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Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs / Karol, Kalna

IEEE Access, Volume: 6, Pages: 42721 - 42728

Swansea University Author: Karol, Kalna

Abstract

Temperature distributions in AlGaN$/$GaN TLM structures and devices are characterized and analysed using Infrascope temperature mapping system. For the first time, a substantial rise of channel temperature at the inner ends of Ohmic contacts has been observed. The X-ray diffraction technique combine...

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Published in: IEEE Access
ISSN: 2169-3536
Published: 2018
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa44608
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Abstract: Temperature distributions in AlGaN$/$GaN TLM structures and devices are characterized and analysed using Infrascope temperature mapping system. For the first time, a substantial rise of channel temperature at the inner ends of Ohmic contacts has been observed. The X-ray diffraction technique combined with drift-diffusion simulations show that reduction in a strain at the vicinity of Ohmic contacts increases electric field at these locations resulting in the rise of lattice temperature. The thermal coupling of a high conductive tensile region at the contacts to a low conductive channel region is an origin of the temperature rise observed in both short and long channel structures and devices.
College: College of Engineering
Start Page: 42721
End Page: 42728