Stability of Schottky and Ohmic Au Nanocatalysts to ZnO Nanowires

Lord, Alex; Ramasse, Quentin M.; Kepaptsoglou, Despoina M.; Periwal, Priyanka; Ross, Frances M.; Wilks, Steve

doi:10.1021/acs.nanolett.7b02561

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Stability of Schottky and Ohmic Au Nanocatalysts to ZnO Nanowires

Alex Lord

, Quentin M. Ramasse, Despoina M. Kepaptsoglou, Priyanka Periwal, Frances M. Ross, Steve Wilks

Nano Letters, Volume: 17, Issue: 11, Pages: 6626 - 6636

Swansea University Authors: Alex Lord , Steve Wilks

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DOI (Published version): 10.1021/acs.nanolett.7b02561

Abstract

Manufacturable nanodevices must now be the predominant goal of nanotechnological research to ensure the enhanced properties of nanomaterials can be fully exploited and fulfill the promise that fundamental science has exposed. Here, we test the electrical stability of Au nanocatalyst–ZnO nanowire con...

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Published in:	Nano Letters
ISSN:	1530-6984 1530-6992
Published:	Nano Letters American Chemical Society (ACS) 2017
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Here, we test the electrical stability of Au nanocatalyst–ZnO nanowire contacts to determine the limits of the electrical transport properties and the metal–semiconductor interfaces. While the transport properties of as-grown Au nanocatalyst contacts to ZnO nanowires have been well-defined, the stability of the interfaces over lengthy time periods and the electrical limits of the ohmic or Schottky function have not been studied. In this work, we use a recently developed iterative analytical process that directly correlates multiprobe transport measurements with subsequent aberration-corrected scanning transmission electron microscopy to study the electrical, structural, and chemical properties when the nanowires are pushed to their electrical limits and show structural changes occur at the metal–nanowire interface or at the nanowire midshaft. The ohmic contacts exhibit enhanced quantum-mechanical edge-tunneling transport behavior because of additional native semiconductor material at the contact edge due to a strong metal–support interaction. The low-resistance nature of the ohmic contacts leads to catastrophic breakdown at the middle of the nanowire span where the maximum heating effect occurs. Schottky-type Au–nanowire contacts are observed when the nanowires are in the as-grown pristine state and display entirely different breakdown characteristics. The higher-resistance rectifying I–V behavior degrades as the current is increased which leads to a permanent weakening of the rectifying effect and atomic-scale structural changes at the edge of the Au interface where the tunneling current is concentrated. Furthermore, to study modified nanowires such as might be used in devices the nanoscale tunneling path at the interface edge of the ohmic nanowire contacts is removed with a simple etch treatment and the nanowires show similar I–V characteristics during breakdown as the Schottky pristine contacts. Breakdown is shown to occur either at the nanowire midshaft or at the Au contact depending on the initial conductivity of the Au contact interface. 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spelling	2020-09-29T15:30:29.7728485 v2 36175 2017-10-19 Stability of Schottky and Ohmic Au Nanocatalysts to ZnO Nanowires d547bad707e12f5a9f12d4fcbeea87ed 0000-0002-6258-2187 Alex Lord Alex Lord true false 948a547e27d969b7e192b4620688704d Steve Wilks Steve Wilks true false 2017-10-19 EEN Manufacturable nanodevices must now be the predominant goal of nanotechnological research to ensure the enhanced properties of nanomaterials can be fully exploited and fulfill the promise that fundamental science has exposed. Here, we test the electrical stability of Au nanocatalyst–ZnO nanowire contacts to determine the limits of the electrical transport properties and the metal–semiconductor interfaces. While the transport properties of as-grown Au nanocatalyst contacts to ZnO nanowires have been well-defined, the stability of the interfaces over lengthy time periods and the electrical limits of the ohmic or Schottky function have not been studied. In this work, we use a recently developed iterative analytical process that directly correlates multiprobe transport measurements with subsequent aberration-corrected scanning transmission electron microscopy to study the electrical, structural, and chemical properties when the nanowires are pushed to their electrical limits and show structural changes occur at the metal–nanowire interface or at the nanowire midshaft. The ohmic contacts exhibit enhanced quantum-mechanical edge-tunneling transport behavior because of additional native semiconductor material at the contact edge due to a strong metal–support interaction. The low-resistance nature of the ohmic contacts leads to catastrophic breakdown at the middle of the nanowire span where the maximum heating effect occurs. Schottky-type Au–nanowire contacts are observed when the nanowires are in the as-grown pristine state and display entirely different breakdown characteristics. The higher-resistance rectifying I–V behavior degrades as the current is increased which leads to a permanent weakening of the rectifying effect and atomic-scale structural changes at the edge of the Au interface where the tunneling current is concentrated. Furthermore, to study modified nanowires such as might be used in devices the nanoscale tunneling path at the interface edge of the ohmic nanowire contacts is removed with a simple etch treatment and the nanowires show similar I–V characteristics during breakdown as the Schottky pristine contacts. Breakdown is shown to occur either at the nanowire midshaft or at the Au contact depending on the initial conductivity of the Au contact