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Mechanical responses of a-axis GaN nanowires under axial loads

R J Wang, C Y Wang, Y T Feng, Chun Tang, Yuntian Feng Orcid Logo, Chengyuan Wang Orcid Logo

Nanotechnology, Volume: 29, Issue: 9, Start page: 095707

Swansea University Authors: Yuntian Feng Orcid Logo, Chengyuan Wang Orcid Logo

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DOI (Published version): 10.1088/1361-6528/aaa64d

Abstract

Gallium nitride (GaN) nanowires (NWs) hold technological significance as functional components in emergent nano-piezotronics. However, the examination of their mechanical responses, especially the mechanistic understanding of behavior beyond elasticity (at failure) remains limited due to the constra...

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Published in: Nanotechnology
ISSN: 0957-4484 1361-6528
Published: 2018
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URI: https://cronfa.swan.ac.uk/Record/cronfa38763
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spelling 2020-07-13T15:52:34.4623742 v2 38763 2018-02-19 Mechanical responses of a-axis GaN nanowires under axial loads d66794f9c1357969a5badf654f960275 0000-0002-6396-8698 Yuntian Feng Yuntian Feng true false fdea93ab99f51d0b3921d3601876c1e5 0000-0002-1001-2537 Chengyuan Wang Chengyuan Wang true false 2018-02-19 CIVL Gallium nitride (GaN) nanowires (NWs) hold technological significance as functional components in emergent nano-piezotronics. However, the examination of their mechanical responses, especially the mechanistic understanding of behavior beyond elasticity (at failure) remains limited due to the constraints of in situ experimentation. We therefore performed simulations of the molecular dynamics (MD) of the mechanical behavior of $[1\bar{2}10]$-oriented GaN NWs subjected to tension or compression loading until failure. The mechanical properties and critical deformation processes are characterized in relation to NW sizes and loading conditions. Detailed examinations revealed that the failure mechanisms are size-dependent and controlled by the dislocation mobility on shuffle-set pyramidal planes. The size dependence of the elastic behavior is also examined in terms of the surface structure determined modification of Young's modulus. In addition, a comparison with c-axis NWs is made to show how size-effect trends vary with the growth orientation of NWs. Journal Article Nanotechnology 29 9 095707 0957-4484 1361-6528 31 12 2018 2018-12-31 10.1088/1361-6528/aaa64d COLLEGE NANME Civil Engineering COLLEGE CODE CIVL Swansea University 2020-07-13T15:52:34.4623742 2018-02-19T09:49:57.8524430 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Civil Engineering R J Wang 1 C Y Wang 2 Y T Feng 3 Chun Tang 4 Yuntian Feng 0000-0002-6396-8698 5 Chengyuan Wang 0000-0002-1001-2537 6 0038763-20022018111545.pdf wang2018(2).pdf 2018-02-20T11:15:45.1100000 Output 2002214 application/pdf Accepted Manuscript true 2019-01-30T00:00:00.0000000 true eng
title Mechanical responses of a-axis GaN nanowires under axial loads
spellingShingle Mechanical responses of a-axis GaN nanowires under axial loads
Yuntian Feng
Chengyuan Wang
title_short Mechanical responses of a-axis GaN nanowires under axial loads
title_full Mechanical responses of a-axis GaN nanowires under axial loads
title_fullStr Mechanical responses of a-axis GaN nanowires under axial loads
title_full_unstemmed Mechanical responses of a-axis GaN nanowires under axial loads
title_sort Mechanical responses of a-axis GaN nanowires under axial loads
author_id_str_mv d66794f9c1357969a5badf654f960275
fdea93ab99f51d0b3921d3601876c1e5
author_id_fullname_str_mv d66794f9c1357969a5badf654f960275_***_Yuntian Feng
fdea93ab99f51d0b3921d3601876c1e5_***_Chengyuan Wang
author Yuntian Feng
Chengyuan Wang
author2 R J Wang
C Y Wang
Y T Feng
Chun Tang
Yuntian Feng
Chengyuan Wang
format Journal article
container_title Nanotechnology
container_volume 29
container_issue 9
container_start_page 095707
publishDate 2018
institution Swansea University
issn 0957-4484
1361-6528
doi_str_mv 10.1088/1361-6528/aaa64d
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Civil Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Civil Engineering
document_store_str 1
active_str 0
description Gallium nitride (GaN) nanowires (NWs) hold technological significance as functional components in emergent nano-piezotronics. However, the examination of their mechanical responses, especially the mechanistic understanding of behavior beyond elasticity (at failure) remains limited due to the constraints of in situ experimentation. We therefore performed simulations of the molecular dynamics (MD) of the mechanical behavior of $[1\bar{2}10]$-oriented GaN NWs subjected to tension or compression loading until failure. The mechanical properties and critical deformation processes are characterized in relation to NW sizes and loading conditions. Detailed examinations revealed that the failure mechanisms are size-dependent and controlled by the dislocation mobility on shuffle-set pyramidal planes. The size dependence of the elastic behavior is also examined in terms of the surface structure determined modification of Young's modulus. In addition, a comparison with c-axis NWs is made to show how size-effect trends vary with the growth orientation of NWs.
published_date 2018-12-31T03:49:08Z
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score 11.035655

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