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Coherent emission from fully Er 3+ doped monolithic 1-D dielectric microcavity fabricated by rf-sputtering

A. Chiasera, C. Meroni, F. Scotognella, Y.G. Boucher, G. Galzerano, A. Lukowiak, D. Ristic, G. Speranza, S. Valligatla, S. Varas, L. Zur, M. Ivanda, G.C. Righini, S. Taccheo, R. Ramponi, M. Ferrari, Stefano Taccheo Orcid Logo

Optical Materials

Swansea University Author: Stefano Taccheo Orcid Logo

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DOI (Published version): 10.1016/j.optmat.2018.04.057

Abstract

All Er3+ doped dielectric 1-D microcavity was fabricated by rf sputtering technique. The microcavity was constituted by half wave Er3+ doped SiO2 active layer inserted between two Bragg reflectors consists of ten pairs of SiO2/TiO2 layers also doped with Er3+ ions. The scanning electron microscopy w...

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Published in: Optical Materials
ISSN: 09253467
Published: 2018
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URI: https://cronfa.swan.ac.uk/Record/cronfa40264
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spelling 2018-08-06T15:19:35.7616063 v2 40264 2018-05-18 Coherent emission from fully Er 3+ doped monolithic 1-D dielectric microcavity fabricated by rf-sputtering ab5f951bdf448ec045d42a35d95dc0bf 0000-0003-0578-0563 Stefano Taccheo Stefano Taccheo true false 2018-05-18 MECH All Er3+ doped dielectric 1-D microcavity was fabricated by rf sputtering technique. The microcavity was constituted by half wave Er3+ doped SiO2 active layer inserted between two Bragg reflectors consists of ten pairs of SiO2/TiO2 layers also doped with Er3+ ions. The scanning electron microscopy was used to check the morphology of the structure. Transmission measurements confirm the third and first order cavity resonance at 530 nm and 1560 nm, respectively. The photoluminescence measurements were obtained by optically exciting at the third order cavity resonance using 514.5 nm Ar+ laser with an excitation angle of 30°. The Full Width at Half Maximum of the emission peak at 1560 nm decrease with the pump power until the spectral resolution of the detection system of ∼1.0 nm. Moreover, the emission intensity presents a non-linear behavior with the pump power and a threshold at about 24 mW was observed with saturation of the signal at above 185 mW of pump power. Journal Article Optical Materials 09253467 rf-sputtering, 1-D dielectric microcavity, Silica, Titania, Erbium, Coherent emission 31 12 2018 2018-12-31 10.1016/j.optmat.2018.04.057 COLLEGE NANME Mechanical Engineering COLLEGE CODE MECH Swansea University 2018-08-06T15:19:35.7616063 2018-05-18T08:52:36.6268151 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Mechanical Engineering A. Chiasera 1 C. Meroni 2 F. Scotognella 3 Y.G. Boucher 4 G. Galzerano 5 A. Lukowiak 6 D. Ristic 7 G. Speranza 8 S. Valligatla 9 S. Varas 10 L. Zur 11 M. Ivanda 12 G.C. Righini 13 S. Taccheo 14 R. Ramponi 15 M. Ferrari 16 Stefano Taccheo 0000-0003-0578-0563 17 0040264-18052018085553.pdf chiasera2018.pdf 2018-05-18T08:55:53.8130000 Output 618446 application/pdf Accepted Manuscript true 2019-05-10T00:00:00.0000000 false eng
title Coherent emission from fully Er 3+ doped monolithic 1-D dielectric microcavity fabricated by rf-sputtering
spellingShingle Coherent emission from fully Er 3+ doped monolithic 1-D dielectric microcavity fabricated by rf-sputtering
Stefano Taccheo
title_short Coherent emission from fully Er 3+ doped monolithic 1-D dielectric microcavity fabricated by rf-sputtering
title_full Coherent emission from fully Er 3+ doped monolithic 1-D dielectric microcavity fabricated by rf-sputtering
title_fullStr Coherent emission from fully Er 3+ doped monolithic 1-D dielectric microcavity fabricated by rf-sputtering
title_full_unstemmed Coherent emission from fully Er 3+ doped monolithic 1-D dielectric microcavity fabricated by rf-sputtering
title_sort Coherent emission from fully Er 3+ doped monolithic 1-D dielectric microcavity fabricated by rf-sputtering
author_id_str_mv ab5f951bdf448ec045d42a35d95dc0bf
author_id_fullname_str_mv ab5f951bdf448ec045d42a35d95dc0bf_***_Stefano Taccheo
author Stefano Taccheo
author2 A. Chiasera
C. Meroni
F. Scotognella
Y.G. Boucher
G. Galzerano
A. Lukowiak
D. Ristic
G. Speranza
S. Valligatla
S. Varas
L. Zur
M. Ivanda
G.C. Righini
S. Taccheo
R. Ramponi
M. Ferrari
Stefano Taccheo
format Journal article
container_title Optical Materials
publishDate 2018
institution Swansea University
issn 09253467
doi_str_mv 10.1016/j.optmat.2018.04.057
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Mechanical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Mechanical Engineering
document_store_str 1
active_str 0
description All Er3+ doped dielectric 1-D microcavity was fabricated by rf sputtering technique. The microcavity was constituted by half wave Er3+ doped SiO2 active layer inserted between two Bragg reflectors consists of ten pairs of SiO2/TiO2 layers also doped with Er3+ ions. The scanning electron microscopy was used to check the morphology of the structure. Transmission measurements confirm the third and first order cavity resonance at 530 nm and 1560 nm, respectively. The photoluminescence measurements were obtained by optically exciting at the third order cavity resonance using 514.5 nm Ar+ laser with an excitation angle of 30°. The Full Width at Half Maximum of the emission peak at 1560 nm decrease with the pump power until the spectral resolution of the detection system of ∼1.0 nm. Moreover, the emission intensity presents a non-linear behavior with the pump power and a threshold at about 24 mW was observed with saturation of the signal at above 185 mW of pump power.
published_date 2018-12-31T03:51:16Z
_version_ 1763752517832802304
score 11.012678

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