhang, Karol Kalna Orcid Logo

IEEE Access, Volume: 5, Issue: October, Pages: 20946 - 20952

Swansea University Author: Karol Kalna Orcid Logo

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DOI (Published version): 10.1109/ACCESS.2017.2755984

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Abstract:The interplay of self-heating and polarization affecting resistance is studied in AlGaN/GaN Transmission Line Model (TLM) heterostructures with a scaled source-to-drain distance. The study is based on meticulously calibrated TCAD simulations against I-V experimental data using an electrothe...

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Published in: IEEE Access
ISSN: 2169-3536
Published: New York IEEE 2017
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URI: https://cronfa.swan.ac.uk/Record/cronfa36147
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first_indexed 2017-10-18T13:16:09Z
last_indexed 2023-01-11T14:10:59Z
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spelling 2022-10-10T15:49:15.1090914 v2 36147 2017-10-18 Role of Self-Heating and Polarization in AlGaN/GaN Based Heterostructures 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2017-10-18 EEEG Abstract:The interplay of self-heating and polarization affecting resistance is studied in AlGaN/GaN Transmission Line Model (TLM) heterostructures with a scaled source-to-drain distance. The study is based on meticulously calibrated TCAD simulations against I-V experimental data using an electrothermal model. The electro-thermal simulations show hot-spots (with peak temperature in a range of ~ 566 K - 373 K) at the edge of the drain contact due to a large electric field. The electrical stress on Ohmic contacts reduces the total polarization, leading to the inverse/converse piezoelectric effect. This inverse effect decreases the polarization by 7 %, 10 %, and 17 % during a scaling of the source-to-drain distance in the 12 μm, 8μm and 4 μm TLM heterostructures, respectively, when compared to the largest 18 μm heterostructure. Journal Article IEEE Access 5 October 20946 20952 IEEE New York 2169-3536 III-V Nitrides, Self-Heating, Polarization, TLM Structures, Electro-Thermal Transport Simulations 31 12 2017 2017-12-31 10.1109/ACCESS.2017.2755984 https://ieeexplore.ieee.org/document/8055440 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2022-10-10T15:49:15.1090914 2017-10-18T09:34:17.0303676 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering K. Ahmeda 1 B. Ubochi 2 B. Benbakhti 3 S. J. Duffy 4 A. Soltani 5 W. Zhang 6 Karol Kalna 0000-0002-6333-9189 7 0036147-18102017093806.pdf ahmed2017(2).pdf 2017-10-18T09:38:06.8370000 Output 871147 application/pdf Version of Record true 2017-10-18T00:00:00.0000000 true eng
title Role of Self-Heating and Polarization in AlGaN/GaN Based Heterostructures
spellingShingle Role of Self-Heating and Polarization in AlGaN/GaN Based Heterostructures
Karol Kalna
title_short Role of Self-Heating and Polarization in AlGaN/GaN Based Heterostructures
title_full Role of Self-Heating and Polarization in AlGaN/GaN Based Heterostructures
title_fullStr Role of Self-Heating and Polarization in AlGaN/GaN Based Heterostructures
title_full_unstemmed Role of Self-Heating and Polarization in AlGaN/GaN Based Heterostructures
title_sort Role of Self-Heating and Polarization in AlGaN/GaN Based Heterostructures
author_id_str_mv 1329a42020e44fdd13de2f20d5143253
author_id_fullname_str_mv 1329a42020e44fdd13de2f20d5143253_***_Karol Kalna
author Karol Kalna
author2 K. Ahmeda
B. Ubochi
B. Benbakhti
S. J. Duffy
A. Soltani
W. Zhang
Karol Kalna
format Journal article
container_title IEEE Access
container_volume 5
container_issue October
container_start_page 20946
publishDate 2017
institution Swansea University
issn 2169-3536
doi_str_mv 10.1109/ACCESS.2017.2755984
publisher IEEE
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
url https://ieeexplore.ieee.org/document/8055440
document_store_str 1
active_str 0
description Abstract:The interplay of self-heating and polarization affecting resistance is studied in AlGaN/GaN Transmission Line Model (TLM) heterostructures with a scaled source-to-drain distance. The study is based on meticulously calibrated TCAD simulations against I-V experimental data using an electrothermal model. The electro-thermal simulations show hot-spots (with peak temperature in a range of ~ 566 K - 373 K) at the edge of the drain contact due to a large electric field. The electrical stress on Ohmic contacts reduces the total polarization, leading to the inverse/converse piezoelectric effect. This inverse effect decreases the polarization by 7 %, 10 %, and 17 % during a scaling of the source-to-drain distance in the 12 μm, 8μm and 4 μm TLM heterostructures, respectively, when compared to the largest 18 μm heterostructure.
published_date 2017-12-31T03:45:08Z
_version_ 1763752132016603136
score 11.035634

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