Journal article 953 views 428 downloads
Germanium substitution endowing Cr 3+ -doped zinc aluminate phosphors with bright and super-long near-infrared persistent luminescence
Yi Zhang,
Rui Huang,
Hongliang Li,
Dejian Hou,
Zhenxu Lin,
Jie Song,
Yuzheng Guo 
,
Huihong Lin,
Chao Song,
Zewen Lin,
John Robertson
,
Huihong Lin,
Chao Song,
Zewen Lin,
John Robertson
Acta Materialia, Volume: 155, Pages: 214 - 221
Swansea University Author:
Yuzheng Guo
-
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DOI (Published version): 10.1016/j.actamat.2018.06.020
Abstract
We present novel near-infrared (NIR) Cr3+-doped non-gallate super-long-persistence phosphors (Zn1+xAl2-2xGexO4:Cr3+) by Germanium substitution in the original ZnAl2O4:Cr3+. Unlike the negligible NIR persistent luminescence of ZnAl2O4:Cr3+ upon UV or visible light excitation, the Ge substituted phosp...
| Published in: | Acta Materialia |
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| ISSN: | 1359-6454 |
| Published: |
2018
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| Online Access: |
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa40732 |
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| Abstract: |
We present novel near-infrared (NIR) Cr3+-doped non-gallate super-long-persistence phosphors (Zn1+xAl2-2xGexO4:Cr3+) by Germanium substitution in the original ZnAl2O4:Cr3+. Unlike the negligible NIR persistent luminescence of ZnAl2O4:Cr3+ upon UV or visible light excitation, the Ge substituted phosphors feature strong and super-long-persistent luminescence at approximately 650–750 nm for more than 120 h. The relation between the Ge substitution and the defect trapping states is investigated systematically. The experimental results combined with the first-principles calculations reveal that GeZn○○radical dot and GeAl○radical dot in the spinel structure would introduce shallow and deep defect states in the band gap to serve as new efficient traps, which are mainly responsible for the strong and super-long-persistent luminescence upon UV or visible light excitation. The present advanced phosphors is an alternative candidate for applications in biomedical imaging and night-vision surveillance. |
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| Keywords: |
Persistent luminescence; Near-infrared; First-principles; Antisite defects; Energy storage |
| College: |
Faculty of Science and Engineering |
| Start Page: |
214 |
| End Page: |
221 |