Journal article 1178 views 358 downloads
C-V characteristics of piezotronic metal-insulator-semiconductor transistor
,
Yan Zhang
Science Bulletin, Volume: 65, Issue: 2, Pages: 161 - 168
Swansea University Author:
Lijie Li
-
PDF | Accepted Manuscript
Released under the terms of a Creative Commons Attribution Non-Commercial No Derivatives License (CC-BY-NC-ND).
Download (1.64MB)
DOI (Published version): 10.1016/j.scib.2019.11.001
Abstract
Third generation semiconductors for piezotronics and piezo-phototronics, such as ZnO and GaN, have both piezoelectric and semiconducting properties. Piezotronic devices normally exhibit high strain sensitivity because strain-induced piezoelectric charges control or tune the carrier transport at junc...
| Published in: | Science Bulletin |
|---|---|
| ISSN: | 2095-9273 |
| Published: |
Elsevier BV
2020
|
| Online Access: |
Check full text
|
| URI: | https://cronfa.swan.ac.uk/Record/cronfa52520 |
| Abstract: |
Third generation semiconductors for piezotronics and piezo-phototronics, such as ZnO and GaN, have both piezoelectric and semiconducting properties. Piezotronic devices normally exhibit high strain sensitivity because strain-induced piezoelectric charges control or tune the carrier transport at junctions, contacts and interfaces. The distribution width of piezoelectric charges in a junction is one of important parameters. Capacitance-voltage (C-V) characteristics can be used to estimate the distribution width of strain-induced piezoelectric charges. Piezotronic metal-insulator-semiconductor (MIS) has been modelled by analytical solutions and numerical simulations in this paper, which can serve as guidance for C-V measurements and experimental designs of piezotronic devices. |
|---|---|
| Keywords: |
Piezotronic effect; Capacitance-voltage (C-V) characteristics; Metal-insulator-semiconductor; Distribution width of strain-induced piezoelectric charges |
| College: |
Faculty of Science and Engineering |
| Issue: |
2 |
| Start Page: |
161 |
| End Page: |
168 |