Journal article 1186 views 117 downloads
Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs
Steven J. Duffy,
Brahim Benbakhti,
Karol Kalna
,
Mohammed Boucherta,
Wei D. Zhang,
Nour E. Bourzgui,
Ali Soltani
IEEE Access, Volume: 6, Pages: 42721 - 42728
Swansea University Author:
Karol Kalna
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DOI (Published version): 10.1109/ACCESS.2018.2861323
Abstract
Temperature distributions in AlGaN$/$GaN TLM structures and devices are characterized and analysed using Infrascope temperature mapping system. For the first time, a substantial rise of channel temperature at the inner ends of Ohmic contacts has been observed. The X-ray diffraction technique combine...
Published in: | IEEE Access |
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ISSN: | 2169-3536 |
Published: |
2018
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Online Access: |
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URI: | https://cronfa.swan.ac.uk/Record/cronfa44608 |
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Abstract: |
Temperature distributions in AlGaN$/$GaN TLM structures and devices are characterized and analysed using Infrascope temperature mapping system. For the first time, a substantial rise of channel temperature at the inner ends of Ohmic contacts has been observed. The X-ray diffraction technique combined with drift-diffusion simulations show that reduction in a strain at the vicinity of Ohmic contacts increases electric field at these locations resulting in the rise of lattice temperature. The thermal coupling of a high conductive tensile region at the contacts to a low conductive channel region is an origin of the temperature rise observed in both short and long channel structures and devices. |
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College: |
Faculty of Science and Engineering |
Start Page: |
42721 |
End Page: |
42728 |