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Theoretical study of piezotronic metal–insulator–semiconductor tunnel devices

Qiyuan Zhang, Xiaolong Feng, Lijie Li Orcid Logo

Journal of Physics D: Applied Physics, Volume: 51, Issue: 32, Start page: 324006

Swansea University Author: Lijie Li Orcid Logo

Abstract

Piezotronics has been an emerging concept coupling piezoelectric and semiconducting properties with potential applications in sensors, flexible electronics and nanoelectromechanical systems (NEMS). Piezoelectric field is created under an applied strain, which controls the carrier generation, transpo...

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Published in: Journal of Physics D: Applied Physics
ISSN: 0022-3727 1361-6463
Published: 2018
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa40926
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Abstract: Piezotronics has been an emerging concept coupling piezoelectric and semiconducting properties with potential applications in sensors, flexible electronics and nanoelectromechanical systems (NEMS). Piezoelectric field is created under an applied strain, which controls the carrier generation, transport, separation or recombination processes at the interface or junction of the semiconductor devices. Based on the piezotronic theory, we present a one-dimensional model for the metal-insulator-semiconductor (MIS) tunnel diode based on the piezoelectric semiconductor. Analytical solutions of piezoelectric modulated tunneling are described to reveal the piezotronic effect on the MIS tunnel junction. Numerical simulation of the carrier transport properties is provided for demonstrating the piezotronic effect on MIS tunnel devices.
College: College of Engineering
Issue: 32
Start Page: 324006