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Engineering of a Mo/SixNy Diffusion Barrier to Reduce the Formation of MoS2 in Cu2ZnSnS4 Thin Film Solar Cells

Zhengfei Wei, Chung Man Fung, Adam Pockett, Thomas O. Dunlop, James D. McGettrick, Peter J. Heard, Owen Guy Orcid Logo, Matt Carnie Orcid Logo, James Sullivan Orcid Logo, Trystan Watson Orcid Logo

ACS Applied Energy Materials, Volume: 1, Issue: 6, Pages: 2749 - 2757

Swansea University Authors: Zhengfei Wei, Owen Guy Orcid Logo, Matt Carnie Orcid Logo, James Sullivan Orcid Logo, Trystan Watson Orcid Logo

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DOI (Published version): 10.1021/acsaem.8b00401

Abstract

The optimisation of the interface between back contact and absorber is one of the main challenges to improve the electrical behaviour and further enhance the efficiencies of Cu2ZnSn(S,Se)4 (CZTS(e)) solar cell devices. In this work, Mo/SixNy thin films with various film thicknesses were introduced a...

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Published in: ACS Applied Energy Materials
ISSN: 2574-0962 2574-0962
Published: 2018
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URI: https://cronfa.swan.ac.uk/Record/cronfa40527
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In this work, Mo/SixNy thin films with various film thicknesses were introduced as an interfacial layer to explore its influence on opto-electronic properties of the pure sulphide CZTS thin film solar cells. The SixNy was deposited through plasma enhanced chemical vapour deposition (PECVD). The film thickness and stress of the Mo/SixNy films were controlled to improve the adhesion of the CZTS layer and reduce the chances of cracking the deposited films. Energy dispersive X-Ray spectroscopy (EDS) mapping measurements performed directly on the cross-section of Mo/SixNy/CZTS/Mo films indicate that the SixNy intermediate layer can effectively inhibit the formation of a highly resistive MoS2 layer and decomposition of CZTS at the CZTS/Molybdenum (Mo) interface region. A reduced efficiency was obtained with a SixNy modified back contact compared with the devices without this layer. This could be due to the increased recombination and poor hole extraction stemming from the very low valance band maximum of SixNy obtained from ultraviolet photoelectron spectroscopy (UPS) measurements. Temperature dependent current density-voltage (T-JV) and temperature dependent transient photovoltage (T-TPV) measurements were used to uncover insights into the internal recombination dynamics of the charge carriers.</abstract><type>Journal Article</type><journal>ACS Applied Energy Materials</journal><volume>1</volume><journalNumber>6</journalNumber><paginationStart>2749</paginationStart><paginationEnd>2757</paginationEnd><publisher/><issnPrint>2574-0962</issnPrint><issnElectronic>2574-0962</issnElectronic><keywords/><publishedDay>31</publishedDay><publishedMonth>12</publishedMonth><publishedYear>2018</publishedYear><publishedDate>2018-12-31</publishedDate><doi>10.1021/acsaem.8b00401</doi><url/><notes/><college>COLLEGE NANME</college><department>Materials Science and Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>MTLS</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2018-08-07T10:21:36.9648187</lastEdited><Created>2018-05-31T11:04:44.1145243</Created><path><level id="1">College of Engineering</level><level id="2">Engineering</level></path><authors><author><firstname>Zhengfei</firstname><surname>Wei</surname><orcid/><order>1</order></author><author><firstname>Chung Man</firstname><surname>Fung</surname><order>2</order></author><author><firstname>Adam</firstname><surname>Pockett</surname><order>3</order></author><author><firstname>Thomas O.</firstname><surname>Dunlop</surname><order>4</order></author><author><firstname>James D.</firstname><surname>McGettrick</surname><order>5</order></author><author><firstname>Peter J.