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Germanium substitution endowing Cr 3+ -doped zinc aluminate phosphors with bright and super-long near-infrared persistent luminescence

Yi Zhang, Rui Huang, Hongliang Li, Dejian Hou, Zhenxu Lin, Jie Song, Yuzheng Guo Orcid Logo, Huihong Lin, Chao Song, Zewen Lin, John Robertson

Acta Materialia, Volume: 155, Pages: 214 - 221

Swansea University Author: Yuzheng Guo Orcid Logo

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DOI (Published version): 10.1016/j.actamat.2018.06.020

Abstract

We present novel near-infrared (NIR) Cr3+-doped non-gallate super-long-persistence phosphors (Zn1+xAl2-2xGexO4:Cr3+) by Germanium substitution in the original ZnAl2O4:Cr3+. Unlike the negligible NIR persistent luminescence of ZnAl2O4:Cr3+ upon UV or visible light excitation, the Ge substituted phosp...

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Published in: Acta Materialia
ISSN: 1359-6454
Published: 2018
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URI: https://cronfa.swan.ac.uk/Record/cronfa40732
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spelling 2018-09-04T15:19:02.1277476 v2 40732 2018-06-18 Germanium substitution endowing Cr 3+ -doped zinc aluminate phosphors with bright and super-long near-infrared persistent luminescence 2c285ab01f88f7ecb25a3aacabee52ea 0000-0003-2656-0340 Yuzheng Guo Yuzheng Guo true false 2018-06-18 GENG We present novel near-infrared (NIR) Cr3+-doped non-gallate super-long-persistence phosphors (Zn1+xAl2-2xGexO4:Cr3+) by Germanium substitution in the original ZnAl2O4:Cr3+. Unlike the negligible NIR persistent luminescence of ZnAl2O4:Cr3+ upon UV or visible light excitation, the Ge substituted phosphors feature strong and super-long-persistent luminescence at approximately 650–750 nm for more than 120 h. The relation between the Ge substitution and the defect trapping states is investigated systematically. The experimental results combined with the first-principles calculations reveal that GeZn○○radical dot and GeAl○radical dot in the spinel structure would introduce shallow and deep defect states in the band gap to serve as new efficient traps, which are mainly responsible for the strong and super-long-persistent luminescence upon UV or visible light excitation. The present advanced phosphors is an alternative candidate for applications in biomedical imaging and night-vision surveillance. Journal Article Acta Materialia 155 214 221 1359-6454 Persistent luminescence; Near-infrared; First-principles; Antisite defects; Energy storage 15 8 2018 2018-08-15 10.1016/j.actamat.2018.06.020 COLLEGE NANME General Engineering COLLEGE CODE GENG Swansea University 2018-09-04T15:19:02.1277476 2018-06-18T11:35:27.2063856 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering Yi Zhang 1 Rui Huang 2 Hongliang Li 3 Dejian Hou 4 Zhenxu Lin 5 Jie Song 6 Yuzheng Guo 0000-0003-2656-0340 7 Huihong Lin 8 Chao Song 9 Zewen Lin 10 John Robertson 11 0040732-18062018145733.pdf zhang2018(4).pdf 2018-06-18T14:57:33.2800000 Output 1328205 application/pdf Accepted Manuscript true 2019-06-14T00:00:00.0000000 true eng
title Germanium substitution endowing Cr 3+ -doped zinc aluminate phosphors with bright and super-long near-infrared persistent luminescence
spellingShingle Germanium substitution endowing Cr 3+ -doped zinc aluminate phosphors with bright and super-long near-infrared persistent luminescence
Yuzheng Guo
title_short Germanium substitution endowing Cr 3+ -doped zinc aluminate phosphors with bright and super-long near-infrared persistent luminescence
title_full Germanium substitution endowing Cr 3+ -doped zinc aluminate phosphors with bright and super-long near-infrared persistent luminescence
title_fullStr Germanium substitution endowing Cr 3+ -doped zinc aluminate phosphors with bright and super-long near-infrared persistent luminescence
title_full_unstemmed Germanium substitution endowing Cr 3+ -doped zinc aluminate phosphors with bright and super-long near-infrared persistent luminescence
title_sort Germanium substitution endowing Cr 3+ -doped zinc aluminate phosphors with bright and super-long near-infrared persistent luminescence
author_id_str_mv 2c285ab01f88f7ecb25a3aacabee52ea
author_id_fullname_str_mv 2c285ab01f88f7ecb25a3aacabee52ea_***_Yuzheng Guo
author Yuzheng Guo
author2 Yi Zhang
Rui Huang
Hongliang Li
Dejian Hou
Zhenxu Lin
Jie Song
Yuzheng Guo
Huihong Lin
Chao Song
Zewen Lin
John Robertson
format Journal article
container_title Acta Materialia
container_volume 155
container_start_page 214
publishDate 2018
institution Swansea University
issn 1359-6454
doi_str_mv 10.1016/j.actamat.2018.06.020
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering
document_store_str 1
active_str 0
description We present novel near-infrared (NIR) Cr3+-doped non-gallate super-long-persistence phosphors (Zn1+xAl2-2xGexO4:Cr3+) by Germanium substitution in the original ZnAl2O4:Cr3+. Unlike the negligible NIR persistent luminescence of ZnAl2O4:Cr3+ upon UV or visible light excitation, the Ge substituted phosphors feature strong and super-long-persistent luminescence at approximately 650–750 nm for more than 120 h. The relation between the Ge substitution and the defect trapping states is investigated systematically. The experimental results combined with the first-principles calculations reveal that GeZn○○radical dot and GeAl○radical dot in the spinel structure would introduce shallow and deep defect states in the band gap to serve as new efficient traps, which are mainly responsible for the strong and super-long-persistent luminescence upon UV or visible light excitation. The present advanced phosphors is an alternative candidate for applications in biomedical imaging and night-vision surveillance.
published_date 2018-08-15T03:51:51Z
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score 11.036706

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