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A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs

S. J. Duffy, B. Benbakhti, W. Zhang, K. Ahmeda, Karol Kalna Orcid Logo, M. Boucherta, M. Mattalah, H. O. Chahdi, N. E. Bourzgui, A. Soltani

IEEE Transactions on Electron Devices, Volume: 67, Issue: 5, Pages: 1924 - 1930

Swansea University Author: Karol Kalna Orcid Logo

Abstract

A new parametric and cost-effective technique is developed to decouple the mechanisms behind current degradation in AlGaN/GaN HEMTs under a normal device operation: self-heating and charge trapping. A unique approach that investigates charge trapping using both source (I_S) and drain (I_D) transient...

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Published in: IEEE Transactions on Electron Devices
ISSN: 0018-9383 1557-9646
Published: Institute of Electrical and Electronics Engineers (IEEE) 2020
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa54035
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Abstract: A new parametric and cost-effective technique is developed to decouple the mechanisms behind current degradation in AlGaN/GaN HEMTs under a normal device operation: self-heating and charge trapping. A unique approach that investigates charge trapping using both source (I_S) and drain (I_D) transient currents for the first time. Two types of charge trapping mechanisms are identified: (i) bulk charge trapping occurring on a time scale of less than 1 ms, followed by (ii) surface charge trapping with a time constant larger than a millisecond. Through monitoring the difference between I_S and I_D, a bulk charge trapping time constant is found to be independent of both drain (V_DS) and gate (V_GS) biases. Surface charge trapping is found to have a much greater impact on a slow degradation when compared to bulk trapping and self-heating. At a short timescale (<1 ms), the RF performance is mainly restricted by both bulk charge trapping and self-heating effects. However, at a longer time (>1 ms), the dynamic ON resistance degradation is predominantly limited by surface charge trapping.
College: College of Engineering
Issue: 5
Start Page: 1924
End Page: 1930