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Investigating the electrical properties of zinc oxide nanostructures. / Ravinder Singh

Swansea University Author: Ravinder Singh

Abstract

Electron transport characterisation is fundamental step forward in exploring the potential of a semiconductor material to be used as building material in electronic devices. Several device parameters such as channel length, gate thickness, extent of doping etc. are determined with the help of precis...

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Published: 2011
Institution: Swansea University
Degree level: Master of Research
URI: https://cronfa.swan.ac.uk/Record/cronfa42375
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spelling 2018-08-16T14:39:02.9105634 v2 42375 2018-08-02 Investigating the electrical properties of zinc oxide nanostructures. 9aa40bc573587c7b330489036909865c NULL Ravinder Singh Ravinder Singh true true 2018-08-02 Electron transport characterisation is fundamental step forward in exploring the potential of a semiconductor material to be used as building material in electronic devices. Several device parameters such as channel length, gate thickness, extent of doping etc. are determined with the help of precise electron transport measurements. Four point probe measurement is considered as one of the reliable electrical characterisation technique especially in case of semiconductor materials. Several key parameters such as resistivity, carrier type, carrier concentration, carrier mobility etc., can be directly calculated to a high degree of accuracy by carefully following simple experimental procedures of four point probe. In this project fundamental electrical characteristic of two different nanostructures (1-D thin films and 2-D nanowires) of ZnO were studied. Resistivity of as grown ZnO thin films is found out to be of the order of 1000 Ocm, post-growth treatment of thin films in the presence of N[2]O environment increases their stability and resistivity is reduced to less than 100 ?cm. This is considered to be due to the N-Zn bonding, as annealing in the presence of O[2] alone resulted in increase in the resistivity. From the measured resistivity of thin films of different thickness it is also established that resistivity of Cu doped ZnO thin films is inversely proportional to the film thickness. An exponential dependence of resistivity on the presence on Cu content in thin film was observed and their resistivity can be easily controlled by varying the percentage of Cu in ZnO thin films. In the case of nanowire devices the resistivity and transconductance measurements were performed using four point probe arrangement to determine the true characteristics of the nanowires. The resistivity of the samples was found out to be in the range of 1.10 x 10[-1] to 5.58 x 10[-2] Ocm. It was observed that with decrease in the width of nanowire beyond 90nm the resistivity decreases because of the decrease in surface vacancies, which result in reduced inelastic scattering events and electron mean free path increases. From the conductance versus gate voltage (Vg) plot, n-type nature of ZnO nanowires is observed. The carrier mobility for the ZnO nanowires was determined to be between 8 and 100 cm[2] /Vs and carrier concentration in the range of 5.66 x 10[17] to 3.77 x 10[19] cm[-3]. E-Thesis Materials science.;Electrical engineering.;Nanotechnology. 31 12 2011 2011-12-31 COLLEGE NANME Engineering COLLEGE CODE Swansea University Master of Research 2018-08-16T14:39:02.9105634 2018-08-02T16:24:29.0101898 Faculty of Science and Engineering School of Engineering and Applied Sciences - Uncategorised Ravinder Singh NULL 1 0042375-02082018162449.pdf 10798083.pdf 2018-08-02T16:24:49.4770000 Output 6725370 application/pdf E-Thesis true 2018-08-02T16:24:49.4770000 false
title Investigating the electrical properties of zinc oxide nanostructures.
spellingShingle Investigating the electrical properties of zinc oxide nanostructures.
Ravinder Singh
title_short Investigating the electrical properties of zinc oxide nanostructures.
title_full Investigating the electrical properties of zinc oxide nanostructures.
title_fullStr Investigating the electrical properties of zinc oxide nanostructures.
title_full_unstemmed Investigating the electrical properties of zinc oxide nanostructures.
title_sort Investigating the electrical properties of zinc oxide nanostructures.
author_id_str_mv 9aa40bc573587c7b330489036909865c
author_id_fullname_str_mv 9aa40bc573587c7b330489036909865c_***_Ravinder Singh
author Ravinder Singh
author2 Ravinder Singh
format E-Thesis
publishDate 2011
institution Swansea University
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Uncategorised{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Uncategorised
document_store_str 1
active_str 0
description Electron transport characterisation is fundamental step forward in exploring the potential of a semiconductor material to be used as building material in electronic devices. Several device parameters such as channel length, gate thickness, extent of doping etc. are determined with the help of precise electron transport measurements. Four point probe measurement is considered as one of the reliable electrical characterisation technique especially in case of semiconductor materials. Several key parameters such as resistivity, carrier type, carrier concentration, carrier mobility etc., can be directly calculated to a high degree of accuracy by carefully following simple experimental procedures of four point probe. In this project fundamental electrical characteristic of two different nanostructures (1-D thin films and 2-D nanowires) of ZnO were studied. Resistivity of as grown ZnO thin films is found out to be of the order of 1000 Ocm, post-growth treatment of thin films in the presence of N[2]O environment increases their stability and resistivity is reduced to less than 100 ?cm. This is considered to be due to the N-Zn bonding, as annealing in the presence of O[2] alone resulted in increase in the resistivity. From the measured resistivity of thin films of different thickness it is also established that resistivity of Cu doped ZnO thin films is inversely proportional to the film thickness. An exponential dependence of resistivity on the presence on Cu content in thin film was observed and their resistivity can be easily controlled by varying the percentage of Cu in ZnO thin films. In the case of nanowire devices the resistivity and transconductance measurements were performed using four point probe arrangement to determine the true characteristics of the nanowires. The resistivity of the samples was found out to be in the range of 1.10 x 10[-1] to 5.58 x 10[-2] Ocm. It was observed that with decrease in the width of nanowire beyond 90nm the resistivity decreases because of the decrease in surface vacancies, which result in reduced inelastic scattering events and electron mean free path increases. From the conductance versus gate voltage (Vg) plot, n-type nature of ZnO nanowires is observed. The carrier mobility for the ZnO nanowires was determined to be between 8 and 100 cm[2] /Vs and carrier concentration in the range of 5.66 x 10[17] to 3.77 x 10[19] cm[-3].
published_date 2011-12-31T03:52:50Z
_version_ 1763752616507998208
score 11.012791

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