</firstname><surname>Heard</surname><order>6</order></author><author><firstname>Owen</firstname><surname>Guy</surname><orcid>0000-0002-6449-4033</orcid><order>7</order></author><author><firstname>Matt</firstname><surname>Carnie</surname><orcid>0000-0002-4232-1967</orcid><order>8</order></author><author><firstname>James</firstname><surname>Sullivan</surname><orcid>0000-0003-1018-773X</orcid><order>9</order></author><author><firstname>Trystan</firstname><surname>Watson</surname><orcid>0000-0002-8015-1436</orcid><order>10</order></author></authors><documents><document><filename>0040527-31052018110634.pdf</filename><originalFilename>wei2018.pdf</originalFilename><uploaded>2018-05-31T11:06:34.2070000</uploaded><type>Output</type><contentLength>2567249</contentLength><contentType>application/pdf</contentType><version>Accepted Manuscript</version><cronfaStatus>true</cronfaStatus><embargoDate>2019-05-22T00:00:00.0000000</embargoDate><copyrightCorrect>true</copyrightCorrect><language>eng</language></document></documents><OutputDurs/></rfc1807>
spelling 2018-08-07T10:21:36.9648187 v2 40527 2018-05-31 Engineering of a Mo/SixNy Diffusion Barrier to Reduce the Formation of MoS2 in Cu2ZnSnS4 Thin Film Solar Cells e4ae52ae9b63b7b6da834c460ee3bb2d Zhengfei Wei Zhengfei Wei true false c7fa5949b8528e048c5b978005f66794 0000-0002-6449-4033 Owen Guy Owen Guy true false 73b367694366a646b90bb15db32bb8c0 0000-0002-4232-1967 Matt Carnie Matt Carnie true false 40e32d66748ab74184a31207ab145708 0000-0003-1018-773X James Sullivan James Sullivan true false a210327b52472cfe8df9b8108d661457 0000-0002-8015-1436 Trystan Watson Trystan Watson true false 2018-05-31 MTLS The optimisation of the interface between back contact and absorber is one of the main challenges to improve the electrical behaviour and further enhance the efficiencies of Cu2ZnSn(S,Se)4 (CZTS(e)) solar cell devices. In this work, Mo/SixNy thin films with various film thicknesses were introduced as an interfacial layer to explore its influence on opto-electronic properties of the pure sulphide CZTS thin film solar cells. The SixNy was deposited through plasma enhanced chemical vapour deposition (PECVD). The film thickness and stress of the Mo/SixNy films were controlled to improve the adhesion of the CZTS layer and reduce the chances of cracking the deposited films. Energy dispersive X-Ray spectroscopy (EDS) mapping measurements performed directly on the cross-section of Mo/SixNy/CZTS/Mo films indicate that the SixNy intermediate layer can effectively inhibit the formation of a highly resistive MoS2 layer and decomposition of CZTS at the CZTS/Molybdenum (Mo) interface region. A reduced efficiency was obtained with a SixNy modified back contact compared with the devices without this layer. This could be due to the increased recombination and poor hole extraction stemming from the very low valance band maximum of SixNy obtained from ultraviolet photoelectron spectroscopy (UPS) measurements. Temperature dependent current density-voltage (T-JV) and temperature dependent transient photovoltage (T-TPV) measurements were used to uncover insights into the internal recombination dynamics of the charge carriers. Journal Article ACS Applied Energy Materials 1 6 2749 2757 2574-0962 2574-0962 31 12 2018 2018-12-31 10.1021/acsaem.8b00401 COLLEGE NANME Materials Science and Engineering COLLEGE CODE MTLS Swansea University 2018-08-07T10:21:36.9648187 2018-05-31T11:04:44.1145243 College of Engineering Engineering Zhengfei Wei 1 Chung Man Fung 2 Adam Pockett 3 Thomas O. Dunlop 4 James D. McGettrick 5 Peter J. Heard 6 Owen Guy 0000-0002-6449-4033 7 Matt Carnie 0000-0002-4232-1967 8 James Sullivan 0000-0003-1018-773X 9 Trystan Watson 0000-0002-8015-1436 10 0040527-31052018110634.pdf wei2018.pdf 2018-05-31T11:06:34.2070000 Output 2567249 application/pdf Accepted Manuscript true 2019-05-22T00:00:00.0000000 true eng
