Journal article 885 views 207 downloads
Theoretical study of piezotronic metal–insulator–semiconductor tunnel devices
Qiyuan Zhang,
Xiaolong Feng,
Lijie Li 
Journal of Physics D: Applied Physics, Volume: 51, Issue: 32, Start page: 324006
Swansea University Author:
Lijie Li
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DOI (Published version): 10.1088/1361-6463/aad067
Abstract
Piezotronics has been an emerging concept coupling piezoelectric and semiconducting properties with potential applications in sensors, flexible electronics and nanoelectromechanical systems (NEMS). Piezoelectric field is created under an applied strain, which controls the carrier generation, transpo...
| Published in: | Journal of Physics D: Applied Physics |
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| ISSN: | 0022-3727 1361-6463 |
| Published: |
2018
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| Online Access: |
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa40926 |
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| Abstract: |
Piezotronics has been an emerging concept coupling piezoelectric and semiconducting properties with potential applications in sensors, flexible electronics and nanoelectromechanical systems (NEMS). Piezoelectric field is created under an applied strain, which controls the carrier generation, transport, separation or recombination processes at the interface or junction of the semiconductor devices. Based on the piezotronic theory, we present a one-dimensional model for the metal-insulator-semiconductor (MIS) tunnel diode based on the piezoelectric semiconductor. Analytical solutions of piezoelectric modulated tunneling are described to reveal the piezotronic effect on the MIS tunnel junction. Numerical simulation of the carrier transport properties is provided for demonstrating the piezotronic effect on MIS tunnel devices. |
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| College: |
Faculty of Science and Engineering |
| Issue: |
32 |
| Start Page: |
324006 |