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Complications in silane-assisted GaN nanowire growth

Nian Jiang Orcid Logo, Saptarsi Ghosh Orcid Logo, Martin Frentrup, Simon M. Fairclough, Kagiso Loeto, Gunnar Kusch Orcid Logo, Rachel A. Oliver, Hannah J. Joyce Orcid Logo

Nanoscale Advances, Volume: 5, Issue: 9, Pages: 2610 - 2620

Swansea University Author: Saptarsi Ghosh Orcid Logo

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DOI (Published version): 10.1039/d2na00939k

Abstract

Understanding the growth mechanisms of III-nitride nanowires is of great importance to realise their full potential. We present a systematic study of silane-assisted GaN nanowire growth on c-sapphire substrates by investigating the surface evolution of the sapphire substrates during the high tempera...

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Published in: Nanoscale Advances
ISSN: 2516-0230
Published: Royal Society of Chemistry (RSC) 2023
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URI: https://cronfa.swan.ac.uk/Record/cronfa66872
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We present a systematic study of silane-assisted GaN nanowire growth on c-sapphire substrates by investigating the surface evolution of the sapphire substrates during the high temperature annealing, nitridation and nucleation steps, and the growth of GaN nanowires. The nucleation step – which transforms the AlN layer formed during the nitridation step to AlGaN – is critical for subsequent silane-assisted GaN nanowire growth. Both Ga-polar and N-polar GaN nanowires were grown with N-polar nanowires growing much faster than the Ga-polar nanowires. On the top surface of the N-polar GaN nanowires protuberance structures were found, which relates to the presence of Ga-polar domains within the nanowires. Detailed morphology studies revealed ring-like features concentric with the protuberance structures, indicating energetically favourable nucleation sites at inversion domain boundaries. Cathodoluminescence studies showed quenching of emission intensity at the protuberance structures, but the impact is limited to the protuberance structure area only and does not extend to the surrounding areas. 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spelling v2 66872 2024-06-23 Complications in silane-assisted GaN nanowire growth 3e247ecabd6eddd319264d066b0ce959 0000-0003-1685-6228 Saptarsi Ghosh Saptarsi Ghosh true false 2024-06-23 ACEM Understanding the growth mechanisms of III-nitride nanowires is of great importance to realise their full potential. We present a systematic study of silane-assisted GaN nanowire growth on c-sapphire substrates by investigating the surface evolution of the sapphire substrates during the high temperature annealing, nitridation and nucleation steps, and the growth of GaN nanowires. The nucleation step – which transforms the AlN layer formed during the nitridation step to AlGaN – is critical for subsequent silane-assisted GaN nanowire growth. Both Ga-polar and N-polar GaN nanowires were grown with N-polar nanowires growing much faster than the Ga-polar nanowires. On the top surface of the N-polar GaN nanowires protuberance structures were found, which relates to the presence of Ga-polar domains within the nanowires. Detailed morphology studies revealed ring-like features concentric with the protuberance structures, indicating energetically favourable nucleation sites at inversion domain boundaries. Cathodoluminescence studies showed quenching of emission intensity at the protuberance structures, but the impact is limited to the protuberance structure area only and does not extend to the surrounding areas. Hence it should minimally affect the performance of devices whose functions are based on radial heterostructures, suggesting that radial heterostructures remain a promising device structure. Journal Article Nanoscale Advances 5 9 2610 2620 Royal Society of Chemistry (RSC) 2516-0230 20 4 2023 2023-04-20 10.1039/d2na00939k COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University Another institution paid the OA fee We acknowledge the European Research Council for the nancial support under the Starting Grant 716471 ACrossWire. We acknowledge use of the Cambridge XPS System, part of Sir Henry Royce Institute– Cambridge Equipment, EPSRC grant EP/P024947/1 and Dr CM Fernandez-Posada for her technical support. 2024-07-24T13:24:53.0482537 2024-06-23T20:00:25.0612381 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Nian Jiang 0000-0001-6391-5249 1 Saptarsi Ghosh 0000-0003-1685-6228 2 Martin Frentrup 3 Simon M. Fairclough 4 Kagiso Loeto 5 Gunnar Kusch 0000-0003-2743-1022 6 Rachel A. Oliver 7 Hannah J. Joyce 0000-0002-9737-680x 8 66872__30965__3a81348e0a3a4ebc88c9827ed2d0509e.pdf 66872.VoR.pdf 2024-07-24T13:22:06.8500610 Output 3183945 application/pdf Version of Record true This article is licensed under the terms of a Creative Commons Attribution 3.0 Unported Licence. true eng http://creativecommons.org/licenses/by/3.0/
title Complications in silane-assisted GaN nanowire growth
spellingShingle Complications in silane-assisted GaN nanowire growth
Saptarsi Ghosh
title_short Complications in silane-assisted GaN nanowire growth
title_full Complications in silane-assisted GaN nanowire growth
title_fullStr Complications in silane-assisted GaN nanowire growth
title_full_unstemmed Complications in silane-assisted GaN nanowire growth
title_sort Complications in silane-assisted GaN nanowire growth
author_id_str_mv 3e247ecabd6eddd319264d066b0ce959
author_id_fullname_str_mv 3e247ecabd6eddd319264d066b0ce959_***_Saptarsi Ghosh
author Saptarsi Ghosh
author2 Nian Jiang
Saptarsi Ghosh
Martin Frentrup
Simon M. Fairclough
Kagiso Loeto
Gunnar Kusch
Rachel A. Oliver
Hannah J. Joyce
format Journal article
container_title Nanoscale Advances
container_volume 5
container_issue 9
container_start_page 2610
publishDate 2023
institution Swansea University
issn 2516-0230
doi_str_mv 10.1039/d2na00939k
publisher Royal Society of Chemistry (RSC)
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description Understanding the growth mechanisms of III-nitride nanowires is of great importance to realise their full potential. We present a systematic study of silane-assisted GaN nanowire growth on c-sapphire substrates by investigating the surface evolution of the sapphire substrates during the high temperature annealing, nitridation and nucleation steps, and the growth of GaN nanowires. The nucleation step – which transforms the AlN layer formed during the nitridation step to AlGaN – is critical for subsequent silane-assisted GaN nanowire growth. Both Ga-polar and N-polar GaN nanowires were grown with N-polar nanowires growing much faster than the Ga-polar nanowires. On the top surface of the N-polar GaN nanowires protuberance structures were found, which relates to the presence of Ga-polar domains within the nanowires. Detailed morphology studies revealed ring-like features concentric with the protuberance structures, indicating energetically favourable nucleation sites at inversion domain boundaries. Cathodoluminescence studies showed quenching of emission intensity at the protuberance structures, but the impact is limited to the protuberance structure area only and does not extend to the surrounding areas. Hence it should minimally affect the performance of devices whose functions are based on radial heterostructures, suggesting that radial heterostructures remain a promising device structure.
published_date 2023-04-20T13:24:52Z
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