No Cover Image

Journal article 1214 views 380 downloads

Piezotronic Transistor Based on Topological Insulators

Gongwei Hu, Yan Zhang, Lijie Li Orcid Logo, Zhong Lin Wang

ACS Nano

Swansea University Author: Lijie Li Orcid Logo

Abstract

Topological insulators are remarkable envisioned materials, with a potentially wide range of applications spanning from highly precise magnetic sensors to quantum computers. In this work, a novel transistor device based on the topological insulator structure has been postulated and subsequently anal...

Full description

Published in: ACS Nano
ISSN: 1936-0851 1936-086X
Published: 2017
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa37758
Tags: Add Tag
No Tags, Be the first to tag this record!
first_indexed 2017-12-31T05:03:11Z
last_indexed 2020-07-13T18:56:30Z
id cronfa37758
recordtype SURis
fullrecord <?xml version="1.0"?><rfc1807><datestamp>2020-07-13T17:14:49.8496166</datestamp><bib-version>v2</bib-version><id>37758</id><entry>2017-12-30</entry><title>Piezotronic Transistor Based on Topological Insulators</title><swanseaauthors><author><sid>ed2c658b77679a28e4c1dcf95af06bd6</sid><ORCID>0000-0003-4630-7692</ORCID><firstname>Lijie</firstname><surname>Li</surname><name>Lijie Li</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2017-12-30</date><deptcode>EEEG</deptcode><abstract>Topological insulators are remarkable envisioned materials, with a potentially wide range of applications spanning from highly precise magnetic sensors to quantum computers. In this work, a novel transistor device based on the topological insulator structure has been postulated and subsequently analysed using the density function theory. It is found that the switching ratio can reach as high as 10^10, the highest reported so far.</abstract><type>Journal Article</type><journal>ACS Nano</journal><publisher/><issnPrint>1936-0851</issnPrint><issnElectronic>1936-086X</issnElectronic><keywords>piezotronic logical unit; piezotronic switch; piezotronics; quantum state; topological insulator</keywords><publishedDay>24</publishedDay><publishedMonth>12</publishedMonth><publishedYear>2017</publishedYear><publishedDate>2017-12-24</publishedDate><doi>10.1021/acsnano.7b07996</doi><url/><notes/><college>COLLEGE NANME</college><department>Electronic and Electrical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEEG</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2020-07-13T17:14:49.8496166</lastEdited><Created>2017-12-30T21:51:48.2195411</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering</level></path><authors><author><firstname>Gongwei</firstname><surname>Hu</surname><order>1</order></author><author><firstname>Yan</firstname><surname>Zhang</surname><order>2</order></author><author><firstname>Lijie</firstname><surname>Li</surname><orcid>0000-0003-4630-7692</orcid><order>3</order></author><author><firstname>Zhong Lin</firstname><surname>Wang</surname><order>4</order></author></authors><documents><document><filename>0037758-08012018154014.pdf</filename><originalFilename>hu2017.pdf</originalFilename><uploaded>2018-01-08T15:40:14.6970000</uploaded><type>Output</type><contentLength>842864</contentLength><contentType>application/pdf</contentType><version>Accepted Manuscript</version><cronfaStatus>true</cronfaStatus><embargoDate>2018-12-24T00:00:00.0000000</embargoDate><copyrightCorrect>true</copyrightCorrect><language>eng</language></document></documents><OutputDurs/></rfc1807>
spelling 2020-07-13T17:14:49.8496166 v2 37758 2017-12-30 Piezotronic Transistor Based on Topological Insulators ed2c658b77679a28e4c1dcf95af06bd6 0000-0003-4630-7692 Lijie Li Lijie Li true false 2017-12-30 EEEG Topological insulators are remarkable envisioned materials, with a potentially wide range of applications spanning from highly precise magnetic sensors to quantum computers. In this work, a novel transistor device based on the topological insulator structure has been postulated and subsequently analysed using the density function theory. It is found that the switching ratio can reach as high as 10^10, the highest reported so far. Journal Article ACS Nano 1936-0851 1936-086X piezotronic logical unit; piezotronic switch; piezotronics; quantum state; topological insulator 24 12 2017 2017-12-24 10.1021/acsnano.7b07996 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2020-07-13T17:14:49.8496166 2017-12-30T21:51:48.2195411 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Gongwei Hu 1 Yan Zhang 2 Lijie Li 0000-0003-4630-7692 3 Zhong Lin Wang 4 0037758-08012018154014.pdf hu2017.pdf 2018-01-08T15:40:14.6970000 Output 842864 application/pdf Accepted Manuscript true 2018-12-24T00:00:00.0000000 true eng
title Piezotronic Transistor Based on Topological Insulators
spellingShingle Piezotronic Transistor Based on Topological Insulators
Lijie Li
title_short Piezotronic Transistor Based on Topological Insulators
title_full Piezotronic Transistor Based on Topological Insulators
title_fullStr Piezotronic Transistor Based on Topological Insulators
title_full_unstemmed Piezotronic Transistor Based on Topological Insulators
title_sort Piezotronic Transistor Based on Topological Insulators
author_id_str_mv ed2c658b77679a28e4c1dcf95af06bd6
author_id_fullname_str_mv ed2c658b77679a28e4c1dcf95af06bd6_***_Lijie Li
author Lijie Li
author2 Gongwei Hu
Yan Zhang
Lijie Li
Zhong Lin Wang
format Journal article
container_title ACS Nano
publishDate 2017
institution Swansea University
issn 1936-0851
1936-086X
doi_str_mv 10.1021/acsnano.7b07996
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description Topological insulators are remarkable envisioned materials, with a potentially wide range of applications spanning from highly precise magnetic sensors to quantum computers. In this work, a novel transistor device based on the topological insulator structure has been postulated and subsequently analysed using the density function theory. It is found that the switching ratio can reach as high as 10^10, the highest reported so far.
published_date 2017-12-24T03:47:36Z
_version_ 1763752286376427520
score 11.01628