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C-V characteristics of piezotronic metal-insulator-semiconductor transistor

Jiayang Zheng, Yongli Zhou, Yaming Zhang, Lijie Li Orcid Logo, Yan Zhang

Science Bulletin, Volume: 65, Issue: 2, Pages: 161 - 168

Swansea University Author: Lijie Li Orcid Logo

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DOI (Published version): 10.1016/j.scib.2019.11.001

Abstract

Third generation semiconductors for piezotronics and piezo-phototronics, such as ZnO and GaN, have both piezoelectric and semiconducting properties. Piezotronic devices normally exhibit high strain sensitivity because strain-induced piezoelectric charges control or tune the carrier transport at junc...

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Published in: Science Bulletin
ISSN: 2095-9273
Published: Elsevier BV 2020
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URI: https://cronfa.swan.ac.uk/Record/cronfa52520
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first_indexed 2019-11-05T13:14:23Z
last_indexed 2020-11-19T04:12:07Z
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spelling 2020-11-18T15:54:13.9235085 v2 52520 2019-10-21 C-V characteristics of piezotronic metal-insulator-semiconductor transistor ed2c658b77679a28e4c1dcf95af06bd6 0000-0003-4630-7692 Lijie Li Lijie Li true false 2019-10-21 EEEG Third generation semiconductors for piezotronics and piezo-phototronics, such as ZnO and GaN, have both piezoelectric and semiconducting properties. Piezotronic devices normally exhibit high strain sensitivity because strain-induced piezoelectric charges control or tune the carrier transport at junctions, contacts and interfaces. The distribution width of piezoelectric charges in a junction is one of important parameters. Capacitance-voltage (C-V) characteristics can be used to estimate the distribution width of strain-induced piezoelectric charges. Piezotronic metal-insulator-semiconductor (MIS) has been modelled by analytical solutions and numerical simulations in this paper, which can serve as guidance for C-V measurements and experimental designs of piezotronic devices. Journal Article Science Bulletin 65 2 161 168 Elsevier BV 2095-9273 Piezotronic effect; Capacitance-voltage (C-V) characteristics; Metal-insulator-semiconductor; Distribution width of strain-induced piezoelectric charges 30 1 2020 2020-01-30 10.1016/j.scib.2019.11.001 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2020-11-18T15:54:13.9235085 2019-10-21T18:49:58.8964533 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Jiayang Zheng 1 Yongli Zhou 2 Yaming Zhang 3 Lijie Li 0000-0003-4630-7692 4 Yan Zhang 5 52520__15815__83d6c5224e8241a5a38324b331713f5c.pdf zheng2019(2).pdf 2019-11-07T11:33:08.3306053 Output 1716037 application/pdf Accepted Manuscript true 2020-11-05T00:00:00.0000000 Released under the terms of a Creative Commons Attribution Non-Commercial No Derivatives License (CC-BY-NC-ND). true eng http://creativecommons.org/licenses/by-nc-nd/4.0/
title C-V characteristics of piezotronic metal-insulator-semiconductor transistor
spellingShingle C-V characteristics of piezotronic metal-insulator-semiconductor transistor
Lijie Li
title_short C-V characteristics of piezotronic metal-insulator-semiconductor transistor
title_full C-V characteristics of piezotronic metal-insulator-semiconductor transistor
title_fullStr C-V characteristics of piezotronic metal-insulator-semiconductor transistor
title_full_unstemmed C-V characteristics of piezotronic metal-insulator-semiconductor transistor
title_sort C-V characteristics of piezotronic metal-insulator-semiconductor transistor
author_id_str_mv ed2c658b77679a28e4c1dcf95af06bd6
author_id_fullname_str_mv ed2c658b77679a28e4c1dcf95af06bd6_***_Lijie Li
author Lijie Li
author2 Jiayang Zheng
Yongli Zhou
Yaming Zhang
Lijie Li
Yan Zhang
format Journal article
container_title Science Bulletin
container_volume 65
container_issue 2
container_start_page 161
publishDate 2020
institution Swansea University
issn 2095-9273
doi_str_mv 10.1016/j.scib.2019.11.001
publisher Elsevier BV
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description Third generation semiconductors for piezotronics and piezo-phototronics, such as ZnO and GaN, have both piezoelectric and semiconducting properties. Piezotronic devices normally exhibit high strain sensitivity because strain-induced piezoelectric charges control or tune the carrier transport at junctions, contacts and interfaces. The distribution width of piezoelectric charges in a junction is one of important parameters. Capacitance-voltage (C-V) characteristics can be used to estimate the distribution width of strain-induced piezoelectric charges. Piezotronic metal-insulator-semiconductor (MIS) has been modelled by analytical solutions and numerical simulations in this paper, which can serve as guidance for C-V measurements and experimental designs of piezotronic devices.
published_date 2020-01-30T04:04:57Z
_version_ 1763753378041561088
score 11.012678

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