title Engineering of a Mo/SixNy Diffusion Barrier to Reduce the Formation of MoS2 in Cu2ZnSnS4 Thin Film Solar Cells
spellingShingle Engineering of a Mo/SixNy Diffusion Barrier to Reduce the Formation of MoS2 in Cu2ZnSnS4 Thin Film Solar Cells
Zhengfei Wei
Owen Guy
Matt Carnie
James Sullivan
Trystan Watson
title_short Engineering of a Mo/SixNy Diffusion Barrier to Reduce the Formation of MoS2 in Cu2ZnSnS4 Thin Film Solar Cells
title_full Engineering of a Mo/SixNy Diffusion Barrier to Reduce the Formation of MoS2 in Cu2ZnSnS4 Thin Film Solar Cells
title_fullStr Engineering of a Mo/SixNy Diffusion Barrier to Reduce the Formation of MoS2 in Cu2ZnSnS4 Thin Film Solar Cells
title_full_unstemmed Engineering of a Mo/SixNy Diffusion Barrier to Reduce the Formation of MoS2 in Cu2ZnSnS4 Thin Film Solar Cells
title_sort Engineering of a Mo/SixNy Diffusion Barrier to Reduce the Formation of MoS2 in Cu2ZnSnS4 Thin Film Solar Cells
author_id_str_mv e4ae52ae9b63b7b6da834c460ee3bb2d
c7fa5949b8528e048c5b978005f66794
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40e32d66748ab74184a31207ab145708
a210327b52472cfe8df9b8108d661457
author_id_fullname_str_mv e4ae52ae9b63b7b6da834c460ee3bb2d_***_Zhengfei Wei
c7fa5949b8528e048c5b978005f66794_***_Owen Guy
73b367694366a646b90bb15db32bb8c0_***_Matt Carnie
40e32d66748ab74184a31207ab145708_***_James Sullivan
a210327b52472cfe8df9b8108d661457_***_Trystan Watson
author Zhengfei Wei
Owen Guy
Matt Carnie
James Sullivan
Trystan Watson
author2 Zhengfei Wei
Chung Man Fung
Adam Pockett
Thomas O. Dunlop
James D. McGettrick
Peter J. Heard
Owen Guy
Matt Carnie
James Sullivan
Trystan Watson
format Journal article
container_title ACS Applied Energy Materials
container_volume 1
container_issue 6
container_start_page 2749
publishDate 2018
institution Swansea University
issn 2574-0962
2574-0962
doi_str_mv 10.1021/acsaem.8b00401
college_str College of Engineering
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hierarchy_top_id collegeofengineering
hierarchy_top_title College of Engineering
hierarchy_parent_id collegeofengineering
hierarchy_parent_title College of Engineering
department_str Engineering{{{_:::_}}}College of Engineering{{{_:::_}}}Engineering
document_store_str 1
active_str 0
description The optimisation of the interface between back contact and absorber is one of the main challenges to improve the electrical behaviour and further enhance the efficiencies of Cu2ZnSn(S,Se)4 (CZTS(e)) solar cell devices. In this work, Mo/SixNy thin films with various film thicknesses were introduced as an interfacial layer to explore its influence on opto-electronic properties of the pure sulphide CZTS thin film solar cells. The SixNy was deposited through plasma enhanced chemical vapour deposition (PECVD). The film thickness and stress of the Mo/SixNy films were controlled to improve the adhesion of the CZTS layer and reduce the chances of cracking the deposited films. Energy dispersive X-Ray spectroscopy (EDS) mapping measurements performed directly on the cross-section of Mo/SixNy/CZTS/Mo films indicate that the SixNy intermediate layer can effectively inhibit the formation of a highly resistive MoS2 layer and decomposition of CZTS at the CZTS/Molybdenum (Mo) interface region. A reduced efficiency was obtained with a SixNy modified back contact compared with the devices without this layer. This could be due to the increased recombination and poor hole extraction stemming from the very low valance band maximum of SixNy obtained from ultraviolet photoelectron spectroscopy (UPS) measurements. Temperature dependent current density-voltage (T-JV) and temperature dependent transient photovoltage (T-TPV) measurements were used to uncover insights into the internal recombination dynamics of the charge carriers.
published_date 2018-12-31T03:54:50Z
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score 10.916503