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Preferential S/Se occupation in an anisotropic ReS2(1−x)Se2x monolayer alloy

Wen Wen, Junhao Lin, Kazu Suenaga, Yuzheng Guo Orcid Logo, Yiming Zhu, Hung-Pin Hsu, Liming Xie

Nanoscale

Swansea University Author: Yuzheng Guo Orcid Logo

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DOI (Published version): 10.1039/C7NR05289H

Abstract

Band structure engineering of two-dimensional (2D) metal dichalcogenides (TMDs) is crucial for their light–matter interaction and optoelectronic applications. Alloying of different metal or chalcogen elements with different stoichiometries in TMDs provides a versatile and efficient approach for modu...

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Published in: Nanoscale
ISSN: 2040-3364 2040-3372
Published: 2017
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URI: https://cronfa.swan.ac.uk/Record/cronfa37271
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first_indexed 2017-11-29T14:11:44Z
last_indexed 2018-02-09T05:30:31Z
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spelling 2017-12-07T15:48:46.3984514 v2 37271 2017-11-29 Preferential S/Se occupation in an anisotropic ReS2(1−x)Se2x monolayer alloy 2c285ab01f88f7ecb25a3aacabee52ea 0000-0003-2656-0340 Yuzheng Guo Yuzheng Guo true false 2017-11-29 GENG Band structure engineering of two-dimensional (2D) metal dichalcogenides (TMDs) is crucial for their light–matter interaction and optoelectronic applications. Alloying of different metal or chalcogen elements with different stoichiometries in TMDs provides a versatile and efficient approach for modulating the electronic structure and properties of 2D materials. In 2D alloys, quantification of spatial distribution and local coordination of atoms facilitates the establishment of the structure–property relationship at the atomic scale. Here, we have imaged and analyzed the atomic configuration of sulfur and selenium atoms in anisotropic ReS1.4Se0.6 by scanning transmission electron microscopy (STEM). In Z-contrast images, we have realized the identification and quantification of Re, Se and S at different coordination sites. Different from the random distribution of metal and chalcogen elements in MoS2(1−x)Se2x and Mo1−xWxS2, we find that Se atoms preferentially locate inside of Re4 diamonds in ReS2(1−x)Se2x. Further density function theory (DFT) calculations reveal electronic structure modulation for Se occupation at different sites. Journal Article Nanoscale 2040-3364 2040-3372 31 12 2017 2017-12-31 10.1039/C7NR05289H COLLEGE NANME General Engineering COLLEGE CODE GENG Swansea University 2017-12-07T15:48:46.3984514 2017-11-29T09:04:07.5030927 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering Wen Wen 1 Junhao Lin 2 Kazu Suenaga 3 Yuzheng Guo 0000-0003-2656-0340 4 Yiming Zhu 5 Hung-Pin Hsu 6 Liming Xie 7 0037271-07122017085009.pdf wen2017.pdf 2017-12-07T08:50:09.7070000 Output 1355853 application/pdf Version of Record true 2018-10-27T00:00:00.0000000 false eng
title Preferential S/Se occupation in an anisotropic ReS2(1−x)Se2x monolayer alloy
spellingShingle Preferential S/Se occupation in an anisotropic ReS2(1−x)Se2x monolayer alloy
Yuzheng Guo
title_short Preferential S/Se occupation in an anisotropic ReS2(1−x)Se2x monolayer alloy
title_full Preferential S/Se occupation in an anisotropic ReS2(1−x)Se2x monolayer alloy
title_fullStr Preferential S/Se occupation in an anisotropic ReS2(1−x)Se2x monolayer alloy
title_full_unstemmed Preferential S/Se occupation in an anisotropic ReS2(1−x)Se2x monolayer alloy
title_sort Preferential S/Se occupation in an anisotropic ReS2(1−x)Se2x monolayer alloy
author_id_str_mv 2c285ab01f88f7ecb25a3aacabee52ea
author_id_fullname_str_mv 2c285ab01f88f7ecb25a3aacabee52ea_***_Yuzheng Guo
author Yuzheng Guo
author2 Wen Wen
Junhao Lin
Kazu Suenaga
Yuzheng Guo
Yiming Zhu
Hung-Pin Hsu
Liming Xie
format Journal article
container_title Nanoscale
publishDate 2017
institution Swansea University
issn 2040-3364
2040-3372
doi_str_mv 10.1039/C7NR05289H
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering
document_store_str 1
active_str 0
description Band structure engineering of two-dimensional (2D) metal dichalcogenides (TMDs) is crucial for their light–matter interaction and optoelectronic applications. Alloying of different metal or chalcogen elements with different stoichiometries in TMDs provides a versatile and efficient approach for modulating the electronic structure and properties of 2D materials. In 2D alloys, quantification of spatial distribution and local coordination of atoms facilitates the establishment of the structure–property relationship at the atomic scale. Here, we have imaged and analyzed the atomic configuration of sulfur and selenium atoms in anisotropic ReS1.4Se0.6 by scanning transmission electron microscopy (STEM). In Z-contrast images, we have realized the identification and quantification of Re, Se and S at different coordination sites. Different from the random distribution of metal and chalcogen elements in MoS2(1−x)Se2x and Mo1−xWxS2, we find that Se atoms preferentially locate inside of Re4 diamonds in ReS2(1−x)Se2x. Further density function theory (DFT) calculations reveal electronic structure modulation for Se occupation at different sites.
published_date 2017-12-31T03:46:54Z
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score 11.036116

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