interface. These results demonstrate the Au–nanowire structures are capable of withstanding long periods of electrical stress and are stable at high current densities ensuring they are ideal components for nanowire-device designs while providing the flexibility of choosing the electrical transport properties which other Au–nanowire systems cannot presently deliver. Journal Article Nano Letters 17 11 6626 6636 American Chemical Society (ACS) Nano Letters 1530-6984 1530-6992 aberration-corrected scanning transmission electron microscopy; barrier inhomogeneity; electrical breakdown; electrical contacts; interfacial atomic defects; Nanowires; tunneling edge effect; ZnO 8 11 2017 2017-11-08 10.1021/acs.nanolett.7b02561 COLLEGE NANME Engineering COLLEGE CODE EEN Swansea University EPSRC, RCUK, EP/K504002/1 2020-09-29T15:30:29.7728485 2017-10-19T12:06:43.9453405 Faculty of Science and Engineering School of Engineering and Applied Sciences - Uncategorised Alex Lord 0000-0002-6258-2187 1 Quentin M. Ramasse 2 Despoina M. Kepaptsoglou 3 Priyanka Periwal 4 Frances M. Ross 5 Steve Wilks 6 0036175-12012018164400.pdf APCCD69CR.pdf 2018-01-12T16:44:00.0870000 Output 4429225 application/pdf Version of Record true Released under the terms of a Creative Commons Attribution License (CC-BY). true eng http://pubs.acs.org/page/policy/authorchoice_ccby_termsofuse.html
title	Stability of Schottky and Ohmic Au Nanocatalysts to ZnO Nanowires
spellingShingle	Stability of Schottky and Ohmic Au Nanocatalysts to ZnO Nanowires Alex Lord Steve Wilks
title_short	Stability of Schottky and Ohmic Au Nanocatalysts to ZnO Nanowires
title_full	Stability of Schottky and Ohmic Au Nanocatalysts to ZnO Nanowires
title_fullStr	Stability of Schottky and Ohmic Au Nanocatalysts to ZnO Nanowires
title_full_unstemmed	Stability of Schottky and Ohmic Au Nanocatalysts to ZnO Nanowires
title_sort	Stability of Schottky and Ohmic Au Nanocatalysts to ZnO Nanowires
author_id_str_mv	d547bad707e12f5a9f12d4fcbeea87ed 948a547e27d969b7e192b4620688704d
author_id_fullname_str_mv	d547bad707e12f5a9f12d4fcbeea87ed_*_Alex Lord 948a547e27d969b7e192b4620688704d_*_Steve Wilks
author	Alex Lord Steve Wilks
author2	Alex Lord Quentin M. Ramasse Despoina M. Kepaptsoglou Priyanka Periwal Frances M. Ross Steve Wilks
format	Journal article
container_title	Nano Letters
container_volume	17
container_issue	11
container_start_page	6626
publishDate	2017
institution	Swansea University
issn	1530-6984 1530-6992
doi_str_mv	10.1021/acs.nanolett.7b02561
publisher	American Chemical Society (ACS)
college_str	Faculty of Science and Engineering
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hierarchy_top_title	Faculty of Science and Engineering
hierarchy_parent_id	facultyofscienceandengineering
hierarchy_parent_title	Faculty of Science and Engineering
department_str	School of Engineering and Applied Sciences - Uncategorised{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Uncategorised
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description	Manufacturable nanodevices must now be the predominant goal of nanotechnological research to ensure the enhanced properties of nanomaterials can be fully exploited and fulfill the promise that fundamental science has exposed. Here, we test the electrical stability of Au nanocatalyst–ZnO nanowire contacts to determine the limits of the electrical transport properties and the metal–semiconductor interfaces. While the transport properties of as-grown Au nanocatalyst contacts to ZnO nanowires have been well-defined, the stability of the interfaces over lengthy time periods and the electrical limits of the ohmic or Schottky function have not been studied. In this work, we use a recently developed iterative analytical process that directly correlates multiprobe transport measurements with subsequent aberration-corrected scanning transmission electron microscopy to study the electrical, structural, and chemical properties when the nanowires are pushed to their electrical limits and show structural changes occur at the metal–nanowire interface or at the nanowire midshaft. The ohmic contacts exhibit enhanced quantum-mechanical edge-tunneling transport behavior because of additional native semiconductor material at the contact edge due to a strong metal–support interaction. The low-resistance nature of the ohmic contacts leads to catastrophic breakdown at the middle of the nanowire span where the maximum heating effect occurs. Schottky-type Au–nanowire contacts are observed when the nanowires are in the as-grown pristine state and display entirely different breakdown characteristics. The higher-resistance rectifying I–V behavior degrades as the current is increased which leads to a permanent weakening of the rectifying effect and atomic-scale structural changes at the edge of the Au interface where the tunneling current is concentrated. Furthermore, to study modified nanowires such as might be used in devices the nanoscale tunneling path at the interface edge of the ohmic nanowire contacts is removed with a simple etch treatment and the nanowires show similar I–V characteristics during breakdown as the Schottky pristine contacts. Breakdown is shown to occur either at the nanowire midshaft or at the Au contact depending on the initial conductivity of the Au contact interface. These results demonstrate the Au–nanowire structures are capable of withstanding long periods of electrical stress and are stable at high current densities ensuring they are ideal components for nanowire-device designs while providing the flexibility of choosing the electrical transport properties which other Au–nanowire systems cannot presently deliver.
published_date	2017-11-08T03:45:10Z
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score	11.036334

Stability of Schottky and Ohmic Au Nanocatalysts to ZnO Nanowires

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