Conference Paper/Proceeding/Abstract 981 views 160 downloads
Temperature-light-dependent JV and TPV analysis of pure sulfide based Cu<inf>2</inf> ZnSnS<inf>4</inf> solar cells
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), Pages: 2767 - 2770
Swansea University Authors:
Zhengfei Wei, Adam Pockett, Owen Guy , Matt Carnie
, Trystan Watson
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DOI (Published version): 10.1109/pvsc.2018.8547605
Abstract
In this work, we exploit temperature-light-dependent current-density-voltage (T-JV) and transient photovoltage measurements (T-TPV) to investigate charge dynamics, especially at the back contact, in solution-processed Cu 2 ZnSnS 4 solar cells. A Si x N y hole barrier was grown on top of Mo to help t...
Published in: | 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) |
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ISBN: | 978-1-5386-8530-3 978-1-5386-8529-7 |
ISSN: | 0160-8371 |
Published: |
WAIKOLOA, HAWAII, USA
IEEE
2018
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URI: | https://cronfa.swan.ac.uk/Record/cronfa48393 |
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v2 48393 2019-01-23 Temperature-light-dependent JV and TPV analysis of pure sulfide based Cu<inf>2</inf> ZnSnS<inf>4</inf> solar cells e4ae52ae9b63b7b6da834c460ee3bb2d Zhengfei Wei Zhengfei Wei true false de06433fccc0514dcf45aa9d1fc5c60f Adam Pockett Adam Pockett true false c7fa5949b8528e048c5b978005f66794 0000-0002-6449-4033 Owen Guy Owen Guy true false 73b367694366a646b90bb15db32bb8c0 0000-0002-4232-1967 Matt Carnie Matt Carnie true false a210327b52472cfe8df9b8108d661457 0000-0002-8015-1436 Trystan Watson Trystan Watson true false 2019-01-23 MTLS In this work, we exploit temperature-light-dependent current-density-voltage (T-JV) and transient photovoltage measurements (T-TPV) to investigate charge dynamics, especially at the back contact, in solution-processed Cu 2 ZnSnS 4 solar cells. A Si x N y hole barrier was grown on top of Mo to help to investigate carrier dynamics. By using T-JV techniques, we are able to observe the dominant recombination mechanism occurring at the back contact interface that could lead to significant open-circuit voltage (V oc ) loss. In combination with T-TPV, TPV decay time mapping across temperature in a range of 213-313 K and light intensity range of 0.01-1 suns was used to explore interface related recombination and charge transport for CZTS solar cell devices. Conference Paper/Proceeding/Abstract 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) 2767 2770 IEEE WAIKOLOA, HAWAII, USA 978-1-5386-8530-3 978-1-5386-8529-7 0160-8371 1 6 2018 2018-06-01 10.1109/pvsc.2018.8547605 http://dx.doi.org/10.1109/pvsc.2018.8547605 COLLEGE NANME Materials Science and Engineering COLLEGE CODE MTLS Swansea University 2023-06-02T15:17:16.9004769 2019-01-23T11:31:21.2045481 Faculty of Science and Engineering School of Engineering and Applied Sciences - Materials Science and Engineering Zhengfei Wei 1 Adam Pockett 2 James D. Mcgettrick 3 Chung Man Fung 4 Owen Guy 0000-0002-6449-4033 5 Matt Carnie 0000-0002-4232-1967 6 Trystan Watson 0000-0002-8015-1436 7 0048393-23012019113545.pdf wei2018v6.pdf 2019-01-23T11:35:45.2100000 Output 401037 application/pdf Accepted Manuscript true 2019-01-23T00:00:00.0000000 true eng |
title |
Temperature-light-dependent JV and TPV analysis of pure sulfide based Cu<inf>2</inf> ZnSnS<inf>4</inf> solar cells |
spellingShingle |
Temperature-light-dependent JV and TPV analysis of pure sulfide based Cu<inf>2</inf> ZnSnS<inf>4</inf> solar cells Zhengfei Wei Adam Pockett Owen Guy Matt Carnie Trystan Watson |
title_short |
Temperature-light-dependent JV and TPV analysis of pure sulfide based Cu<inf>2</inf> ZnSnS<inf>4</inf> solar cells |
title_full |
Temperature-light-dependent JV and TPV analysis of pure sulfide based Cu<inf>2</inf> ZnSnS<inf>4</inf> solar cells |
title_fullStr |
Temperature-light-dependent JV and TPV analysis of pure sulfide based Cu<inf>2</inf> ZnSnS<inf>4</inf> solar cells |
title_full_unstemmed |
Temperature-light-dependent JV and TPV analysis of pure sulfide based Cu<inf>2</inf> ZnSnS<inf>4</inf> solar cells |
title_sort |
Temperature-light-dependent JV and TPV analysis of pure sulfide based Cu<inf>2</inf> ZnSnS<inf>4</inf> solar cells |
author_id_str_mv |
e4ae52ae9b63b7b6da834c460ee3bb2d de06433fccc0514dcf45aa9d1fc5c60f c7fa5949b8528e048c5b978005f66794 73b367694366a646b90bb15db32bb8c0 a210327b52472cfe8df9b8108d661457 |
author_id_fullname_str_mv |
e4ae52ae9b63b7b6da834c460ee3bb2d_***_Zhengfei Wei de06433fccc0514dcf45aa9d1fc5c60f_***_Adam Pockett c7fa5949b8528e048c5b978005f66794_***_Owen Guy 73b367694366a646b90bb15db32bb8c0_***_Matt Carnie a210327b52472cfe8df9b8108d661457_***_Trystan Watson |
author |
Zhengfei Wei Adam Pockett Owen Guy Matt Carnie Trystan Watson |
author2 |
Zhengfei Wei Adam Pockett James D. Mcgettrick Chung Man Fung Owen Guy Matt Carnie Trystan Watson |
format |
Conference Paper/Proceeding/Abstract |
container_title |
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) |
container_start_page |
2767 |
publishDate |
2018 |
institution |
Swansea University |
isbn |
978-1-5386-8530-3 978-1-5386-8529-7 |
issn |
0160-8371 |
doi_str_mv |
10.1109/pvsc.2018.8547605 |
publisher |
IEEE |
college_str |
Faculty of Science and Engineering |
hierarchytype |
|
hierarchy_top_id |
facultyofscienceandengineering |
hierarchy_top_title |
Faculty of Science and Engineering |
hierarchy_parent_id |
facultyofscienceandengineering |
hierarchy_parent_title |
Faculty of Science and Engineering |
department_str |
School of Engineering and Applied Sciences - Materials Science and Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Materials Science and Engineering |
url |
http://dx.doi.org/10.1109/pvsc.2018.8547605 |
document_store_str |
1 |
active_str |
0 |
description |
In this work, we exploit temperature-light-dependent current-density-voltage (T-JV) and transient photovoltage measurements (T-TPV) to investigate charge dynamics, especially at the back contact, in solution-processed Cu 2 ZnSnS 4 solar cells. A Si x N y hole barrier was grown on top of Mo to help to investigate carrier dynamics. By using T-JV techniques, we are able to observe the dominant recombination mechanism occurring at the back contact interface that could lead to significant open-circuit voltage (V oc ) loss. In combination with T-TPV, TPV decay time mapping across temperature in a range of 213-313 K and light intensity range of 0.01-1 suns was used to explore interface related recombination and charge transport for CZTS solar cell devices. |
published_date |
2018-06-01T15:17:15Z |
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1767600748422496256 |
score |
11.021648 |