### Mechanical responses of a-axis GaN nanowires under axial loads

R J Wang, C Y Wang, Y T Feng, Chun Tang, Yuntian Feng , Chengyuan Wang

Nanotechnology, Volume: 29, Issue: 9, Start page: 095707

Swansea University Authors:

• PDF | Accepted Manuscript

DOI (Published version): 10.1088/1361-6528/aaa64d

Abstract

Gallium nitride (GaN) nanowires (NWs) hold technological significance as functional components in emergent nano-piezotronics. However, the examination of their mechanical responses, especially the mechanistic understanding of behavior beyond elasticity (at failure) remains limited due to the constra...

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Published in: Nanotechnology 0957-4484 1361-6528 2018 https://cronfa.swan.ac.uk/Record/cronfa38763 No Tags, Be the first to tag this record!
first_indexed 2018-02-19T14:33:19Z 2020-07-13T18:58:01Z cronfa38763 SURis 2020-07-13T15:52:34.4623742v2387632018-02-19Mechanical responses of a-axis GaN nanowires under axial loadsd66794f9c1357969a5badf654f9602750000-0002-6396-8698YuntianFengYuntian Fengtruefalsefdea93ab99f51d0b3921d3601876c1e50000-0002-1001-2537ChengyuanWangChengyuan Wangtruefalse2018-02-19CIVLGallium nitride (GaN) nanowires (NWs) hold technological significance as functional components in emergent nano-piezotronics. However, the examination of their mechanical responses, especially the mechanistic understanding of behavior beyond elasticity (at failure) remains limited due to the constraints of in situ experimentation. We therefore performed simulations of the molecular dynamics (MD) of the mechanical behavior of $[1\bar{2}10]$-oriented GaN NWs subjected to tension or compression loading until failure. The mechanical properties and critical deformation processes are characterized in relation to NW sizes and loading conditions. Detailed examinations revealed that the failure mechanisms are size-dependent and controlled by the dislocation mobility on shuffle-set pyramidal planes. The size dependence of the elastic behavior is also examined in terms of the surface structure determined modification of Young's modulus. In addition, a comparison with c-axis NWs is made to show how size-effect trends vary with the growth orientation of NWs.Journal ArticleNanotechnology2990957070957-44841361-6528311220182018-12-3110.1088/1361-6528/aaa64dCOLLEGE NANMECivil EngineeringCOLLEGE CODECIVLSwansea University2020-07-13T15:52:34.46237422018-02-19T09:49:57.8524430Faculty of Science and EngineeringSchool of Aerospace, Civil, Electrical, General and Mechanical Engineering - Civil EngineeringR JWang1C YWang2Y TFeng3ChunTang4YuntianFeng0000-0002-6396-86985ChengyuanWang0000-0002-1001-253760038763-20022018111545.pdfwang2018(2).pdf2018-02-20T11:15:45.1100000Output2002214application/pdfAccepted Manuscripttrue2019-01-30T00:00:00.0000000trueeng 2020-07-13T15:52:34.4623742 v2 38763 2018-02-19 Mechanical responses of a-axis GaN nanowires under axial loads d66794f9c1357969a5badf654f960275 0000-0002-6396-8698 Yuntian Feng Yuntian Feng true false fdea93ab99f51d0b3921d3601876c1e5 0000-0002-1001-2537 Chengyuan Wang Chengyuan Wang true false 2018-02-19 CIVL Gallium nitride (GaN) nanowires (NWs) hold technological significance as functional components in emergent nano-piezotronics. However, the examination of their mechanical responses, especially the mechanistic understanding of behavior beyond elasticity (at failure) remains limited due to the constraints of in situ experimentation. We therefore performed simulations of the molecular dynamics (MD) of the mechanical behavior of $[1\bar{2}10]$-oriented GaN NWs subjected to tension or compression loading until failure. The mechanical properties and critical deformation processes are characterized in relation to NW sizes and loading conditions. Detailed examinations revealed that the failure mechanisms are size-dependent and controlled by the dislocation mobility on shuffle-set pyramidal planes. The size dependence of the elastic behavior is also examined in terms of the surface structure determined modification of Young's modulus. In addition, a comparison with c-axis NWs is made to show how size-effect trends vary with the growth orientation of NWs. Journal Article Nanotechnology 29 9 095707 0957-4484 1361-6528 31 12 2018 2018-12-31 10.1088/1361-6528/aaa64d COLLEGE NANME Civil Engineering COLLEGE CODE CIVL Swansea University 2020-07-13T15:52:34.4623742 2018-02-19T09:49:57.8524430 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Civil Engineering R J Wang 1 C Y Wang 2 Y T Feng 3 Chun Tang 4 Yuntian Feng 0000-0002-6396-8698 5 Chengyuan Wang 0000-0002-1001-2537 6 0038763-20022018111545.pdf wang2018(2).pdf 2018-02-20T11:15:45.1100000 Output 2002214 application/pdf Accepted Manuscript true 2019-01-30T00:00:00.0000000 true eng Mechanical responses of a-axis GaN nanowires under axial loads Mechanical responses of a-axis GaN nanowires under axial loads Yuntian Feng Chengyuan Wang Mechanical responses of a-axis GaN nanowires under axial loads Mechanical responses of a-axis GaN nanowires under axial loads Mechanical responses of a-axis GaN nanowires under axial loads Mechanical responses of a-axis GaN nanowires under axial loads Mechanical responses of a-axis GaN nanowires under axial loads d66794f9c1357969a5badf654f960275 fdea93ab99f51d0b3921d3601876c1e5 d66794f9c1357969a5badf654f960275_***_Yuntian Feng fdea93ab99f51d0b3921d3601876c1e5_***_Chengyuan Wang Yuntian Feng Chengyuan Wang R J Wang C Y Wang Y T Feng Chun Tang Yuntian Feng Chengyuan Wang Journal article Nanotechnology 29 9 095707 2018 Swansea University 0957-4484 1361-6528 10.1088/1361-6528/aaa64d Faculty of Science and Engineering facultyofscienceandengineering Faculty of Science and Engineering facultyofscienceandengineering Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Civil Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Civil Engineering 1 0 Gallium nitride (GaN) nanowires (NWs) hold technological significance as functional components in emergent nano-piezotronics. However, the examination of their mechanical responses, especially the mechanistic understanding of behavior beyond elasticity (at failure) remains limited due to the constraints of in situ experimentation. We therefore performed simulations of the molecular dynamics (MD) of the mechanical behavior of $[1\bar{2}10]$-oriented GaN NWs subjected to tension or compression loading until failure. The mechanical properties and critical deformation processes are characterized in relation to NW sizes and loading conditions. Detailed examinations revealed that the failure mechanisms are size-dependent and controlled by the dislocation mobility on shuffle-set pyramidal planes. The size dependence of the elastic behavior is also examined in terms of the surface structure determined modification of Young's modulus. In addition, a comparison with c-axis NWs is made to show how size-effect trends vary with the growth orientation of NWs. 2018-12-31T03:47:00Z 1757051848703868928 10.927644