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Complications in silane-assisted GaN nanowire growth

Nian Jiang Orcid Logo, Saptarsi Ghosh Orcid Logo, Martin Frentrup, Simon M. Fairclough, Kagiso Loeto, Gunnar Kusch Orcid Logo, Rachel A. Oliver, Hannah J. Joyce Orcid Logo

Nanoscale Advances, Volume: 5, Issue: 9, Pages: 2610 - 2620

Swansea University Author: Saptarsi Ghosh Orcid Logo

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DOI (Published version): 10.1039/d2na00939k

Abstract

Understanding the growth mechanisms of III-nitride nanowires is of great importance to realise their full potential. We present a systematic study of silane-assisted GaN nanowire growth on c-sapphire substrates by investigating the surface evolution of the sapphire substrates during the high tempera...

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Published in: Nanoscale Advances
ISSN: 2516-0230
Published: Royal Society of Chemistry (RSC) 2023
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URI: https://cronfa.swan.ac.uk/Record/cronfa66872
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Abstract: Understanding the growth mechanisms of III-nitride nanowires is of great importance to realise their full potential. We present a systematic study of silane-assisted GaN nanowire growth on c-sapphire substrates by investigating the surface evolution of the sapphire substrates during the high temperature annealing, nitridation and nucleation steps, and the growth of GaN nanowires. The nucleation step – which transforms the AlN layer formed during the nitridation step to AlGaN – is critical for subsequent silane-assisted GaN nanowire growth. Both Ga-polar and N-polar GaN nanowires were grown with N-polar nanowires growing much faster than the Ga-polar nanowires. On the top surface of the N-polar GaN nanowires protuberance structures were found, which relates to the presence of Ga-polar domains within the nanowires. Detailed morphology studies revealed ring-like features concentric with the protuberance structures, indicating energetically favourable nucleation sites at inversion domain boundaries. Cathodoluminescence studies showed quenching of emission intensity at the protuberance structures, but the impact is limited to the protuberance structure area only and does not extend to the surrounding areas. Hence it should minimally affect the performance of devices whose functions are based on radial heterostructures, suggesting that radial heterostructures remain a promising device structure.
College: Faculty of Science and Engineering
Funders: We acknowledge the European Research Council for the nancial support under the Starting Grant 716471 ACrossWire. We acknowledge use of the Cambridge XPS System, part of Sir Henry Royce Institute– Cambridge Equipment, EPSRC grant EP/P024947/1 and Dr CM Fernandez-Posada for her technical support.
Issue: 9
Start Page: 2610
End Page: 2620

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