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Temperature-light-dependent JV and TPV analysis of pure sulfide based Cu<inf>2</inf> ZnSnS<inf>4</inf> solar cells

Zhengfei Wei, Adam Pockett, James D. Mcgettrick, Chung Man Fung, Owen J. Guy, Matthew J. Carnie, Trystan M. Watson

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), Pages: 2767 - 2770

Swansea University Author: Zhengfei Wei

Abstract

In this work, we exploit temperature-light-dependent current-density-voltage (T-JV) and transient photovoltage measurements (T-TPV) to investigate charge dynamics, especially at the back contact, in solution-processed Cu 2 ZnSnS 4 solar cells. A Si x N y hole barrier was grown on top of Mo to help t...

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Published in: 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)
ISBN: 978-1-5386-8530-3 978-1-5386-8529-7
ISSN: 0160-8371
Published: WAIKOLOA, HAWAII, USA 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)
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URI: https://cronfa.swan.ac.uk/Record/cronfa48393
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Abstract: In this work, we exploit temperature-light-dependent current-density-voltage (T-JV) and transient photovoltage measurements (T-TPV) to investigate charge dynamics, especially at the back contact, in solution-processed Cu 2 ZnSnS 4 solar cells. A Si x N y hole barrier was grown on top of Mo to help to investigate carrier dynamics. By using T-JV techniques, we are able to observe the dominant recombination mechanism occurring at the back contact interface that could lead to significant open-circuit voltage (V oc ) loss. In combination with T-TPV, TPV decay time mapping across temperature in a range of 213-313 K and light intensity range of 0.01-1 suns was used to explore interface related recombination and charge transport for CZTS solar cell devices.
College: College of Engineering
Start Page: 2767
End Page: 2770